초록 ▼

In a method of affecting cleaning or chamber process control to remove residues of fluorinated discharges from internal PECVD chamber hardware during manufacture of a semiconductor or integrated circuit, the improvement of removing the fluorinated discharges without opening the chamber and without c

In a method of affecting cleaning or chamber process control to remove residues of fluorinated discharges from internal PECVD chamber hardware during manufacture of a semiconductor or integrated circuit, the improvement of removing the fluorinated discharges without opening the chamber and without causing chamber downtime, comprising: a) maximizing H-atom concentration in a gas mix of a plasma containing H2 through the use of high rf power and low pressure to obtain an in-situ H2 plasma; and b) subjecting a reactor chamber containing build-up residues from previous chamber treatment with a fluorinated plasma, with the in-situ H2 plasma from step a) without opening the chamber and without shutting down the chamber to remove the build-up residues of the fluorinated plasma.

대표청구항 ▼

We claim: 1. In a method of affecting cleaning to remove AlF3 residue from walls of a reactor chamber, the method comprising the steps of: a) identifying cleaning process conditions of plasma containing H2-gases that maximize H-atom concentration in said plasma of a gas mixture containing H2and Ar

We claim: 1. In a method of affecting cleaning to remove AlF3 residue from walls of a reactor chamber, the method comprising the steps of: a) identifying cleaning process conditions of plasma containing H2-gases that maximize H-atom concentration in said plasma of a gas mixture containing H2and Ar using optical emission spectroscopy or actinometry to identify the H atom concentration in the plasma based on the relative emission intensity from excited H and Ar atoms by the formula: said cleaning process conditions including one or more of flow rate, pressure, and RF power; b) subjecting said reactor chamber in situ to a gas mixture of He/H2 far striking a plasma then subjecting said reactor chamber in situ to H2 gas according to the cleaning process conditions identified in step a) without opening said chamber and without shutting down said chamber to affect reduction and removal of said AlF3 residue.