초록 ▼

A high thermal conductive material includes substantially silicon carbide and metal silicon, and preferably is formed by impregnating the space between the bonded silicon carbide crystals with the metal silicon. The production process comprises adding an organic binder and a dispersant or a binder h

A high thermal conductive material includes substantially silicon carbide and metal silicon, and preferably is formed by impregnating the space between the bonded silicon carbide crystals with the metal silicon. The production process comprises adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture, forming the mixture by cast forming or pressure forming to obtain a formed product, treating the formed product with heat at 2,100-2,500째 C. for 1-5 hours to obtain a base material, impregnating the base material with an organic resin, treating the base material with heat, and impregnating the base material with metal silicon at 1,450-1,800째 C. under reduced pressure. The high thermal conductive material exhibits not only properties that satisfy the balance between the coefficient of thermal expansion and the coefficient of thermal conductivity required for actual electronic components (including semiconductor devices) and the like, but also high thermal conductivity.

대표청구항 ▼

What is claimed is: 1. A high thermal conductive material, comprising substantially silicon carbide and metal silicon wherein (1) voids formed by bonding crystals of the silicon carbide are impregnated with the metal silicon, (2) the metal silicon is contained in an amount of 4-30 wt % and (3) the

What is claimed is: 1. A high thermal conductive material, comprising substantially silicon carbide and metal silicon wherein (1) voids formed by bonding crystals of the silicon carbide are impregnated with the metal silicon, (2) the metal silicon is contained in an amount of 4-30 wt % and (3) the high thermal conductive material has a bulk specific gravity of 2. 95-3.05, a coefficient of thermal expansion of no more than 3횞10-6/K, and a coefficient of thermal conductivity of 190 W/mK or more. 2. The high thermal conductive material according to claim 1, wherein the silicon carbide consists essentially of α-SiC. 3. The high thermal conductive material comprising substantially silicon carbide and metal silicon wherein (1) voids formed by bonding crystals of the silicon carbide are impregnated with the metal silicon, (2) the metal silicon is contained in an amount of 4-20 wt % and (3) the high thermal conductive material has a bulk specific gravity of 3. 05-3.18, a coefficient of thermal expansion of no more than 3횞10-6/K, and a coefficient of thermal conductivity of 230 W/mK or more. 4. The high thermal conductive material comprising substantially silicon carbide and metal silicon wherein (1) voids formed by bonding crystals of the silicon carbide are impregnated with the metal silicon, (2) the metal silicon is contained in an amount of 4-15 wt % and (3) the high thermal conductive material has a bulk specific gravity of 3. 08-3.18, a coefficient of thermal expansion of no more than 3횞10-6/K, and a coefficient of thermal conductivity of 250 W/mK or more. 5. The high thermal conductive material according to claim 3, wherein the silicon carbide consists essentially of α-SiC and β-SiC. 6. The high thermal conductive material according to claim 4, wherein the silicon carbide consists essentially of α-SiC and β-SiC. 7. A process for producing the high thermal conductive material according to claim 1, which comprises: adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture, forming the mixture by cast forming or pressure forming to obtain a formed product, treating the formed product with heat at 2,100-2,500째 C. for 1-5 hours to obtain a base material, and impregnating the base material with metal silicon at 1,450-1, 800째 C. under reduced pressure. 8. A process for producing the high thermal conductive material according to claim 3, which comprises: adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture, forming the mixture by cast forming or pressure forming to obtain a formed product, treating the formed product with heat at 2,100-2,500째 C. for 1-5 hours to obtain a base material, impregnating the base material with an organic resin, drying the base material, treating the base material with heat, and impregnating the base material with metal silicon at 1,450-1, 800째 C. under reduced pressure. 