초록 ▼

A GMR bottom spin valve sensor longitudinally exchange biased with a zero net magnetic moment biasing multi-layer is provided, together with a method of forming said sensor. The sensor may be additionally biased with a hard biasing layer formed against an abutted junction. The exchange biasing provi

A GMR bottom spin valve sensor longitudinally exchange biased with a zero net magnetic moment biasing multi-layer is provided, together with a method of forming said sensor. The sensor may be additionally biased with a hard biasing layer formed against an abutted junction. The exchange biasing provides the advantages of a highly sensitive free layer in the bottom spin valve sensor element, while producing very strong exchange pinning of the lateral ends of the free layer. The zero net magnetic moment assures stability in the lateral edge and central region of the free layer.

대표청구항 ▼

What is claimed is: 1. A spin valve sensor having a patterned synthetic antiferromagnetic exchange biasing multi-layer with a zero net magnetic moment, comprising: a substrate a bottom spin valve sensor element formed on the substrate; a patterned synthetic antiferromagnetic biasing multi-layer ex

What is claimed is: 1. A spin valve sensor having a patterned synthetic antiferromagnetic exchange biasing multi-layer with a zero net magnetic moment, comprising: a substrate a bottom spin valve sensor element formed on the substrate; a patterned synthetic antiferromagnetic biasing multi-layer exchange coupled to said sensor element and having, thereby, a net magnetic moment which is substantially zero; a capping layer formed on said patterned biasing layer; a conducting lead layer formed on said capping layer. 2. The sensor of claim 1 wherein the bottom spin valve sensor element comprises; a seed layer; an antiferromagnetic pinning layer formed on the seed layer; a synthetic antiferromagnetic pinned layer formed on the pinning layer; a non-magnetic spacer layer formed on said pinned layer; a ferromagnetic free layer formed on said spacer layer. 3. The sensor of claim 2 wherein the sensor element seed layer is a layer chosen from the group of GMR property enhancing materials including NiFeCr, NiCr, and the multilayers of such materials NiFeCr/NiFe and NiCr/NiFe. 4. The sensor of claim 2 wherein the ferromagnetic free layer is a layer of ferromagnetic material chosen from the group of ferromagnetic materials including, Co, CoFe, and the multilayers of such materials CoFe/NiFe and CoFe/NiFe/CoFe. 5. The sensor of claim 2 wherein the zero magnetic moment synthetic antiferromagnetic biasing multi-layer comprises: a first antiferromagnetically coupling layer formed on the free ferromagnetic layer of said bottom spin valve sensor element; a first ferromagnetic layer formed on the first coupling layer and antiferromagnetically exchange coupled to the ferromagnetic free layer of the sensor element; an antiferromagnetic layer formed on the first ferromagnetic layer; a second ferromagnetic layer formed on the antiferromagnetic layer; a second antiferromagnetically coupling layer formed on the second ferromagnetic layer; a third ferromagnetic layer antiferromagnetically exchange coupled to the second ferromagnetic layer; and wherein the magnetic moments of the first and second ferromagnetic layers are substantially equal and directed opposite to the magnetic moment of the third ferromagnetic layer and wherein the sum of the three magnetic moments is substantially zero. 6. The sensor of claim 5 wherein the first and second ferromagnetic layers of the biasing multi-layer are layers of Co or CoFe. 7. The sensor of claim 6 wherein the first and second ferromagnetic layers of the biasing multi-layer are formed to a thickness of between approximately 10 and 30 angstroms. 8. The sensor of claim 7 wherein the third ferromagnetic layer of the biasing multi-layer is chosen to have a magnetic moment that is equal and opposite to the sum of the magnetic moments of the first and second ferromagnetic layers. 9. The sensor of claim 8 wherein the third ferromagnetic layer of the biasing multi-layer is a layer of Co or CoFe. 10. The sensor of claim 9 wherein the third ferromagnetic layer of the biasing multi-layer is formed to a thickness between approximately 20 and 60 angstroms. 11. The biasing multi-layer of claim 10 wherein it is patterned to form two laterally separated portions of substantially equal dimension, one portion being on each lateral end of the bottom spin-valve sensor element and wherein the separation of the two portions define the track-width of the head. 12. The sensor of claim 4 further comprising: a hard bias layer formed abutting the lateral ends of said sensor element in an abutted junction configuration and also abutting the lateral ends of said exchange coupled biasing layer, said capping layer and said lead layer; a second lead layer formed over said hard bias layer and extending over a portion of said first lead layer. 13. The sensor of claim 12 formed between a lower magnetic shield and an upper magnetic shield and being insulated from each shield by a dielectric layer, forming, thereby, a GMR bottom spin-valve read head.