초록 ▼

Disclosed is a semiconductor fin construction useful in FinFET devices that incorporates an upper region and a lower region with wherein the upper region is formed with substantially vertical sidewalls and the lower region is formed with inclined sidewalls to produce a wider base portion. The disclo

Disclosed is a semiconductor fin construction useful in FinFET devices that incorporates an upper region and a lower region with wherein the upper region is formed with substantially vertical sidewalls and the lower region is formed with inclined sidewalls to produce a wider base portion. The disclosed semiconductor fin construction will also typically include a horizontal step region at the interface between the upper region and the lower region. Also disclosed are a series of methods of manufacturing semiconductor devices incorporating semiconductor fins having this dual construction and incorporating various combinations of insulating materials such as silicon dioxide and/or silicon nitride for forming shallow trench isolation (STI) structures between adjacent semiconductor fins.

대표청구항 ▼

What is claimed is: 1. A semiconductor device comprising: a substrate; a semiconductor fin extending generally upwardly from the substrate, wherein the semiconductor fin includes; an upper portion, the upper portion having a first thickness t1 and a substantially constant width w0; and a lower port

What is claimed is: 1. A semiconductor device comprising: a substrate; a semiconductor fin extending generally upwardly from the substrate, wherein the semiconductor fin includes; an upper portion, the upper portion having a first thickness t1 and a substantially constant width w0; and a lower portion arranged between the upper portion and the substrate, the lower portion having a second thickness t2, a top width w1 adjacent the upper portion and a bottom width w 2, wherein w1<w2; and a gate electrode separated from the semiconductor fin by a dielectric material. 2. The semiconductor device according to claims 1, wherein: the gate electrode is separated from the upper portion of the semiconductor fin by a gate dielectric. 3. A semiconductor device according to claim 1, wherein: the width of the upper portion of the silicon fin and the top width of the lower portion of the silicon fin satisfy the equation w 0=w1. 4. A semiconductor device according to claim 1, wherein: the upper portion has substantially vertical sidewalls; and the lower portion has inclined sidewalls. 5. A semiconductor device according to claim 4, wherein: the sidewalls of the lower portion are inclined at least 3 degrees, but no more than 10 degrees, from vertical relative to a plane defined by a major surface of the substrate. 6. A semiconductor device according to claim 1, wherein: the width of the upper portion of the semiconductor fin and the top width of the lower portion of the silicon fin satisfy the relationship w0<w1; the first thickness and the second thickness satisfy the relationship t1≦t2; and the semiconductor is silicon. 7. A semiconductor device according to claim 6, wherein: step regions are formed at the junction of the upper portion and the lower portion of the silicon fin, the step regions having a substantially horizontal surface and a width of about (w1-w 0)/2. 8. A semiconductor device according to claim 6, wherein: the upper portion includes epitaxial silicon having a first doping profile; and the lower portion includes silicon having a second doping profile, wherein the first and second doping profiles are not substantially identical. 9. A semiconductor device according to claim 6, wherein: the upper portion includes a surface region and an interior region, the surface region having a first dopant concentration and the interior region having a second dopant concentration, the second dopant concentration being lower than the first dopant concentration. 10. A semiconductor device according to claim 6, wherein: the semiconductor fin is characterized by an aspect ratio, the aspect ratio being defined by the relationship 2(t1+t 2)/(w2+w1), and further wherein the aspect ratio is between about 3:1 and about 10:1.