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High pressure/high temperature apparatus with improved temperature control for crystal growth 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-029/40
  • C30B-029/10
출원번호 US-0699504 (2003-10-31)
발명자 / 주소
  • D'Evelyn,Mark P.
  • Leonelli, Jr.,Robert V.
  • Allison,Peter S.
  • Narang,Kristi J.
  • Giddings,Robert A.
출원인 / 주소
  • General Electric Company
인용정보 피인용 횟수 : 40  인용 특허 : 6

초록

A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.

대표청구항

We claim: 1. A high temperature/high pressure (HP/HT) apparatus, which comprises: (a) a pressure vessel comprising a cell for growing crystals or processing material in a liquid or solid pressure transmitting medium; (b) at least a heating element for heating said cell; (c) at least an electrical

이 특허에 인용된 특허 (6)

  1. Robert V. Leonelli, Jr., High pressure apparatus having transition slope binding ring that mitigates tensile stresses and corresponding method.
  2. Frushour Robert H. (2313 Devonshire Ann Arbor MI 48104), High pressure reaction vessel.
  3. Fujikawa Takao,JPX ; Narukawa Yutaka,JPX ; Masuda Tsuneharu,JPX ; Kadoguchi Makoto,JPX, Method and device for high-temperature, high-pressure treatment of semiconductor wafer.
  4. Porowski Sylwester,PLX ; Bockowski Michal,PLX ; Grzegory Izabella,PLX ; Krukowski Stanislaw,PLX ; Leszczynski Michal,PLX ; Lucznik Boleslaw,PLX ; Suski Tadeusz,PLX ; Wroblewski Miroslaw,PLX, Method of fabrication of highly resistive GaN bulk crystals.
  5. Kilham Lawrence B. (Secaucus NJ) LeBlon Maurice W. (East Brunswick NJ), Sampling flow cell with diamond window.
  6. Zacharias ; Jr. Ellis M. (Tulsa OK), Sonic flow meter having improved flow straighteners.

이 특허를 인용한 특허 (40)

  1. D'Evelyn, Mark P., Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride.
  2. D'Evelyn, Mark Philip; Giddings, Robert Arthur; Sharifi, Fred; Dey, Subhrajit; Hong, Huicong; Kapp, Joseph Alexander; Khare, Ashok Kumar, Apparatus for processing materials in supercritical fluids and methods thereof.
  3. Tajima, Itsuro; Wardoyo, Akhmadi Eko; Fukunaga, Osamu, Diamond sintered compact having high electrical conductivity and production method thereof.
  4. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William, Gallium-nitride-on-handle substrate materials and devices and method of manufacture.
  5. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William D., Gallium—nitride-on-handle substrate materials and devices and method of manufacture.
  6. Schmidt, Mathew; D'Evelyn, Mark P., High indium containing InGaN substrates for long wavelength optical devices.
  7. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  8. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  9. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  10. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  11. Pakalapati, Rajeev T.; D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  12. D'Evelyn, Mark P.; Kapp, Joseph A.; Lawrenson, John C., High pressure apparatus with stackable rings.
  13. D'Evelyn, Mark Philip; Narang, Kristi Jean; Giddings, Robert Arthur; Tysoe, Steven Alfred; Lucek, John William; Vagarali, Suresh Shankarappa; Leonelli, Jr., Robert Vincent; Dysart, Joel Rice, High temperature high pressure capsule for processing materials in supercritical fluids.
  14. D'Evelyn, Mark P.; Speck, James S.; Kamber, Derrick S.; Pocius, Douglas W., Large area nitride crystal and method for making it.
  15. D'Evelyn, Mark P.; Poblenz, Christiane; Krames, Michael R., Method for growth of indium-containing nitride films.
  16. Voronov, Oleg A.; Kear, Bernard H., Method for rapidly synthesizing monolithic polycrystalline diamond articles.
  17. D'Evelyn, Mark P.; Speck, James S., Method for synthesis of high quality large area bulk gallium based crystals.
  18. Krames, Mike; D'Evelyn, Mark; Pakalapati, Rajeev; Alexander, Alex; Kamber, Derrick, Method of making bulk InGaN substrates and devices thereon.
  19. Sasagawa, Yuji; Wakao, Osamu; Yamamura, Yoshihiko; Akatsuka, Shigeharu; Matsushita, Keiichiro, Method of manufacturing a pressure vessel for growing single crystals.
  20. Khabashesku, Valery N.; Davydov, Valery A.; Rakhmanina, Alexandra V., Method of producing diamond powder and doped diamonds.
  21. D'Evelyn, Mark P.; Sharma, Rajat, Microcavity light emitting diode method of manufacture.
  22. Zhu, Hexiang; Pearson, Karl; Kim, Joo Ro, Multilayer structure for a diamond growth and a method of providing the same.
  23. D'Evelyn, Mark P., Nitride crystal with removable surface layer and methods of manufacture.
  24. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M., Photonic-crystal light emitting diode and method of manufacture.
  25. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M.; Feezell, Daniel F., Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors.
  26. D'Evelyn, Mark P., Polycrystalline group III metal nitride with getter and method of making.
  27. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
  28. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
  29. Sasagawa, Yuji; Wakao, Osamu; Yamamura, Yoshihiko; Akatsuka, Shigeharu; Matsushita, Keiichiro, Pressure vessel for growing single crystals.
  30. D'Evelyn, Mark P., Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer.
  31. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
  32. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
  33. D'Evelyn, Mark P., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
  34. D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
  35. D'Evelyn, Mark P., Semi-insulating group III metal nitride and method of manufacture.
  36. Sharma, Rajat; Hall, Eric M.; Poblenz, Christiane; D'Evelyn, Mark P., Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods.
  37. Jiang, Wenkan; Ehrentraut, Dirk; D'Evelyn, Mark P., Transparent group III metal nitride and method of manufacture.
  38. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
  39. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
  40. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
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