A chemical reaction apparatus includes at least one reaction region formed on a solid body and having a continuously formed reaction flow path to which a fluid material is supplied, and a temperature adjusting layer which is provided on the body to correspond to a region including the reaction flow
A chemical reaction apparatus includes at least one reaction region formed on a solid body and having a continuously formed reaction flow path to which a fluid material is supplied, and a temperature adjusting layer which is provided on the body to correspond to a region including the reaction flow path and portions between adjacent portions of the reaction flow path. The temperature adjusting layer supplies a predetermined heat quantity to the reaction flow path.
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What is claimed is: 1. A chemical reaction apparatus comprising: at least one reaction region formed on a solid body and including a continuously formed reaction flow path to which a fluid material is supplied; and a temperature adjusting layer which is provided on the solid body and has a planar s
What is claimed is: 1. A chemical reaction apparatus comprising: at least one reaction region formed on a solid body and including a continuously formed reaction flow path to which a fluid material is supplied; and a temperature adjusting layer which is provided on the solid body and has a planar shape covering an entire formation region of the reaction flow path, and which supplies a predetermined heat quantity to the reaction flow path. 2. An apparatus according to claim 1, wherein the body comprises a plurality of substrates, and at least one substrate of the plurality of substrates in which the reaction flow path is formed is a silicon substrate. 3. An apparatus according to claim 1, wherein the temperature adjusting layer comprises a heating resistor. 4. An apparatus according to claim 3, wherein the heating resistor is a thin-film layer of a compound containing tantalum (Ta), silicon (Si), oxygen (O), and nitrogen (N). 5. An apparatus according to claim 4, wherein a total content of oxygen and nitrogen in the compound is set at not more than 56%. 6. An apparatus according to claim 5, wherein the total content of oxygen and nitrogen in the compound is set at 35% to 56%. 7. An apparatus according to claim 4, wherein a sheet resistance of the thin-film layer is set at 10 to 100 Ω/□. 8. An apparatus according to claim 4, wherein a resistivity of the compound is set at 0.5 to 10 mΩ·cm. 9. An apparatus according to claim 4, wherein a density of the compound is set at not less than 7.0×1022/cm3. 10. An apparatus according to claim 3, further comprising: a power supply unit which supplies electric power to the heating resistor; and a measuring unit which measures an electrical resistance of the heating resistor by measuring at least one of an electric current flowing through the heating resistor and a voltage applied to the heating resistor by the electric power supplied from the power supply unit to the heating resistor. 11. An apparatus according to claim 10, further comprising temperature detecting means for detecting a temperature of the heating resistor on the basis of the electrical resistance of the heating resistor measured by the measuring unit. 12. An apparatus according to claim 11, further comprising control means for controlling the electric power supplied from the power supply unit to the heating resistor on the basis of the temperature of the heating resistor detected by the temperature detecting means. 13. An apparatus according to claim 11, wherein when the temperature of the heating resistor rises 100° C., a change in the electrical resistance of the heating resistor is one of:-2% to-7%, and not less than 3%. 14. An apparatus according to claim 1, wherein the reaction flow path comprises a micron-order, micropatterned flow path. 15. An apparatus according to claim 1, wherein a plurality of reaction regions which cause chemical reactions different from each other are formed on the solid body. 16. An apparatus according to claim 1, wherein the reaction flow path is formed into a trench which is open at one surface of the body, and the temperature adjusting layer is provided to cover the formation region of the reaction flow path and close the open trench of the reaction flow path at said one surface of the body. 17. An apparatus according to claim 16, wherein the body comprises a plurality of substrates, the reaction flow path is formed in one surface of a first substrate of the plurality of substrates, the temperature adjusting layer is formed on one surface of a second substrate of the plurality of substrates, and said one surface of the first substrate and said one surface of the second substrate are opposed and bonded to each other. 18. An apparatus according to claim 1, wherein the body comprises a plurality of substrates, the reaction flow path is formed into a trench in one surface of a first substrate of the plurality of substrates, the temperature adjusting layer is formed in one surface of a second substrate of the plurality of substrates to correspond to the formation region of the reaction flow path, and said one surface of the first substrate and said one surface of the second substrate are opposed and bonded to each other. 19. An apparatus according to claim 1, further comprising a vaporizer which vaporizes the fluid material in the reaction flow path by heating an interior of the reaction flow path by the heat quantity supplied from the temperature adjusting layer. 20. An apparatus according to claim 1, further comprising a catalyst layer including a catalyst which is provided in at least a portion of the reaction flow path. 21. An apparatus according to claim 20, wherein the catalyst is a reforming catalyst, and the chemical reaction apparatus further comprises a reforming unit which produces hydrogen from the fluid material in the reaction flow path by causing a reforming reaction on the fluid material supplied to the reaction flow path by heating an interior of the reaction flow path by the heat quantity supplied from the temperature adjusting layer. 22. An apparatus according to claim 21, wherein the chemical reaction apparatus uses an aqueous solution of methanol as the fluid material. 23. An apparatus according to claim 20, wherein the reaction catalyst is a selective oxidation catalyst, and the chemical reaction apparatus further comprises a converting unit which converts carbon monoxide in the fluid material supplied to the reaction flow path into carbon dioxide and hydrogen in the reaction flow path, by heating an interior of the reaction flow path by the heat quantity supplied from the temperature adjusting layer. 