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The invention relates to a method for structuring an oxide layer applied to a substrate material. The aim of he invention is to provide an inexpensive method for structuring such an oxide layer. To this end, a squeegee paste that contains an oxide-etching component is printed on the oxide layer thro

The invention relates to a method for structuring an oxide layer applied to a substrate material. The aim of he invention is to provide an inexpensive method for structuring such an oxide layer. To this end, a squeegee paste that contains an oxide-etching component is printed on the oxide layer through a pattern stencil after silk screen printing and the printed squeegee paste is removed after a determined dwelling time.

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We claim: 1. A method for manufacturing a solar cell with a selective emitter layer, comprising the following steps: providing a p-doped semiconductor wafer having a surface, with a front side comprising a light-facing side, and a rear side; forming the selective emitter layer on the light-facing s

We claim: 1. A method for manufacturing a solar cell with a selective emitter layer, comprising the following steps: providing a p-doped semiconductor wafer having a surface, with a front side comprising a light-facing side, and a rear side; forming the selective emitter layer on the light-facing side by: applying an oxide layer on the light-facing side of the p-doped wafer; Structuring the oxide layer, using a screen printing process, wherein a squeegee paste containing an oxide-etching component is printed onto the oxide layer via a pattern stencil and the printed-on squeegee paste is removed again after a predetermined dwell time, to form structured areas; introducing a selective high degree of n-doping in the structured areas; removing the oxide layer; introducing weak n-doping, including over a large part of the surface of the wafer between the structured areas; and contacting of the light-facing side in areas of the selective high degree of n-doping. 2. The method according to claim 1, wherein the n-doping is introduced by means of phosphorus doping. 3. The method according to claim 2, wherein a phosphorus glass (POCl3) formed during introducing the phosphorus doping is removed in a subsequent etching step. 4. The method according to claim 1, wherein the front side is contacted with a silver squeegee paste. 5. Use of a squeegee paste comprising a binding agent and an oxide-etching component in a method for manufacturing a solar cell with a selective emitter layer on the light-facing side according to claim 1. 6. A method for production of a solar cell with a selective emitter layer and a back-surface-field, comprising the following steps: providing a p-doped semiconductor wafer having a surface, with a front side comprising a light-facing side and a rear side, and an edge; forming the selective emitter layer on the light-facing side and the back-surface-field on the rear side by: applying to the rear side of the wafer a diffusion source layer containing boron as a dopant; treating the wafer in an oxygenous atmosphere at a temperature of 900째 C. to 1200째 C. to create an oxide layer and drive the dopant in; Structuring the oxide layer on the light-facing side of the wafer, using a screen printing process, wherein a squeegee paste containing an oxide-etching component is printed onto the oxide layer via a pattern stencil and the printed-on squeegee paste is removed again after a predetermined dwell time, to form structured areas; introducing a selective high degree of n-doping in the structured areas; removing the diffusion source layer and the oxide layer; introducing a weak n-doping, including over a large part of the surface of the wafer between the structured areas; contacting the light-facing side in areas of the selective high degree of n-doping; and applying a back contact to the rear side. 7. The method according to claim 6, wherein a boron-dopant coating or a boron-dopant paste is applied to act as the diffusion source layer. 8. The method according to claim 6, wherein the diffusion source layer and oxide layer are removed by etching with an HF solution. 9. The method according to claim 6, wherein the n-doping, is introduced by means of phosphorus doping. 10. The method according to claim 9, wherein a phosphorus glass (POCl3) formed during introducing of the phosphorus doping is removed in a subsequent etching step. 11. The method according to claim 6, wherein the front side is contacted with a silver squeegee paste. 12. The method according to claim 6, wherein the rear side is contacted with a silver squeegee paste containing 1% to 3% by weight of aluminium. 13. The method according to claim 6, wherein the rear side is contacted in such a way that the boron doping is overcompensated by a flat n+-doping between the areas covered by the back contact. 14. The method according claim 6, wherein an anti-reflection layer is applied to the light-facing side and a passivation layer to the rear side. 15. Use of a squeegee paste comprising a binding agent and an oxide-etching component in a method for manufacturing a solar cell with a selective emitter layer on the light-facing side and a back surface field on the rear side according to claim 6. 16. The method according to claim 1 or 6, wherein the oxide-etching component consists of hydrofluoric acid (HF) and/or ammonium fluoride (NH4F) and/or ammonium hydrogen fluoride (NH4 HF2). 17. The method according to claim 1 or 6, wherein the oxide-etching component constitutes a proportion of 10% to 20% by volume of the squeegee paste. 18. The method according to claim 1 or 6, wherein the dwell time ranges from 30 seconds to 2 minutes. 19. The method according to claim 1 or 6, wherein the semiconductor wafer is a silicon wafer. 20. The method according to claim 1 or 6, wherein the light-facing side is contacted using the screen printing process. 21. The method according to claim 1 or 6, wherein the n-doping is depleted at the edge of the wafer after introducing the weak n-doping. 22. The method according claim 21, wherein the depleting of the n-doping at the edge of the wafer is carried out by etching of the edge. 23. The use according to claim 5 or 15, wherein the binding agent comprises wallpaper paste. 24. The use according to claim 5 or 15, wherein the binding agent consists of an epoxy resin. 25. The use according to claim 5 or 15, wherein the squeegee paste has a viscosity of between 10 and 500 Pa-s. 26. The use according to claim 5 or 15, wherein the oxide-etching component comprises hydrofluoric acid (HF) and/or ammonium fluoride (NH4F) and/or ammonium hydrogen fluoride (NH4HF2) as the oxide-etching component. 27. The use according to claim 5 or 15, wherein the oxide-etching component constitutes a proportion of 10% to 20% by volume of the squeegee paste. 28. The use according to claim 5 or 15, wherein the squeegee paste has a viscosity of between 50 and 200 Pa-s.