Metal back-carrying fluorescent surface, metal back forming transfer film and image display unit
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0483556
(2002-07-12)
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우선권정보 |
JP-2001-214338(2001-07-13) |
국제출원번호 |
PCT/JP02/007084
(2002-07-12)
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§371/§102 date |
20040113
(20040113)
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국제공개번호 |
WO03/007324
(2003-01-23)
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발명자
/ 주소 |
- Ito,Takeo
- Tanaka,Hajime
- Nakazawa,Tomoko
- Inamura,Masaaki
- Nakayama,Taichiro
- Shinohara,Takaaki
- Nakayama,Yoichiro
- Sakai,Kazuo
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출원인 / 주소 |
- Kabushiki Kaisha Toshiba
- Nikka Techno, Inc.
- Fuji Pigment Co., Ltd.
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대리인 / 주소 |
Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
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인용정보 |
피인용 횟수 :
1 인용 특허 :
4 |
초록
▼
A metal back-attached phosphor screen comprises a metal back layer that has a high-reflectance, high-resistance layer consisting of an In-, Sn-or Bi-oxide layer. The metal back layer of the metal back-attached phosphor screen may have a laminate structure including a high-reflectance layer formed on
A metal back-attached phosphor screen comprises a metal back layer that has a high-reflectance, high-resistance layer consisting of an In-, Sn-or Bi-oxide layer. The metal back layer of the metal back-attached phosphor screen may have a laminate structure including a high-reflectance layer formed on a phosphor layer side and a high-resistance layer formed on that layer. The high-reflectance layer may be formed of Al, In, Sn or Bi. The high-resistance layer may be formed of an Al-, In-, Sn-, Bi-or Si-oxide or nitride. A high-brightness metal back-attached phosphor screen is provided that prevents the destruction or the deterioration of an electron emission element and a phosphor screen by discharging.
대표청구항
▼
What is claimed is: 1. A metal back-attached phosphor screen, comprising: a phosphor layer formed on the inner surface of a face plate; and a metal back layer formed on the phosphor layer, wherein the metal back layer has a reflectance layer which has a light reflectance and a resistance layer whic
What is claimed is: 1. A metal back-attached phosphor screen, comprising: a phosphor layer formed on the inner surface of a face plate; and a metal back layer formed on the phosphor layer, wherein the metal back layer has a reflectance layer which has a light reflectance and a resistance layer which has electric resistivity, the reflectance layer being formed on the phosphor layer side and the resistance layer being formed on the top layer of the reflectance layer, and the metal back layer has a baking resistant layer comprised of Si-oxide between the reflectance layer and the resistance layer. 2. The metal back-attached phosphor screen according to claim 1, wherein the reflectance layer is comprised of at least one metal selected from the group consisting of Al, In, Sn and Bi. 3. The metal back-attached phosphor screen according to claim 1, wherein the resistance layer is comprised of oxide or nitride of at least one element selected from the groups consisting of Al, In, Sn, Bi and Si. 4. The metal back-attached phosphor screen according to claim 1, wherein the reflectance layer is comprised of at least one metal selected from the group consisting of Al, In, Sn and Bi; and the resistance layer is comprised of oxide or nitride of at least one element selected from the groups consisting of Al, In, Sn, Bi and Si. 5. The metal back-attached phosphor screen according to claim 1, wherein the metal back layer comprises an oxide of at least one metal selected from the group consisting of In, Sn and Bi. 6. A transfer film for forming a metal back, comprising: a base film; a parting agent layer which is formed on the base film; a resistance layer which is formed over the parting agent layer and has electric resistivity; a reflectance layer which is formed on the resistance layer and has a light reflectance; an adhesive agent layer which is formed on the reflectance layer; and a Si-oxide layer which is formed between the resistance layer and the reflectance layer. 7. The transfer film for forming a metal back according to claim 6, wherein the resistance layer is comprised of oxide or nitride of at least one element selected from the group consisting of Al, In, Sn, Bi and Si. 8. The transfer film for forming a metal back according to claim 6, wherein the high-reflectance layer is comprised of at least one type of metal selected from Al, In, Sn and Bi. 9. The transfer film for forming a metal back according to claim 6, further comprising a protective film which is formed on the parting agent layer.
이 특허에 인용된 특허 (4)
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Nguyen Khanh B. ; Sander Craig, Backside polish EUV mask and method of manufacture.
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Porter, John D.; Pearson, Roger A.; Kajiwara, Kazuo; Kato, Haruo; Pan, Lawrence S.; Pei, Shiyou; Fahlen, Theodore S., Light-emitting device having light-emissive particles partially coated with light-reflective or/and getter material.
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Nishimura Yutaka (Kadoma JPX) Tsukamoto Masahide (Nara JPX) Watanabe Hirotoshi (Osaka JPX) Matsuo Kohji (Neyagawa JPX) Aikawa Noboru (Ibaraki JPX), Method of forming a metal-backed layer and a method of forming an anode.
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Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
이 특허를 인용한 특허 (1)
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Kato,Yoshimitsu; Okanan,Satoshi; Honda,Keiji; Kokubukata,Masaru; Sata,Hiroshi, Flat display device.
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