초록 ▼

A method for producing wafer splitting from ion implantation into silicon after low temperature direct bonding with surface roughness that is ˜1 nm (RMS). This result is an order of magnitude smoother than the previous work (˜10 nm RMS). The key improvement in this work is the use of a low

A method for producing wafer splitting from ion implantation into silicon after low temperature direct bonding with surface roughness that is ˜1 nm (RMS). This result is an order of magnitude smoother than the previous work (˜10 nm RMS). The key improvement in this work is the use of a low temperature bond resulting in a strong bond before the material is cut. The smooth as-split surfaces produced using a low temperature bond are very important for creation of very thin (<50 nm) silicon-on-insulator (SOI), three-dimensional bonded structures and nanostructures that are split after processing.

대표청구항 ▼

What is claimed is: 1. A method for producing smooth thin film layers, comprising: implanting a first material with ions to define a cut line in a first material; bonding said first material to a second material with a low temperature bond at a temperature equal to or less than 200째 C.; and ion cut

What is claimed is: 1. A method for producing smooth thin film layers, comprising: implanting a first material with ions to define a cut line in a first material; bonding said first material to a second material with a low temperature bond at a temperature equal to or less than 200째 C.; and ion cutting said first material along said cut line to expunge a layer of said first material bonded to the second material; wherein said first material is bonded to said second material using low temperature plasma bonding. 2. A method as recited in claim 1, wherein said first material is implanted with hydrogen ions with a dose of between approximately 5횞1016 and approximately 1횞1017 ions/cm2 at room temperature with energies in the range between approximately 22 KeV and approximately 100 KeV. 3. A method as recited in claim 1, wherein at least one of said first and second materials is selected from the group of materials consisting essentially of Si, Ge, and GaAs. 4. A method as recited in claim 1, wherein said plasma bonding is selected from the group consisting essentially of O2 plasma bonding and NH3 plasma bonding. 5. A method for producing smooth thin film layers, comprising: implanting a first material with ions to define a cut line in said first material; bonding said first material to a second material with a low temperature bond at a temperature equal to or less than 200째 C.; and expunging a layer of said first material bonded to said second material with an ion cut; wherein said first material is bonded to said second material using low temperature plasma bonding. 6. A method as recited in claim 5, wherein said first material is implanted with hydrogen ions with a dose of between approximately 5횞1016 and approximately 1횞1017 ions/cm2 at room temperature with energies in the range between approximately 22 KeV and approximately 100 KeV. 7. A method as recited in claim 5, wherein at least one of said first and second materials is selected from the group of materials consisting essentially of Si, Ge, and GaAs. 8. A method as recited in claim 5, wherein said plasma bonding is selected from the group consisting essentially of O2 plasma bonding and NH3 plasma bonding. 9. A method for producing smooth thin film layers, comprising: implanting a first material with hydrogen ions with a dose of between approximately 5횞1016 and approximately 1횞1017 ions/cm2 at room temperature with energies in the range between approximately 22 KeV and approximately 100 KeV to define a cut line in said first material; bonding said first material to a second material using low temperature plasma bonding at a temperature equal to or less than 200째 C.; and expunging a layer of said first material bonded to said second material with an ion cut. 10. A method as recited in claim 9, wherein at least one of said first and second materials is selected from the group of materials consisting essentially of Si, Ge, and GaAs. 11. A method as recited in claim 9, wherein said low temperature plasma bonding is selected from the group consisting essentially of O2 plasma bonding and NH3 plasma bonding. 12. A method for producing smooth thin film layers, comprising: injecting a dose of ions into a first material, wherein said ions form a cut line in said first material; bonding said first material to a second material at a temperature lower than required to expunge a layer of said first material along said cut line; said temperature being equal to or less than 200째 C.; and using an ion cut, expunging a layer of said first material bonded to said second material; wherein said first material is bonded to said second material using low temperature plasma bonding. 13. A method as recited in claim 12, wherein said first material is implanted with hydrogen ions with a dose of between approximately 5횞1016 and approximately 1횞1017 ions/cm2 at room temperature with energies in the range between approximately 22 KeV and approximately 100 KeV. 14. A method as recited in claim 12, wherein at least one of said first and second materials is selected from the group of materials consisting essentially of Si, Ge, and GaAs. 15. A method as recited in claim 12, wherein said low temperature plasma bonding is selected from the group consisting essentially of O2 plasma bonding and NH3 plasma bonding. 16. A method for producing smooth thin film layers by low temperature ion cut, comprising: injecting into a first material a dose of hydrogen ions between approximately 5횞1016 and approximately 1횞1017 ions/cm2 at room temperature with energies in the range between approximately 22 KeV and approximately 100 KeV, wherein said ions form a cut line in said first material; using plasma bonding, bonding said first material to a second material at a temperature lower than required to expunge a layer of said first material along said cut line; and using an ion cut, expunging a layer of said first material bonded to said second material. 17. A method as recited in claim 16, wherein at least one of said first and second materials is selected from the group of materials consisting essentially of Si, Ge, and GaAs. 18. A method as recited in claim 16, wherein said plasma bonding is selected from the group consisting essentially of O2 plasma bonding and NH3 plasma bonding. 19. A method for producing smooth thin film layers by low temperature ion cut, comprising: injecting a first material with hydrogen ions with a dose of approximately 5횞1016 to approximately 1횞1017 ions/cm 2 at room temperature with energies in the range of approximately 22 KeV to approximately 100 KeV; said injected ions defining a cut line between segments in said first material; forming a low temperature plasma bond between said first material and a second material; and cutting said first material along said cut line to expunge a thin, smooth layer of said first material attached to second material by said low temperature bond. 20. A method as recited in claim 19, wherein at least one of said first and second materials is selected from the group of materials consisting essentially of Si, Ge, and GaAs. 21. A method as recited in claim 19, wherein said low temperature plasma bond is selected from the group consisting essentially of an O2 plasma bond and an NH3 plasma bond.