초록 ▼

Various techniques are described which utilize multiple poly-silicon layers in the design and fabrication of various logic elements that are used in semiconductor devices. According to a specific implementation of the present invention, logic gate cell sizes and memory array cell sizes may be reduce

Various techniques are described which utilize multiple poly-silicon layers in the design and fabrication of various logic elements that are used in semiconductor devices. According to a specific implementation of the present invention, logic gate cell sizes and memory array cell sizes may be reduced by fabricating various transistor gates using multiple poly-silicon layers. The techniques of the present invention of using multiple layers of poly-silicon to form transistor gates of logic elements provides extra degrees of freedom in fine tuning transistor parameters such as, for example, oxide thickness, threshold voltage, maximum allowed gate voltage, etc.

대표청구항 ▼

It is claimed: 1. A method of forming a logic element of an integrated circuit, the logic element including a circuit portion configured or designed opexfonn at least one logic operation, the integrated circuit being fabricated on a substrate, the method comprising: forming a first gate over the su

It is claimed: 1. A method of forming a logic element of an integrated circuit, the logic element including a circuit portion configured or designed opexfonn at least one logic operation, the integrated circuit being fabricated on a substrate, the method comprising: forming a first gate over the substrate, the first gate being comprised La first transistor gate layer; forming a second gate over the substrate, the second gate being comprised of a second transistor gate layer; wherein a portion of the second gate is formed ova a first portion of the first gate, thereby forming a first overlapping gate region; forming a first electrical contact region on the first gate; forming a second electrical contact region on the second gate; wherein the first gate corresponds to a completed first transistor gate and wherein the second gate correspond to a completed second transistor gate of the circuit portion forming a first doped region in the substrate which functions as a source region of the circuit portion; forming a second doped region in the substrate which functions as a region of the circuit portion; forming an active region in the substrate between said source and regions, said active region being designed to enable current flow between said source and drain regions; wherein the first transistor gate includes an active region portion and a contact region portion, the active region portion corresponding to that portion of the first transistor gate which is over the active region: wherein the forming of the completed second transistor gate include removing portions of the second transistor gate layer in a manner which results in formation of the completed second transistor gate such that at least the portion of the completed second transistor gate is formed over the entirety of the active region portion of the first transistor gate; and forming the logic element in a manner which enables the logic element to perform at least one logic operation. 2. The method of claim 1 further comprising: forming the first transistor gate layer over the substrate; and thereafter forming the second transistor gate layer over the substrate. 3. The method of claim 1 wherein the gate is formed having a first thickness, and wherein the second gate is formed having a second thickness; and wherein the first thickness is different than the second thickness. 4. The method of claim 1 further comprising: forming a first dielectric layer over said substrate; thereafter forming the first transistor gate layer over the substrate; thereafter forming a second dielectric layer over said substrate; and thereafter forming the second transistor gate layer over the substrate. 5. The method of claim 1 wherein the first gate layer and the second gate layer each include poly-silicon material. 6. The method of claim 4 wherein the first and second dielectric layers each include silicon dioxide. 7. The method of claim 4 wherein the dielectric layer is formed having a first thickness, and wherein the second dielectric layer is formed having a second thickness; and wherein the first thickness is different than the second thickness. 8. The method of claim 1 further comprising: forming a dielectric layer between the first gate and the second gate, the dielectric layer having a first thickness; wherein a spacing between said second portion of the second gate and aid first portion of the first gate is substantially equal to the first thickness of the dielectric layer. 9. The method of claim 1 wherein the circuit portion is designed to exhibit performance characteristics substantially similar to performance characteristics of two serially connected transistors including a first transistor and a second transistor; wherein the first transistor has associated therewith a first threshold voltage value; and wherein the second transistor has associated therewith a second threshold voltage value which is different than the first threshold voltage value. 10. The method of claim 1 wherein said circuit portion is devoid of third doped region having doping characteristics substantially similar to doping characteristics of the first doped region. 11. The method of claim 1 wherein said circuit portion is devoid of a floating gate. 12. The method of claim 1 wherein a substantial portion of the first overlapping gate region occurs over the active region; and wherein a width of the overlapping gate portion is at least equal to or greater than a width of the active region. 13. The method of claim 12 wherein the first portion of the first gate is formed over the active region; and wherein at least a portion of the second gate is formed over only a portion of the first portion of the first gate. 14. The method of claim 1 wherein a substantial portion of the first overlapping gate region occurs over the active region; wherein the first portion of the first gate is formed over the active region; and wherein at least a portion of the second gate is formed over the entirely of the first portion of the first gate. 15. The method of claim 1 wherein the first portion of the first gate is interposed between the second portion of the second gate region and active region of the circuit portion. 16. The method of claim 1 wherein the logic element corresponds to an element selected from a group of: NAND gates, AND gates, NOR gates, OR gates, XOR gates, and latches. 