초록 ▼

A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the

A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.

대표청구항 ▼

What is claimed is: 1. A method of thin film deposition, comprising: positioning a substrate having high aspect ratio features in a deposition chamber; providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more process gases for depositing material on the subst

What is claimed is: 1. A method of thin film deposition, comprising: positioning a substrate having high aspect ratio features in a deposition chamber; providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more process gases for depositing material on the substrate and one or more chemical etch species for chemically etching material deposited on the substrate; and depositing a material layer on the substrate from the gas mixture at a temperature less than about 450째 C., wherein the one or more chemical etch species in the gas mixture selectively removes portions of the material layer deposited adjacent to the high aspect ratio features while depositing the material layer, wherein the one or more chemical etch species are provided to the chamber through one or more orifices capable of directing such one or more chemical etch species in a collimated manner toward the substrate, and wherein the one or more orifices move relative to the substrate at a rate greater than about 0.1 cm/min. 2. The method of claim 1 wherein the deposition chamber is a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber. 3. The method of claim 1 wherein the material layer is formed of a material selected from the group consisting of a metal, a metal nitride and an oxide.