초록 ▼

The present invention provides a method and apparatus for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing th

The present invention provides a method and apparatus for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cross-section of a wafer or device, applying a tape having optical energy-markable properties over a surface or edge of the wafer or device, and exposing the tape to an optical energy source to create an identifiable mark. A method for manufacturing an integrated circuit chip and for identifying a known good die are also disclosed. The apparatus of the present invention comprises a multilevel laser-markable tape for application to a bare semiconductor die. In the apparatus, an adhesive layer of the tape provides a homogenous surface for marking subsequent to exposure to electromagnetic radiation.

대표청구항 ▼

What is claimed is: 1. A method of marking a packaged semiconductor device comprising: providing a semiconductor die having a reduced cross-section in wafer form; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a

What is claimed is: 1. A method of marking a packaged semiconductor device comprising: providing a semiconductor die having a reduced cross-section in wafer form; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 2. The method of claim 1, wherein the packaged semiconductor device comprises at least one integrated circuit semiconductor die. 3. The method of claim 1, wherein applying the tape to the at least a portion of the surface of the packaged semiconductor device includes applying the tape to an edge portion of the packaged semiconductor device. 4. The method of claim 3, wherein exposing the at least a portion of the tape to optical energy includes exposing the tape on the edge portion of the packaged semiconductor device. 5. The method of claim 1, wherein the optical energy-markable properties of the tape are embedded within the tape. 6. The method of claim 1, wherein the optical energy-markable properties of the tape comprise properties of at least one adhesive layer affixed to the tape. 7. The method of claim 6, wherein the at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof. 8. The method of claim 6, wherein the at least one adhesive layer is UV-sensitive. 9. The method of claim 6, wherein the at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between the tape and the first outermost layer. 10. The method of claim 1, further comprising: applying a second tape over at least a portion of a surface of the tape; and exposing at least a portion of the second tape. 11. The method of claim 10, wherein the second tape is a carrier tape. 12. The method of claim 11, wherein the carrier tape includes a carrier tape having translucent properties. 13. The method of claim 11, wherein the second tape includes a tape having optical energy-markable properties. 14. The method of claim 1, wherein the tape comprises polytetrafluoroethylene tape. 15. The method of claim 1, wherein exposing at least a portion of the tape to optical energy comprises exposing the at least a portion of the tape to one of an Nd:YAG laser (yttrium aluminum garnet), an Nd:YLP laser (pulsed ytterbium fiber), or a carbon dioxide laser. 16. The method of claim 1, wherein exposing the at least a portion of the tape to optical energy includes exposing the at least a portion of the tape to an ultraviolet light source. 17. The method of claim 16, wherein the tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon. 18. The method of claim 1, wherein the tape includes a tape having antistatic capacities. 19. The method of claim 1, wherein the tape includes a tape of a thermally dissipating material. 20. The method of claim 1, wherein the tape includes a tape having a coefficient of thermal expansion substantially similar to that of the packaged semiconductor device. 21. The method of claim 1, wherein forming the mark includes one of heating, chemically reacting, or transferring materials comprising the tape. 22. A method of marking a packaged semiconductor device having a semiconductor die comprising: providing a semiconductor die in wafer form; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 23. The method of claim 22, wherein the packaged semiconductor device comprises at least one integrated circuit semiconductor die. 24. The method of claim 22, wherein applying the tape to the at least a portion of a surface of the packaged semiconductor device includes applying the tape to an edge portion of the packaged semiconductor device. 25. The method of claim 24, wherein exposing the at least a portion of the tape to optical energy includes exposing the tape on the edge portion of the packaged semiconductor device. 26. The method of claim 22, wherein the optical energy-markable properties of the tape are embedded within the tape. 27. The method of claim 22, wherein the optical energy-markable properties of the tape comprise properties of at least one adhesive layer affixed to the tape. 28. The method of claim 27, wherein the at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof. 29. The method of claim 27, wherein the at least one adhesive layer is UV-sensitive. 30. The method of claim 27, wherein the at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between the tape and the first outermost layer. 31. The method of claim 22, further comprising: applying a second tape over at least a portion of a surface of the tape; and exposing at least a portion of the second tape. 32. The method of claim 31, wherein the second tape is a carrier tape. 33. The method of claim 32, wherein the carrier tape includes a carrier tape having translucent properties. 34. The method of claim 32, wherein the second tape includes a tape having optical energy-markable properties. 