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There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing suf

There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping.

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What is claimed is: 1. A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; and ion-doping an impurity eleme

What is claimed is: 1. A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; and ion-doping an impurity element into a channel region of the semiconductor film, wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film, wherein a concentration of carbon is at 3횞1017 atoms/cm3 or less in said semiconductor film after the step, wherein no mass separation is performed in the ion-doping step, and wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%. 2. A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; ion-doping an impurity element into a channel region of the semiconductor film, wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film, wherein a concentration of nitrogen is at 1횞1017 atoms/cm3 or less in said semiconductor film after the step, wherein no mass separation is performed in the ion-doping step, and wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%. 3. A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; and ion-doping an impurity element into a channel region of the semiconductor film, wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film, wherein a concentration of oxygen is at 3횞1017 atoms/cm3 or less in said semiconductor film after the step, wherein no mass separation is performed in the ion-doping step, and wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%. 4. A method of manufacturing a semiconductor device according to claim 1, wherein said semiconductor film is used as at least a channel forming region of a TFT. 5. A method of manufacturing a semiconductor device according to claim 1, wherein said impurity element imparting p-type conductivity comprises a gas containing diborane, BF2, or boron. 6. A method of manufacturing a semiconductor device according to claim 1, wherein said impurity element imparting n-type conductivity comprises either one of a gas containing P or As, and phosphine. 7. A method for fabricating a semiconductor device according to claim 1, wherein the impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5% to 5%. 8. A method of manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5% to 1%. 9. A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, an electronic amusement apparatus, and a projector. 10. A method according to claim 1, wherein the concentration of hydrogen to be ion-doped simultaneously with said impurity element in said semiconductor film is set to be at 1횞1019 atoms/cm3 or less. 11. A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; ion-doping an impurity element into a channel region of the semiconductor film, wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film, wherein a concentration of hydrogen is at 1횞1019 atoms/cm3 or less in said semiconductor film after the step, wherein no mass separation is performed in the ion-doping step, and wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%. 12. A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; ion-doping an impurity element into a channel region of the semiconductor film through the insulating film, wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film, wherein said impurity element is doped into said semiconductor film by using a source material gas containing said impurity element diluted with hydrogen to the concentration in the range from 0.5% to 5%, and wherein no mass separation is performed in the ion-doping step. 13. A method of manufacturing a semiconductor device according to claim 2, wherein said semiconductor film is used as at least a channel forming region of TFT. 14. A method of manufacturing a semiconductor device according to claim 3, wherein said semiconductor film is used as at least a channel forming region of TFT. 15. A method of manufacturing a semiconductor device according to claim 11, wherein said semiconductor film is used as at least a channel forming region of TFT. 16. A method of manufacturing a semiconductor device according to claim 12, wherein said semiconductor film is used as at least a channel forming region of TFT. 17. A method of manufacturing a semiconductor device according to claim 2, wherein said impurity element imparting p-type conductivity comprises a gas containing diborane, BF2, or boron. 18. A method of manufacturing a semiconductor device according to claim 3, wherein said impurity element imparting p-type conductivity comprises a gas containing diborane, BF2, or boron. 19. A method of manufacturing a semiconductor device according to claim 11, wherein said impurity element imparting p-type conductivity comprises a gas containing diborane, BF2, or boron. 20. A method of manufacturing a semiconductor device according to claim 12, wherein said impurity element imparting p-type conductivity comprises a gas containing diborane, BF2, or boron. 21. A method of manufacturing a semiconductor device according to claim 2, wherein said impurity element imparting n-type conductivity comprises either one of a gas containing P or As, and phosphine. 22. A method of manufacturing a semiconductor device according to claim 3, wherein said impurity element imparting n-type conductivity comprises either one of a gas containing P or As, and phosphine. 23. A method of manufacturing a semiconductor device according to claim 11, wherein said impurity element imparting n-type conductivity comprises either one of a gas containing P or As, and phosphine. 24. A method of manufacturing a semiconductor device according to claim 12, wherein said impurity element imparting n-type conductivity comprises either one of a gas containing P or As, and phosphine. 25. A method for fabricating a semiconductor device according to claim 2, wherein the impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 5%. 26. A method for fabricating a semiconductor device according to claim 3, wherein the impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 5%. 27. A method for fabricating a semiconductor device according to claim 11, wherein the impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 5%. 28. A method of manufacturing a semiconductor device according to claim 2, wherein said impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 1%. 29. A method of manufacturing a semiconductor device according to claim 3, wherein said impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 1%. 30. A method of manufacturing a semiconductor device according to claim 11, wherein said impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 1%. 31. A method of manufacturing a semiconductor device according to claim 2, wherein the semiconductor device is one selected form the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, an electronic amusement apparatus, and a projector. 32. A method of manufacturing a semiconductor device according to claim 3, wherein the semiconductor device is one selected form the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, an electronic amusement apparatus, and a projector. 33. A method of manufacturing a semiconductor device according to claim 11, wherein the semiconductor device is one selected form the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, an electronic amusement apparatus, and a projector. 34. A method of manufacturing a semiconductor device according to claim 12, wherein the semiconductor device is one selected form the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, an electronic amusement apparatus, and a projector. 35. A method according to claim 2, wherein the concentration of hydrogen to be ion-doped simultaneously with said impurity element in said semiconductor film is set to be at 1횞1019 atoms/cm3 or less. 36. A method according to claim 3, wherein the concentration of hydrogen to be ion-doped simultaneously with said impurity element in said semiconductor film is set to be at 1횞1019 atoms/cm3 or less. 37. A method according to claim 12, wherein the concentration of hydrogen to be ion-doped simultaneously with said impurity element in said semiconductor film is set to be at 1횞1019 atoms/cm3 or less. 38. A method according to claim 1, wherein said ion-doping is performed through the insulating film. 39. A method according to claim 2, wherein said ion-doping is performed through the insulating film. 40. A method according to claim 3, wherein said ion-doping is performed through the insulating film. 41. A method according to claim 11, wherein said ion-doping is performed through the insulating film. 42. A method according to claim 12, wherein said ion-doping is performed through the insulating film.