초록 ▼

A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate,

A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

대표청구항 ▼

What is claimed is: 1. A method for separating a semiconductor layer from a substrate, comprising: forming a porous layer on a surface of a substrate by an anodic oxidization; forming at least one semiconductor layer on said porous layer; and separating said semiconductor layer from said substrate

What is claimed is: 1. A method for separating a semiconductor layer from a substrate, comprising: forming a porous layer on a surface of a substrate by an anodic oxidization; forming at least one semiconductor layer on said porous layer; and separating said semiconductor layer from said substrate by forming a mechanical rupture in said porous layer. 2. A method for separating a semiconductor layer from a substrate according to claim 1, wherein said substrate is a Si substrate. 3. A method for separating a semiconductor layer from a substrate according to claim 1, wherein said porous layer is a Si porous layer. 4. A method for separating a semiconductor layer from a substrate according to claim 1, wherein the method further comprises a step of oxidizing said porous layer after forming said porous layer. 5. A method for separating a semiconductor layer from a substrate according to claim 4, wherein said porous layer is oxidized at a temperature of 400째. 6. A method for separating a semiconductor layer from a substrate comprising: forming a porous layer on a surface of a substrate; oxidizing said porous layer; forming at least one semiconductor layer on said porous layer; separating said semiconductor layer from said substrate by forming a mechanical rupture within said porous layer. 7. The method for separating a semiconductor layer from a substrate according to claim 1 or 6 wherein the method further comprises slightly etching an end face of the porous layer to facilitate the subsequent separation of the semiconductor layer from the substrate. 8. A method according to claim 1, wherein said at least one semiconductor layer is formed by epitaxial growth using Chemical Vapor Deposition.