IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
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| 국제특허분류(IPC7판) |
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| 출원번호 |
US-0456592
(2003-06-09)
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발명자
/ 주소 |
- Bawendi,Moungi G.
- Mikulec,Frederic V.
- Kim,Sungjee
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| 출원인 / 주소 |
- Massachusetts Institute of Technology
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| 대리인 / 주소 |
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| 인용정보 |
피인용 횟수 :
52 인용 특허 :
37 |
초록
▼
Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as hi
Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.
대표청구항
▼
What is claimed is: 1. A method of manufacturing nanocrystallites, comprising injecting into a coordinating solvent an M-containing compound, M being selected from the group consisting of Cd, Zn, Mg, and Hg, and a Te-containing compound of the form wherein one of Z, Z', and Z" comprises an amid
What is claimed is: 1. A method of manufacturing nanocrystallites, comprising injecting into a coordinating solvent an M-containing compound, M being selected from the group consisting of Cd, Zn, Mg, and Hg, and a Te-containing compound of the form wherein one of Z, Z', and Z" comprises an amide, to form a mixture; and heating the mixture to grow the nanocrystallites. 2. The method according to claim 1, wherein the Te-containing compound has a boiling point of at least 200째 C. at atmospheric pressure. 3. The method according to claim 1, wherein each of Z, Z', and Z" is an amide. 4. The method according to claim 1, wherein each of Z, Z', and Z", independently, is--N(A)(A'), wherein each of A and A', independently, is alkyl, alkenyl, aryl, cycloalkyl, or cycloalkenyl. 5. The method according to claim 1, wherein each amide, independently, is a dialkyl amide. 6. The method according to claim 1, further comprising mixing the Te-containing compound and the M-containing compound prior to injecting. 7. The method according to claim 1, further comprising adding additional M-containing compound, additional Te-containing compound, or a mixture thereof, during heating. 8. The method according to claim 1, wherein the Te-containing compound and the M-containing compound are injected sequentially. 9. The method according to claim 1, wherein the Te-containing compound and the M-containing compound are injected substantially simultaneously. 10. The method according to claim 1, further comprising growing an overcoating of a semiconductor on a surface of the nanocrystallite. 11. The method according to claim 1, further comprising separating a size of nanocrystallite by size selective precipitation. 12. The method according to claim 11, wherein an amine is added to the nanocrystallites during size selective precipitation. 13. The method according to claim 1, wherein the nanocrystallite photoluminesces with a full-width at half maximum (FWHM) of 70 nm or less. 14. The method according to claim 1, wherein the FWHM is 45 nm or less.
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