24. An apparatus according to claim 23, wherein the chemical reaction apparatus uses a gas mixture of hydrogen and carbon monoxide as the fluid material. 25. A power supply system comprising: a chemical reaction apparatus which comprises: at least one reaction region formed on a solid body and including a continuously formed reaction flow path to which a first fluid material is supplied and in which a chemical reaction for converting the first fluid material into a second fluid material is performed; a temperature adjusting layer which is formed on the solid body and has a planar shape covering an entire formation region of the reaction flow path, and which supplies a heat quantity for performing the chemical reaction to the reaction flow path; and a producing unit which produces hydrogen as the second fluid material by the chemical reaction; and a fuel cell for generating electric power by causing the hydrogen produced by the chemical reaction apparatus to react with oxygen. 26. A system according to claim 25, wherein the body comprises a plurality of substrates, and at least one substrate of the plurality of substrates in which the reaction flow path is formed is a silicon substrate. 27. A system according to claim 25, wherein the temperature adjusting layer of the chemical reaction apparatus comprises a heating resistor. 28. A system according to claim 27, wherein the heating resistor is a thin-film layer of a compound containing tantalum (Ta), silicon (Si), oxygen (O), and nitrogen (N). 29. A system according to claim 28, wherein a total content of oxygen and nitrogen in the compound is set at not more than 56%. 30. A system according to claim 28, wherein a total content of oxygen and nitrogen in the compound is set at 35% to 56%. 31. A system according to claim 28, wherein a sheet resistance of the thin-film layer is set at 10 to 100 10 to 100 Ω /□. 32. A system according to claim 28, wherein a resistivity of the compound is set at 0.5 to 10 mΩ·cm. 33. A system according to claim 28, wherein a density of the compound is set at not less than 7.0×1022/cm3. 34. A system according to claim 27, wherein the chemical reaction apparatus further comprises: a power supply unit which supplies electric power to the heating resistor; and a measuring unit which measures an electrical resistance of the heating resistor by measuring at least one of an electric current flowing through the heating resistor and a voltage applied to the heating resistor by the electric power supplied from the power supply unit to the heating resistor. 35. A system according to claim 34, wherein the chemical reaction apparatus further comprises temperature detecting means for detecting a temperature of the heating resistor on the basis of the electrical resistance of the heating resistor measured by the measuring unit. 36. A system according to claim 35, wherein the chemical reaction apparatus further comprises control means for controlling the electric power supplied from the power supply unit to the heating resistor on the basis of the temperature of the heating resistor detected by the temperature detecting means. 37. A system according to claim 35, wherein when the temperature of the heating resistor rises 100° C., a change in the electrical resistance of the heating resistor is one of:-2% to-7%, and not less than 3%. 38. A system according to claim 25, wherein the reaction flow path of the chemical reaction apparatus comprises a micron-order, micropatterned flow path. 39. A system according to claim 25, wherein a plurality of reaction regions which cause chemical reactions different from each other are formed on the solid body in the chemical reaction apparatus. 40. A system according to claim 25, wherein in the chemical reaction apparatus, the reaction flow path is formed into a trench which is open at one surface of the body, and the temperature adjusting layer is formed to cover the formation region of the reaction flow path and close the open trench of the reaction flow path at said one surface of the body. 41. A system according to claim 40, wherein in the chemical reaction apparatus, the body comprises a plurality of substrates, the reaction flow path is formed in one surface of a first substrate of the plurality of substrates, the temperature adjusting layer is formed on one surface of a second substrate of the plurality of substrates, and said one surface of the first substrate and said one surface of the second substrate are opposed and bonded to each other. 42. A system according to claim 25, wherein in the chemical reaction apparatus, the body comprises a plurality of substrates, the reaction flow path is formed into a trench in one surface of a first substrate of the plurality of substrates, the temperature adjusting layer is formed in one surface of a second substrate of the plurality of substrates to correspond to the formation region of the reaction flow path, and said one surface of the first substrate and said one surface of the second substrate are opposed and bonded to each other. 43. A system according to claim 25, wherein the chemical reaction apparatus further comprises a vaporizer which vaporizes the fluid material in the reaction flow path by heating an interior of the reaction flow path by the heat quantity supplied from the temperature adjusting layer. 44. A system according to claim 25, wherein a catalyst layer including a catalyst is formed in at least a portion of the reaction flow path. 45. A system according to claim 44, wherein the catalyst is a reforming catalyst, and the chemical reaction apparatus further comprises a reforming unit which produces hydrogen from the fluid material in the reaction flow path by causing a reforming reaction on the fluid material supplied to the reaction flow path by heating an interior of the reaction flow path by the heat quantity supplied from the temperature adjusting layer. 46. A system according to claim 45, wherein the chemical reaction apparatus uses an aqueous solution of methanol as the fluid material. 47. A system according to claim 44, wherein the reaction catalyst is a selective oxidation catalyst, and the chemical reaction apparatus further comprises a converting unit which converts carbon monoxide in the fluid material supplied to the reaction flow path into carbon dioxide and hydrogen in the reaction flow path, by heating an interior of the reaction flow path by the heat quantity supplied from the temperature adjusting layer. 48. A system according to claim 47, wherein the chemical reaction apparatus uses a gas mixture of hydrogen and carbon monoxide as the fluid material.
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이 특허에 인용된 특허 (6)
Morse, Jeffrey D.; Jankowski, Alan, Chemical microreactor and method thereof.
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