17. The method of claim 1 wherein said logic element is devoid of a floating gate. 18. The method of claim 17 wherein the logic element corresponds to an element selected from a group of: NAND gates, AND gates, NOR gates, OR gates, XOR gates, and latches. 19. The method of claim 1 further comprising forming the second dielectric layer between the first gate and the second gate. 20. The method of claim 1 wherein the first transistor gate has associated therewith a first threshold voltage value; and wherein the second transistor gate has associated therewith a second threshold voltage value which is different than the first threshold voltage value. 21. The method of claim 20 wherein the first gate is formed to not function as a floating gate; and wherein the second gate is formed to not function as a floating gate. 22. The method of claim 1 further comprising forming the logic element in a manner which does not enable the logic element to perform a memory storage operation. 23. A method of forming a logic element of an integrated circuit, the integrated circuit being fabricated on a substrate, the integrated circuit including a circuit portion, the method comprising forming a first gate over the substrate, the first gate being comprised of a first transistor gate layer; forming a first dielectric layer between the first gate and the substrate such that the first gate is conductively isolated from the substrate; forming a second gate over the substrate, the second gate being comprised of a second transistor gate layer; forming a second dielectric layer between the second gate and the substrate such that the second gate is conductively isolated from the substrate; wherein a portion of the second gate is formed over a first portion of the first gate, thereby forming a first overlapping gate region; forming a first electrical contact region on the first gate; forming a second electrical contact region on the second gate; wherein the first gate corresponds to a first finalized transistor gate and wherein the second gate correspond to a second finalized transistor gate of the circuit portion; wherein the logic element corresponds to a transistor cell which includes the first finalized transistor gate and second finalized transistor gate; forming an active region in the substrate, said active region being designed to enable current flow between source and drain regions of the transistor cell; wherein the first finalized transistor gate includes an active region portion and a contact region portion, the active region portion corresponding to that portion of the first transistor gate which is over the active region; and removing portions of the second transistor gate layer to thereby form the second finalized transistor gate such that at least the portion of the second finalized transistor gate is formed over the entirety of the active region portion of the first finalized transistor gate. 24. The method of claim 23 further comprising forming the logic element in a manner which enables the logic element to perform at least one logic operation. 25. The method of claim 23 wherein the logic element includes a circuit portion which is designed to exhibit performance characteristics substantially similar to performance characteristics of two serially connected transistors. 26. The method of claim 25 wherein method further comprises: forming a first doped region in the substrate which functions as a source region of the circuit portion; forming a second doped region in the substrate which functions as a drain region of the circuit portion; and forming an active region in the substrate between said source and drain regions, said active region being designed to enable current flow between said source and drain regions. 27. The method of claim 26 wherein said circuit portion is devoid of third doped region having doping characteristics substantially similar to doping characteristics of the first doped region. 28. The method of claim 25 wherein said circuit portion is devoid of a floating gate. 29. The method of claim 26 wherein a substantial portion of the first overlapping gate region occurs over the active region; and wherein a width of the overlapping gate portion is at least equal to or greater than a width of the active region. 30. The method of claim 29 wherein the first portion of the first gate is formed over the active region; and wherein at least a portion of the second gate is formed over only a portion of the first portion of the first gate. 31. The method of claim 26 wherein a substantial portion of the first overlapping gate region occurs over the active region; wherein the first portion of the first gate is formed over the active region; and wherein at least a portion of the second gate is formed over the entirety of the first portion of the first gate. 32. The method of claim 26 wherein the portion of the first gate is interposed between the second portion of the second gate region and active region of the circuit portion. 33. The method of claim 23 wherein the logic element corresponds to an element selected from a group of: NAND gates, AND gates, NOR gates, OR gates, XOR gates, SRAM cells, and latches. 34. The method of claim 23 further comprising forming the second dielectric layer between the first gate and the second gate. 35. The method of claim 23 wherein the first gate is formed in a manner to function as a first transistor gate; wherein the second gate is formed in a manner to function as a second transistor gate; wherein the first transistor has associated therewith a first threshold voltage value; and wherein to second transistor has associated therewith a second threshold voltage value which is different than the first threshold voltage value. 36. The method of claim 35 wherein the gate is formed to not function as a floating gate; and wherein the first gate is formed to not function as a floating gate. 37. The method of claim 23 further comprising forming the logic element in a manner which does not enable the logic element to perform memory storage operation. 38. The method of claim 23 wherein the first dielectric layer is formed having a first thickness, and wherein the second dielectric layer is formed having a second thickness; and wherein the first thickness is different than the second thickness. 39. The method of claim 23 wherein the first gate is formed having a first thickness, and wherein the second gate is formed having a second thickness; and wherein the first thickness is different than the second thickness.