9. A process for producing the high thermal conductive material according to claim 4, which comprises: adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture, forming the mixture by cast forming or pressure forming to obtain a formed product, treating the formed product with heat at 2,100-2,500째 C. for 1-5 hours to obtain a base material, impregnating the base material with an organic resin, drying the base material, treating the base material with heat, impregnating the base material with metal silicon at 1,450-1, 800째 C. under reduced pressure, treating the base material with heat at 2,100-2,500째 C. for 1-5 hours, and impregnating the base material with the metal silicon at 1, 450-1,800째 C. under reduced pressure. 10. The process for producing a high thermal conductive material according to claim 8, wherein the residual carbon content in the organic resin is 30 wt % or more. 11. The process for producing a high thermal conductive material according to claim 9, wherein the residual carbon content in the organic resin is 30 wt % or more. 12. The process for producing a high thermal conductive material according to claim 8, wherein the base material is treated with heat at 200-1,000째 C. in a non-oxidizing atmosphere after being impregnated with the organic resin and dried. 13. The process for producing a high thermal conductive material according to claim 9, wherein the base material is treated with heat at 200-1,000째 C. in a non-oxidizing atmosphere after being impregnated with the organic resin and dried. 14. The process for producing a high thermal conductive material according to claim 8, wherein impregnation with the organic resin, drying, and heat treatment are respectively carried out at least once. 15. The process for producing a high thermal conductive material according to claim 9, wherein impregnation with the organic resin, drying, and heat treatment are respectively carried out at least once. 16. The process for producing a high thermal conductive material according to claim 8, wherein the organic resin is a phenolic resin. 17. The process for producing a high thermal conductive material according to claim 9, wherein the organic resin is a phenolic resin. 18. A process for producing a high thermal conductive material comprising substantially silicon carbide and metal silicon, wherein (1) voids formed by bonding crystals of the silicon carbide are impregnated with the metal silicon, (2) the metal silicon is present in an amount of 4 to 30 wt. %, and (3) the high thermal conductive material has a bulk specific gravity of 2.95 to 3.05 and a coefficient of thermal conductivity of at least 190 W/mK, comprising adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture; forming the mixture by cast forming or pressure forming to obtain a formed product; treating the formed product with heat at 2,100째 C. to 2,500째 C. for 1 to 5 hours to obtain a base material; and impregnating the base material with metal silicon at 1,450째 C. to 1,800째 C. under reduced pressure , wherein the silicon carbide powder comprises 30-60 wt % of coarse particles with an average particle size of 50-150 μm, 1-5 wt % of medium particles with an average particle size of 5-50 μm, 1-5 wt % of medium particles with an average particle size of 1-10 μm, and 30-60 wt % of fine particles with an average particle size of 0.1-5 μm. 19. A process for producing a high thermal conductive material comprising substantially silicon carbide and metal silicon, wherein (1) voids formed by bonding crystals of the silicon carbide are impregnated with the metal silicon, (2) the metal silicon is present in an amount of 4 to 20 wt. %, and (3) the high thermal conductive material has a bulk specific gravity of 3.05 to 3.18 and a coefficient of thermal conductivity of at least 230 W/mK, comprising adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture; forming the mixture by cast forming or pressure forming to obtain a formed product; treating the formed product with heat at 2,100째 C. to 2,500째 C. for 1 to 5 hours to obtain a base material; and impregnating the base material with an organic resin; drying the base material with heat; and impregnating the base material with metal silicon at 1,400째 C. to 1,800째 C. under reduced pressure , wherein the silicon carbide powder comprises 30-60 wt % of coarse particles with an average particle size of 50-150 μm, 1-5 wt % of medium particles with an average particle size of 5-50 μm, 1-5 wt % of medium particles with an average particle size of 1-10 μm, and 30-60 wt % of fine particles with an average particle size of 0.1-5 μm. 20. The process for producing a high thermal conductive material according to claim 9, wherein the silicon carbide powder comprises 30-60 wt % of coarse particles with an average particle size of 50-150 μm, 1-5 wt % of medium particles with an average particle size of 5-50 μm, 1-5 wt % of medium particles with an average particle size of 1-10 μm, and 30-60 wt % of fine particles with an average particle size of 0.1-5 μm.