IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0481637
(2002-12-13)
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국제출원번호 |
PCT/JP02/013067
(2002-12-13)
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§371/§102 date |
20031222
(20031222)
|
국제공개번호 |
WO04/055361
(2004-07-01)
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발명자
/ 주소 |
- Uruno,Junpei
- Kouno,Yasuhiko
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출원인 / 주소 |
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대리인 / 주소 |
Dickstein Shapiro Morin &
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인용정보 |
피인용 횟수 :
5 인용 특허 :
3 |
초록
▼
An igniter of the present invention has an insulated gate semiconductor device having a collector terminal, an emitter terminal and a gate terminal, a current control circuit which limits current by controlling voltage at the gate terminal when current for flowing through the insulated gate semicond
An igniter of the present invention has an insulated gate semiconductor device having a collector terminal, an emitter terminal and a gate terminal, a current control circuit which limits current by controlling voltage at the gate terminal when current for flowing through the insulated gate semiconductor device exceeds a fixed value, a voltage monitor circuit for detecting a potential of the collector, and a control current adjusting circuit for controlling current which flows through the gate terminal by receiving output from the voltage monitor circuit.
대표청구항
▼
The invention claimed is: 1. An onboard igniter, characterized by including: a pair of main terminals for carrying main current; an insulated gate semiconductor device having a control terminal for controlling said main current; a current detection terminal; a current control circuit for limiting s
The invention claimed is: 1. An onboard igniter, characterized by including: a pair of main terminals for carrying main current; an insulated gate semiconductor device having a control terminal for controlling said main current; a current detection terminal; a current control circuit for limiting said main current by controlling voltage of a control electrode when said main current exceeds a fixed value; a voltage monitor circuit for detecting voltage of said pair of main terminals; and a control current adjusting circuit for controlling current for flowing through said control terminal by receiving output from said voltage monitor circuit; said voltage monitor circuit is a series circuit having at least two resistors connected between said pair of main terminals, and outputs potential at a node of this series circuit. 2. The onboard igniter according to claim 1, characterized in that said control current adjusting circuit comprises: control electrode resistance connected to said control terminal; and a by-pass circuit, to which is connected in parallel with said control electrode resistance, and which flows current when a signal is outputted from said voltage monitor circuit. 3. The onboard igniter according to claim 2, characterized in that said by-pass circuit has a MOSFET in which a drain is connected to one terminal of said control electrode resistance, a source is connected to the other terminal of said control electrode resistance, and a gate is connected to output of said voltage monitor circuit. 4. The onboard igniter according to claim 3, characterized in that a series circuit is connected between the drain of said MOSFET of said by-pass circuit and one terminal of said control electrode resistance. 5. The onboard igniter according to claim 3, characterized in that a diode for limiting potential of said gate constant is connected between said gate of MOSFET and a terminal having lower potential of said pair of main terminals. 6. The onboard igniter according to claim 3, characterized in that a series circuit is connected between the drain of MOSFET of said by-pass circuit and one terminal of said control electrode resistance, and that a gate of said current limiting MOSFET is connected to an output of a constant-voltage regulated power supply. 7. The onboard igniter according to claim 1, characterized in that said insulated gate semiconductor device is an insulated gate bipolar transistor (IGBT). 8. The onboard igniter according to claim 1, characterized in that said voltage monitor circuit is constructed to detect potential from a portion of a Zener diode. 9. An onboard igniter, characterized by including: a pair of main terminals for carrying main current; an insulated gate semiconductor device having a control terminal for controlling said main current; a current control circuit for limiting said main current by controlling voltage of a control electrode when said main current exceeds a fixed value; a voltage monitor circuit for detecting voltage of said pair of main terminals; and a control current adjusting circuit for controlling current for flowing through said control terminal by receiving output from said voltage monitor circuit; said control electrode adjusting circuit has a MOSFET in which a drain is connected to a power circuit, a source is connected to said control electrode, and a gate is connected to output of said voltage monitor circuit. 10. An onboard igniter, characterized by including: a pair of main terminals for carrying main current; an insulated gate semiconductor device having a control terminal for controlling said main current; a current control circuit for limiting said main current by controlling voltage of a control electrode when said main current exceeds a fixed value; a voltage monitor circuit for detecting voltage of said pair of main terminals; and a control current adjusting circuit for controlling current for flowing through said control terminal by receiving output from said voltage monitor circuit; said voltage monitor circuit is a series circuit having at least two resistors connected between a terminal of said pair of main terminals, higher in potential and said control terminal, and outputs potential at a node of this series circuit. 11. An IGBT for an onboard igniter, characterized by being constituted such that: there are provided a semiconductor substrate having a pair of main surfaces, a first layer of one-way conductive type which is adjacent to one main surface of said semiconductor substrate, and a second layer of a second conductive type which has been formed adjacent the other main surface and said first layer of said semiconductor substrate; said semiconductor substrate has a first domain and a second domain which are adjacent to each other; on the other main surfaces of said first domain and said second domain, there are provided first electrodes; on said first domain, within its first layer, there are provided a third layer of the other conductive type to be selectively formed adjacent to one main surface, a fourth layer of one-way conductive type to be selectively formed adjacent to one main surface within the third layer, and a fifth layer of one-way conductive type to be selectively formed apart from the fourth layer of one-way conductive type within the third layer of the other conductive type, adjacent to one main surface within the first layer; on one main surface, there are provided a second electrode which comes into contact with the third layer and the fourth layer, and a first control electrode to be formed, through a dielectric film, on an exposure portion of the third layer on the opposite side to the second electrode on one main surface, on said second domain, within the first layer, there are formed a sixth layer of the other conductive type to be selectively formed adjacent to one main surface, and a first semiconductor layer, through a dielectric film, on one main surface of the sixth layer; there are formed a seventh layer of the other conductive type and an eighth layer to be selectively formed on said first semiconductor layer, and a ninth layer of one-way conductive type to be interposed between the seventh layer of the other conductive type and the eighth layer; there is formed a second semiconductor layer apart from said first semiconductor layer; and there are provided a tenth layer of one-way conductive type to be selectively formed on said second semiconductor layer and an eleventh layer of one-way conductive type to be selectively formed adjacent said first main surface, in the first semiconductor layer on one main surface, there are provided a third electrode for connecting to the first control electrode of the first domain which comes into contact with the seventh layer, a fourth electrode which comes into contact with the eighth layer, a second control electrode to be formed, through a dielectric film, on an exposure portion of the ninth layer, and in the second semiconductor layer on one main surface, on the one hand, a fifth electrode which comes into contact with the tenth layer, on the other hand, a sixth electrode which comes into contact with the tenth layer and connects to the eleventh layer, and a seventh electrode which comes into contact with the tenth layer to be interposed between the fifth electrode and the sixth electrode, and the second electrode of said first domain is connected to the third electrode of said second domain, the first control electrode of said first domain is connected to the eighth electrode of said second domain, and the seventh electrode of said second domain is connected to the second control electrode. 12. An onboard igniter, characterized by including: a pair of main terminals for carrying main current; an insulated gate semiconductor device having a control terminal for controlling said main current; a current control circuit for limiting said main current by controlling voltage of a control electrode when said main current exceeds a fixed value; a voltage monitor circuit for detecting voltage of said pair of main terminals; and a control current adjusting circuit for controlling current for flowing through said control terminal by receiving output from said voltage monitor circuit; said voltage monitor circuit is a series circuit of at least two capacitors connected between said pair of main terminals, and outputs potential at a node of this series circuit.
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