초록

A method of tuning a dielectric resonator uses a ferroelectric element to change the dielectric resonator electric field and hence the resonance frequency of the dielectric resonator.

대표청구항 ▼

The invention claimed is: 1. A method of tuning a dielectric resonator which resonator comprises a cavity within which is mounted a dielectric which method comprises changing the frequency of the resonator by a frequency changing means which is operated using a ferroelectric element in which a DC b

The invention claimed is: 1. A method of tuning a dielectric resonator which resonator comprises a cavity within which is mounted a dielectric which method comprises changing the frequency of the resonator by a frequency changing means which is operated using a ferroelectric element in which a DC bias is applied across the ferroelectric element to decrease the relative permittivity of the ferroelectric element which affects the dielectric resonator electric field and changes the resonance frequency of the resonator, in which the ferroelectric element is a ferroelectric film, in which the ferroelectric film is mounted on a conductive base on which is positioned a spacer and the dielectric is mounted on the spacer, in which the conductive base, on which is formed the ferroelectric element, is supported on a floor of the resonator, the dielectric element and spacer are ring shaped, the spacer is positioned on the ferroelectric element and the dielectric element is placed on the spacer, and in which there is a wire electrode which passes through the spacer and the dielectric element and is connected to the ferroelectric element, there being a means to apply a DC bias to the ferroelectric element through the conductive base and the wire. 2. A method as claimed in claim 1 in which the spacer is made of a low loss low dielectric constant spacer. 3. A method as claimed in claim 1 in which the ferroelectric element is ferroelectric film grown on a conductive substrate. 4. A method as claimed in claim 1 in which the ferroelectric element is ferroelectric film grown on a resonator cavity bottom, a resonator upper plate, or on one or more of resonator surrounding cavity walls. 5. A tuneable dielectric resonator which comprises a cavity within which is mounted a dielectric and a frequency changing means and in which the frequency changing means is operated using a ferroelectric element, in which a DC bias is applied across the ferroelectric element to decrease the relative permittivity of the ferroelectric element which affects the dielectric resonator electric field and changes the resonance frequency of the resonator, in which the ferroelectric element is a ferroelectric film, in which the ferroelectric film is mounted on a conductive base on which is positioned a spacer and the dielectric is mounted on the spacer, in which the conductive base, on which is formed the ferroelectric element, is supported on a floor of the resonator, the dielectric element and spacer are ring shaped, the spacer is positioned on the ferroelectric element and the dielectric element is placed on the spacer, and in which there is a wire electrode which passes through the spacer and the dielectric element and is connected to the ferroelectric element, there being a means to apply a DC bias to the ferroelectric element through the conductive base and the wire. 6. A tuneable dielectric resonator as claimed in claim 5 in which the spacer is made of a low loss low dielectric constant. 7. A tuneable dielectric resonator as claimed in claim 5 in which the ferroelectric element is mounted on the resonator cavity bottom or resonator upper plate, or surrounding resonator cavity walls. 8. A tuneable dielectric resonator as claimed in claim 5 in which the frequency changing means comprises a ferroelectric element on which is mounted a dielectric resonator. 9. A tuneable dielectric resonator as claimed in claim 5 in which the ferroelectric material is BaxSr1-xTiO 3.