35. The method of claim 22, wherein the tape comprises polytetrafluoroethylene tape. 36. The method of claim 22, wherein exposing the at least a portion of the tape to optical energy comprises exposing the at least a portion of the tape to one of an Nd:YAG laser (yttrium aluminum garnet), an Nd:YLP laser (pulsed ytterbium fiber), or a carbon dioxide laser. 37. The method of claim 22, wherein exposing the at least a portion of the tape to optical energy includes exposing the at least a portion of the tape to an ultraviolet light source. 38. The method of claim 37, wherein the tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon. 39. The method of claim 22, wherein the tape includes a tape having antistatic capacities. 40. The method of claim 22, wherein the tape includes a tape of a thermally dissipating material. 41. The method of claim 22, wherein the tape includes a tape having a coefficient of thermal expansion substantially similar to that of the packaged semiconductor device. 42. The method of claim 22, wherein forming the mark includes at least one of heating, chemically reacting, or transferring materials comprising the tape. 43. A method of marking a semiconductor die comprising: providing a semiconductor die having a reduced cross-section in wafer form; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 44. The method of claim 43, wherein the semiconductor die comprises at least one integrated circuit semiconductor die. 45. The method of claim 43, wherein applying the tape to the at least a portion of the surface of the semiconductor die includes applying the tape to an edge portion of the semiconductor die. 46. The method of claim 45, wherein exposing the at least a portion of the tape to optical energy includes exposing the tape on the edge portion of the semiconductor die. 47. The method of claim 43, wherein the optical energy-markable properties of the tape are embedded within the tape. 48. The method of claim 43, wherein the optical energy-markable properties of the tape comprise properties of at least one adhesive layer affixed to the tape. 49. The method of claim 48, wherein the at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof. 50. The method of claim 48, wherein the at least one adhesive layer is UV-sensitive. 51. The method of claim 48, wherein the at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between the tape and the first outermost layer. 52. The method of claim 43, further comprising: applying a second tape over at least a portion of a surface of the tape; and exposing at least a portion of the second tape. 53. The method of claim 52, wherein the second tape is a carrier tape. 54. The method of claim 53, wherein the carrier tape includes a carrier tape having translucent properties. 55. The method of claim 53, wherein the second tape includes a tape having optical energy-markable properties. 56. The method of claim 43, wherein the tape comprises polytetrafluoroethylene tape. 57. The method of claim 43, wherein exposing the at least a portion of the tape to optical energy comprises exposing the at least a portion of the tape to one of an Nd:YAG laser (yttrium aluminum garnet), an Nd:YLP laser (pulsed ytterbium fiber), or a carbon dioxide laser. 58. The method of claim 43, wherein exposing the at least a portion of the tape to optical energy includes exposing the at least a portion of the tape to an ultraviolet light source. 59. The method of claim 58, wherein the tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon. 60. The method of claim 43, wherein the tape includes a tape having antistatic capacities. 61. The method of claim 43, wherein the tape includes a tape of a thermally dissipating material. 62. The method of claim 43, wherein the tape includes a tape having a coefficient of thermal expansion substantially similar to that of the packaged semiconductor device. 63. The method of claim 43, wherein forming the mark includes one of heating, chemically reacting, or transferring materials comprising the tape. 64. A method of marking a packaged semiconductor device comprising: providing a semiconductor die having a reduced cross-section in sliced wafer form; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 65. A method of marking a packaged semiconductor device having a semiconductor die comprising: providing a semiconductor die in sliced wafer form; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 66. A method of marking a semiconductor die comprising: providing a semiconductor die having a reduced cross-section in sliced wafer form; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 67. A method of marking a packaged semiconductor device comprising: providing a semiconductor die having a reduced cross-section as a portion of a wafer; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 68. A method of marking a packaged semiconductor device having a semiconductor die comprising: providing a semiconductor die as a portion of a wafer; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 69. A method of marking a semiconductor die comprising: providing a semiconductor die having a reduced cross-section as a portion of a wafer; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 70. A method of marking a packaged semiconductor device comprising: providing a semiconductor die having a reduced cross-section as a portion of a sliced wafer; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 71. A method of marking a packaged semiconductor device having a semiconductor die comprising: providing the semiconductor die as a portion of a sliced wafer; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark. 72. A method of marking a semiconductor die comprising: providing a semiconductor die having a reduced cross-section as a portion of a sliced wafer; packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface; applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device; subsequently exposing at least a portion of the tape to optical energy; and forming a mark.