Semiconductor cooling system and process for manufacturing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-023/10
H01L-023/02
H01L-023/34
출원번호
US-0917312
(2004-08-13)
발명자
/ 주소
Adar,Eliezer
Gotlib,Vladimir
출원인 / 주소
DTNR Ltd.
대리인 / 주소
Oblon, Spivak, McClelland, Maier &
인용정보
피인용 횟수 :
0인용 특허 :
5
초록▼
A cooling device for an element such as a microprocessor in a computer, and a process for manufacturing the cooling device. The cooling device provides an effective structure of cooling a microprocessor by providing a metallic filler layer and a metal plate layer spreading out heat generated from th
A cooling device for an element such as a microprocessor in a computer, and a process for manufacturing the cooling device. The cooling device provides an effective structure of cooling a microprocessor by providing a metallic filler layer and a metal plate layer spreading out heat generated from the microprocessor, and thereby effectively thermally conducting heat away from the microprocessor. Further, a semiconductor thermoelectric module can be utilized to further cool the microprocessor.
대표청구항▼
The invention claimed is: 1. A cooling device comprising: an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; a first metal
The invention claimed is: 1. A cooling device comprising: an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; a first metal plate covering and in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; a second metallic filler layer in thermal conductive contact with said first metal plate; and a semiconductor thermoelectric module in thermal conductive contact with said second metallic filler layer. 2. A cooling device according to claim 1, further comprising: a third metallic filler layer in thermal conductive contact with said semiconductor thermoelectric module; and a second metal plate in thermal conductive contact with said third metallic filler layer. 3. A cooling device according to claim 2, wherein said second and third metallic filler layers cover entire surfaces of said semiconductor thermoelectric module. 4. A cooling device according to claim 1, wherein said element to be cooled is an integrated circuit chip. 5. A cooling device according to claim 2, wherein said element to be cooled is an integrated circuit chip. 6. A cooling device comprising: an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; a first metal plate covering and in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of: Sn 21.1%, Bi 50%, Pb 20.5%, and Cd 8.4%. 7. A cooling device according to claim 2, wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of: Sn 21.1%, Bi 50%, Pb 20.5%, and Cd 8.4%. 8. A cooling device comprising: an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; a first metal plate covering and in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of: Sn 12.5%, Bi 50%, Pb 25%, and Cd 12.5%. 9. A cooling device according to claim 2, wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of: Sn 12.5%, Bi 50%, Pb 25%, and Cd 12.5%. 10. A cooling device comprising: an element to be cooled and including a surface outputting heat; a first metallic filler layer configured to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; a first metal plate covering and in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of: Sn 12.9%, Bi 49.4%, Pb 27.7%, and Cd 10%. 11. A cooling device according to claim 2, wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of: Sn 12.9%, Bi 49.4%, Pb 27.7%, and Cd 10%. 12. A cooling device according to claim 1, wherein said first metal plate is formed of at least one of aluminum or copper. 13. A cooling device according to claim 2, wherein at least one of said first and second metal plates is formed of at least one of aluminum or copper. 14. A cooling device according to claim 2, wherein said semiconductor thermoelectric module is a Peltier element. 15. A cooling device according to claim 6, wherein said element to be cooled is an integrated circuit chip. 16. A cooling device according to claim 7, wherein said element to be cooled is an integrated circuit chip. 17. A cooling device according to claim 8, wherein said element to be cooled is an integrated circuit chip. 18. A cooling device according to claim 9, wherein said element to be cooled is an integrated circuit chip. 19. A cooling device according to claim 10, wherein said element to be cooled is an integrated circuit chip. 20. A cooling device according to claim 11, wherein said element to be cooled is an integrated circuit chip. 21. A process for manufacturing a cooling device comprising: providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; providing a first metal plate to cover and to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; providing a second metallic filler layer in thermal conductive contact with said first metal plate; and providing a semiconductor thermoelectric module in thermal conductive contact with said second metallic filler layer. 22. A process for manufacturing a cooling device according to claim 21, further comprising: providing a third metallic filler layer in thermal conductive contact with said semiconductor thermoelectric module; and providing a second metal plate in thermal conductive contact with said third metallic filler layer. 23. A process for manufacturing a cooling device according to claim 22, wherein said second and third metallic filler layers cover entire surfaces of said semiconductor thermoelectric module. 24. A process for manufacturing a cooling device according to claim 21, wherein said element to be cooled is an integrated circuit chip. 25. A process for manufacturing a cooling device according to claim 22, wherein said element to be cooled is an integrated circuit chip. 26. A process for manufacturing a cooling device comprising: providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; providing a first metal plate to cover and to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of Sn 21.1%, Bi 50%, Pb 20.5%, and Cd 8.4%. 27. A process for manufacturing a cooling device according to claim 22, wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of Sn 21.1%, Bi 50%, Pb 20.5%, and Cd 8.4%. 28. A process for manufacturing a cooling device comprising: providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; providing a first metal plate to cover and to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of Sn 12.5%, Bi 50%, Pb 25%, and Cd 12.5%. 29. A process for manufacturing a cooling device according to claim 22, wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of Sn 12.5%, Bi 50%, Pb 25%, and Cd 12.5%. 30. A process for manufacturing a cooling device comprising: providing an element to be cooled and including a surface outputting heat; providing a first metallic filler layer to cover and to be in thermal conductive contact with an entire portion of said surface of said element outputting heat; providing a first metal plate to cover and to be in thermal conductive contact with a surface of said first metallic filler layer, the first metal plate having a greater area than an area of said first metallic filler layer; wherein said first metallic filler layer is formed of an alloy of Sn 12.9%, Bi 49.4%, Pb 27.7%, and Cd 10%. 31. A process for manufacturing a cooling device according to claim 22, wherein at least one of said first, second, and third metallic filler layers is formed of an alloy of Sn 12.9%, Bi 49.4%, Pb 27.7%, and Cd 10%. 32. A process for manufacturing a cooling device according to claim 21, wherein said first metal plate is formed of at least one of aluminum or copper. 33. A process for manufacturing a cooling device according to claim 22, wherein at least one of said first and second metal plates is formed of at least one of aluminum or copper. 34. A process for manufacturing a cooling device according to claim 22, wherein said semiconductor thermoelectric module is a peltier element. 35. A process for manufacturing a cooling device according to claim 26, wherein said element to be cooled is an integrated circuit chip. 36. A process for manufacturing a cooling device according to claim 27, wherein said element to be cooled is an integrated circuit chip. 37. A process for manufacturing a cooling device according to claim 28, wherein said element to be cooled is an integrated circuit chip. 38. A process for manufacturing a cooling device according to claim 29, wherein said element to be cooled is an integrated circuit chip. 39. A process for manufacturing a cooling device according to claim 30, wherein said element to be cooled is an integrated circuit chip. 40. A process for manufacturing a cooling device according to claim 31, wherein said element to be cooled is an integrated circuit chip.
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이 특허에 인용된 특허 (5)
O'Connor, Michael; Haley, Kevin J.; Sur, Biswajit, Diamond heat spreading and cooling technique for integrated circuits.
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