Method of decreasing the k value in sioc layer deposited by chemical vapor deposition
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/4763
H01L-021/02
출원번호
US-0789209
(2004-02-27)
발명자
/ 주소
Gaillard,Frederic
Xia,Li Qun
Lim,Tian Hoe
Yieh,Ellie
Yau,Wai Fan
Jeng,Shin Puu
Liu,Kuowei
Lu,Yung Cheng
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Moser, Patterson &
인용정보
피인용 횟수 :
1인용 특허 :
99
초록▼
A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depo
A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
대표청구항▼
What is claimed is: 1. A method for processing a substrate, comprising: reacting an organosilicon compound with carbon dioxide and one or more oxidizing gases selected from the group consisting of oxygen, ozone, nitrous oxide, carbon monoxide, and water to deposit a dielectric layer comprising sili
What is claimed is: 1. A method for processing a substrate, comprising: reacting an organosilicon compound with carbon dioxide and one or more oxidizing gases selected from the group consisting of oxygen, ozone, nitrous oxide, carbon monoxide, and water to deposit a dielectric layer comprising silicon, carbon, and oxygen on the substrate; and depositing a layer comprising silicon and carbon on the dielectric layer. 2. The method of claim 1, wherein the one or more oxidizing gases is oxygen. 3. The method of claim 1, wherein the dielectric layer is deposited using RF power. 4. The method of claim 1, wherein the organosilicon compound is selected from the group consisting of dimethylsilanediol, diphenylsilanediol, dimethyldimethoxysilane, diethyldiethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, 1,3-dimethyldisiloxane, 1, 1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, 1, 3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 1,3,5-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran. 5. The method of claim 1, wherein the organosilicon compound is selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, dimethylsilanediol, ethylsilane, phenylsilane, diphenylsilane, diphenylsilanediol, methylphenylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, 1,3,5-trisilano-2,4,6-trimethylene, dimethyldimethoxysilane, diethyldiethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, 1,3-dimethyldisiloxane, 1, 1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, 1, 3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 1,3,5-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran. 6. The method of claim 1, wherein the organosilicon compound is octamethylcyclotetrasiloxane. 7. The method of claim 1, wherein the layer comprising silicon and carbon is deposited in the presence of RF power. 8. The method of claim 1, wherein the layer comprising silicon and carbon is an oxygen doped silicon carbide layer. 9. The method of claim 1, wherein the dielectric layer comprises carbon-silicon bonds and has a dielectric constant less than about 3. 10. A method for processing a substrate, comprising: reacting an alkylsilane having one methyl group bonded to silicon with carbon dioxide and one or more oxidizing gases selected from the group consisting of oxygen, ozone, nitrous oxide, carbon monoxide, and water to deposit a dielectric layer comprising silicon, carbon, and oxygen on the substrate; and depositing a layer comprising silicon and carbon on the dielectric layer. 11. The method of claim 10, wherein the alkylsilane is methylsilane or methylphenylsilane. 12. The method of claim 10, wherein the one or more oxidizing gases is oxygen. 13. The method of claim 10, wherein the dielectric layer is deposited using RF power. 14. The method of claim 10, wherein the organosilicon compound is selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, dimethylsilanediol, ethylsilane, phenylsilane, diphenylsilane, diphenylsilanediol, methylphenylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, 1,3,5-trisilano-2,4,6-trimethylene, dimethyldimethoxysilane, diethyldiethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, 1, 3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, 1, 3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 1,3,5-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran. 15. The method of claim 10, wherein the layer comprising silicon and carbon is an oxygen doped silicon carbide layer. 16. A method for processing a substrate in a chemical vapor deposition chamber, comprising: introducing an organosilicon compound into the chamber; introducing an oxidizing gas comprising carbon dioxide and one or more oxidizing gases selected from the group consisting of oxygen, ozone, nitrous oxide, carbon monoxide, and water into the chamber; depositing a dielectric layer on the substrate using a chemical vapor deposition process at a substrate temperature between about 170째 C. and about 180째 C., wherein the dielectric layer comprises silicon, oxygen, and carbon; and depositing a layer comprising silicon and carbon on the dielectric layer. 17. The method of claim 16, wherein the one or more oxidizing gases is oxygen. 18. The method of claim 16, wherein the dielectric layer is deposited using RF power. 19. The method of claim 16, wherein the organosilicon compound is selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, dimethylsilanediol, ethylsilane, phenylsilane, diphenylsilane, diphenylsilanediol, methylphenylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, 1,3,5-trisilano-2,4,6-trimethylene, dimethyldimethoxysilane, diethyldiethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, 1, 3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, 1, 3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 1,3,5-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran. 20. The method of claim 16, wherein the layer comprising silicon and carbon is an oxygen doped silicon carbide layer.
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