Techniques for performing wafer-level burn-in and test of semiconductor devices include a test substrate having active electronic components such as ASICs mounted to an interconnection substrate or incorporated therein, metallic spring contact elements effecting interconnections between the ASICs an
Techniques for performing wafer-level burn-in and test of semiconductor devices include a test substrate having active electronic components such as ASICs mounted to an interconnection substrate or incorporated therein, metallic spring contact elements effecting interconnections between the ASICs and a plurality of devices-under-test (DUTs) on a wafer-under-test (WUT), all disposed in a vacuum vessel so that the ASICs can be operated at temperatures independent from and significantly lower than the burn-in temperature of the DUTs. The spring contact elements may be mounted to either the DUTs or to the ASICs, and may fan out to relax tolerance constraints on aligning and interconnecting the ASICs and the DUTs. Physical alignment techniques are also described.
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What is claimed is: 1. A method for exercising an electronic device, said method comprising: bringing a test substrate into contact with said electronic device, said test substrate comprising active electronics; receiving at said test substrate exercise data from a controller; processing said recei
What is claimed is: 1. A method for exercising an electronic device, said method comprising: bringing a test substrate into contact with said electronic device, said test substrate comprising active electronics; receiving at said test substrate exercise data from a controller; processing said received exercise data with said active electronics and thereby converting at least a portion of said exercise data from a first format to a second format; and exercising said electronic device in accordance with said processed exercise data. 2. The method of claim 1, wherein said exercise data comprises test commands, and said processing comprises converting said test commands into test vectors. 3. The method of claim 1, wherein: said substrate comprises a semiconductor material, and said active electronics are formed as a circuit integrated into said semiconductor material of said substrate. 4. The method of claim 1, wherein in said first format, said exercise data is received into said active electronics via a first number of data inputs, and in said second format, said exercise data is output from said active electronics via a second number of data outputs, wherein said second number is greater than said first number. 5. The method of claim 1, wherein said first format comprises a serial data format and said second format comprises a parallel data format. 6. The method of claim 1, wherein: said processing step comprises receiving said exercise data in said first format as input into said active electronics, and said exercising step comprises outputting said exercise data in said second format from said active electronics into said electronic device. 7. A method for exercising an electronic device, said method comprising: bringing a test substrate into contact with said electronic device, said test substrate including active electronics; receiving at said test substrate exercise data from a controller; processing said received exercise data with said active electronics; testing said electronic device in accordance with said processed exercise data; and analyzing with said active electronics results of said testing. 8. The method of claim 7 further comprising stopping said testing if said electronic device fails a portion of said testing. 9. A method for exercising an electronic device, said method comprising: bringing a test substrate into contact with said electronic device, said test substrate including active electronics; receiving at said test substrata exercise data from a controller; processing said received exercise data with said active electronics; exercising said electronic device in accordance with said processed exercise data; and burning in said electronic device while exercising said electronic device. 10. The method of claim 9, wherein said burning in said electronic device comprises heating said electronic device. 11. The method of claim 10 further comprising keeping said active electronics at a temperature that is less than a temperature of said electronic device during said burning in. 12. A method for exercising a semiconductor die, said method comprising: bringing a test substrate into contact with said semiconductor die, said test substrate including active electronics; receiving at said test substrate exercise data from a controller; processing said received exercise data with said active electronics; and exercising said semiconductor die in accordance with said processed exercise data. 13. The method of claim 12, wherein said semiconductor die is one of a plurality of dice of an unsingulated semiconductor wafer. 14. An apparatus comprising: a substrate; and active electronics disposed on said substrate and configured to process exercise data received from a controller and output said processed exercise data for exercising an electronic device, wherein said active electronics processes said exercise data by converting at least a portion of said exercise data from a first format to a second format. 15. The apparatus claim 14, wherein said exercise data comprises test commands, and said active electronics converts said test commands into test vectors. 16. The apparatus of claim 14, wherein: said substrate comprises a semiconductor material, and said active electronics are fanned as a circuit integrated into said semiconductor material of said substrate. 17. The apparatus of claim 14, wherein in said first format, said exercise data is received into said active electronics via a first number of data inputs, and in said second format, said exercise data is output from said active electronics via a second number of data outputs, wherein said second number is greater than said first number. 18. The apparatus of claim 14, wherein said first format comprises a serial data format and said second format comprises a parallel data format. 19. The apparatus of claim 14, wherein said active electronics is configured to receive as input said exercise data in said first format and output said exercise data in sad second format to said electronic device. 20. An apparatus comprising: a substrate; and active electronics disposed on said substrate, said active electronics configured to: process exercise data received from a controller and output said processed exercise data for exercising an electronic device, and analyze results of testing of said electronic device. 21. The apparatus of claim 20, wherein said active electronics is further configured to stop testing of said electronic device if said electronic device fails a portion of said testing. 22. An apparatus comprising: interconnection means for providing an interface between a controller and an electronic device; data processing means for processing exercise, late received from said controller and outputting said processed exercise data for exercising said electronic device, said data processing means disposed on said interconnection means; and analyzing means for analyzing results of testing of said electronic device, said analyzing means disposed on said interconnection means. 23. The apparatus of claim 22 further comprising stopping means for stopping testing of said electronic device if said electronic device fails a portion of said testing. 24. An apparatus comprising: a semiconductor wafer conspiring a first interface to a controller and a second interface to an electronic device; and active electronics formed as a circuit integrated into said semiconductor wafer, said active electronics configured to process exercise data received from said controller through said first interface and output said processed exercise data through said second interface to said electronic device.
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