초록 ▼

A method of patterning a layer of high-k dielectric material is provided, which may be used in the fabrication of a semiconductor device. A first etch is performed on the high-k dielectric layer. A portion of the high-k dielectric layer being etched with the first etch remains after the first etch.

A method of patterning a layer of high-k dielectric material is provided, which may be used in the fabrication of a semiconductor device. A first etch is performed on the high-k dielectric layer. A portion of the high-k dielectric layer being etched with the first etch remains after the first etch. A second etch of the high-k dielectric layer is performed to remove the remaining portion of the high-k dielectric layer. The second etch differs from the first etch. Preferably, the first etch is a dry etch process, and the second etch is a wet etch process. This method further includes a process of plasma ashing the remaining portion of the high-k dielectric layer after the first etch and before the second etch.

대표청구항 ▼

What is claimed is: 1. A method of fabricating a semiconductor device, comprising: providing a layer of high-k dielectric material over a substrate; providing a layer of conductive material over the high-k dielectric layer; patterning the conductive layer; performing a first etch on the high-k diel

What is claimed is: 1. A method of fabricating a semiconductor device, comprising: providing a layer of high-k dielectric material over a substrate; providing a layer of conductive material over the high-k dielectric layer; patterning the conductive layer; performing a first etch on the high-k dielectric layer, wherein a portion of the high-k dielectric layer being etched with the first etch remains after the first etch; plasma ashing a first part of the remaining portion of the high-k dielectric layer; and performing a second etch of the high-k dielectric layer to remove a second part of the remaining portion of the high-k dielectric layer, wherein the second etch differs from the first etch, and wherein the plasma ashing is performed after the first etch and before the second etch. 2. The method of claim 1, wherein the first and second etches of the high-k dielectric layer are performed in alignment with the patterned conductive layer. 3. The method of claim 1, wherein the first etch is a dry etch process. 4. The method of claim 1, wherein the second etch is a wet etch process. 5. The method of claim 1, wherein the patterning of the conductive layer, the first etch, and the second etch are performed in a same chamber. 6. The method of claim 1, wherein the patterning of the conductive layer, the first etch, the plasma ashing, and the second etch are performed in a same chamber. 7. The method of claim 1, wherein a second polymer residue is formed after the second etch and as a result of the second etch, and after the second etch, further comprising plasma ashing the second polymer residue to remove at least pad of the second polymer residue. 8. The method of claim 1, further comprising: changing material properties of the remaining portion of the high-k dielectric layer during the first etch. 9. The method of claim 1, wherein a polymer residue is formed on the high-k dielectric layer after the first etch, and wherein the plasma ashing removes at least part of the polymer residue. 10. A method of fabricating a semiconductor device, comprising: providing a layer of high-k dielectric material over a substrate; providing a layer of conductive material over the high-k dielectric layer; patterning the conductive layer; performing a first etch on the high-k dielectric layer, wherein a portion of the high-k dielectric layer being etched with the first etch remains after the first etch, and wherein a first polymer residue is formed on the remaining portion of the high-k dielectric layer after the first etch; plasma ashing to remove at least part of the first polymer residue from the remaining portion of the high-k dielectric layer; and performing a second etch of the high-k dielectric layer to remove at least part of the remaining portion of the high-k dielectric layer, wherein the second etch differs from the first etch, and wherein the plasma ashing is performed after the first etch and before the second etch. 11. The method of claim 10, wherein the first and second etches of the high-k dielectric layer are performed in alignment with the patterned conductive layer. 12. The method of claim 10, wherein the first etch is a dry etch process. 13. The method of claim 10, wherein the second etch is a wet etch process. 14. The method of claim 10, wherein the patterning of the conductive layer, the first etch, the plasma ashing, and the second etch are performed in a same chamber. 15. The method of claim 10, wherein the patterning of the conductive layer, the first etch, and the second etch are performed in a same chamber. 16. The method of claim 10, wherein a second polymer residue is formed after the second etch, and further comprising plasma ashing to remove at least part of the second polymer residue. 17. A method of fabricating a semiconductor device, comprising: providing a layer of high-k dielectric material over a substrate; providing a layer of conductive material over the high-k dielectric layer; patterning the conductive layer; performing a first etch on the high-k dielectric layer, wherein a portion of the high-k dielectric layer being etched with the first etch remains after the first etch; performing a second etch of the high-k dielectric layer to remove at least part of the remaining portion of the high-k dielectric layer, wherein the second etch differs from the first etch, and wherein a polymer residue is formed after the second etch; and plasma ashing to remove at least part of the polymer residue. 18. The method of claim 17, wherein the first and second etches of the high-k dielectric layer are performed in alignment with the patterned conductive layer. 19. The method of claim 17, wherein the first etch is a dry etch process. 20. The method of claim 17, wherein the patterning of the conductive layer, the first etch, the second etch, and the plasma ashing are performed in a same chamber.