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Apparatus for providing gas to a processing chamber 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • A01G-013/06
  • B01D-007/00
  • C23C-014/00
  • F24F-003/14
  • F24F-003/12
  • A61M-016/00
출원번호 US-0198727 (2002-07-17)
발명자 / 주소
  • Ganguli,Seshadri
  • Chen,Ling
  • Ku,Vincent W.
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Patterson & Sheridan LLP
인용정보 피인용 횟수 : 72  인용 특허 : 14

초록

초록이 없습니다.

대표청구항

대표청구항이 없습니다.

이 특허에 인용된 특허 (14)

  1. Lin Wei-Farn,TWX ; Hung Cheng-Chang,TWX, Ammonium chloride vaporizer cold trap.
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  2. Lei, Lawrence C., Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition.
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  3. LaRiviere Christopher J., Apparatus for fluffing and contacting high consistancy wood pulp with a gaseous bleaching reagent.
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  4. Foley, Peter F.; Geschwindt, James R.; Unkert, William T.; Vincitore, Antonio M., Compact precooler and cooling process.
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  5. Rodiger Klaus,DEX ; Westphal Hartmut,DEX ; Dreyer Klaus,DEX ; Gerdes Thorsten,DEX ; Willert-Porada Monika,DEX, Composite body comprising a hard metal, cermet or ceramic substrate body and method of producing same.
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  6. Stringer, Steven K.; Hultquist, Kevin L.; Farhangnia, Mehrdad; Brian, III, Ben F.; Linker, Fred I.; Culp, James M.; Dueri, Jean-Pierre; Afzal, Thomas A., Integrated blood handling system having active gas removal system and methods of use.
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  7. Krafft Terry (Longmont CO), Method and apparatus for delivering gas.
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  8. Sandhu Gurtej S. (Boise ID) Meikle Scott G. (Boise ID) Westmoreland Donald L. (Boise ID), Method and appartus for subliming precursors.
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  9. Moore Gary M. ; Nishikawa Katsuhito, Method for controlling a gas injector in a semiconductor processing reactor.
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  10. Esrom Hilmar (Edingen-Neckarhausen DEX), Method for forming layers by UV radiation of aluminum nitride.
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  11. Lilja Launo L. (Pori FIX) Mkitalo Valto J. (Pori FIX) Hultholm Stig-Erik (Pori FIX) Nyman Bror G. (Ulvila FIX), Method for mixing liquid, solids and gas and for simultaneously separating gas or gas and solids from the liquid.
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  12. Felts John T., Multiple source deposition plasma apparatus.
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  13. Diem Michael (Orange CA) Fisk Michael A. (Anaheim CA) Goldman Jon C. (Orange CA), Process and apparatus for low pressure chemical vapor deposition of refractory metal.
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  14. Atwell David R. (Boise ID) Westmoreland Donald L. (Boise ID), Vapor delivery system for solid precursors and method regarding same.
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이 특허를 인용한 특허 (72)

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  3. Chen,Ling; Ku,Vincent W.; Chang,Mei; Wu,Dien Yeh; Chung,Hua, Apparatus and method for hybrid chemical processing.
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  4. Salinas, Martin Jeff; Dong, Youqun; Thompson, David; Chang, Mei, Apparatus and method for self-regulating fluid chemical delivery.
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  5. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
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  6. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
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  7. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
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  8. Chen, Ling; Ku, Vincent W.; Chang, Mei; Wu, Dien Yeh; Chung, Hua, Apparatus for hybrid chemical processing.
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  9. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Apparatus for integration of barrier layer and seed layer.
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  10. Myo, Nyi Oo; Choi, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Apparatuses for atomic layer deposition.
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  11. Chung, Hua; Wang, Rongjun; Maity, Nirmalya, Atomic layer deposition of barrier materials.
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  12. Cunning, Hugh; Williams, Graham; Odedra, Rajesh; Kanjolia, Ravi, Bubbler for the transportation of substances by a carrier gas.
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  13. Nakashima, Norman; Marcadal, Christophe; Ganguli, Seshadri; Ma, Paul; Chu, Schubert S., Chemical delivery apparatus for CVD or ALD.
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  14. Nakashima, Norman; Marcadal, Christophe; Ganguli, Seshadri; Ma, Paul; Chu, Schubert S., Chemical delivery apparatus for CVD or ALD.
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  15. Nakashima, Norman; Marcadal, Christophe; Ganguli, Seshadri; Ma, Paul; Chu, Schubert S., Chemical delivery apparatus for CVD or ALD.
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  16. Cuvalci, Olkan; Wu, Dien-Yeh; Yuan, Xiaoxiong, Chemical precursor ampoule for vapor deposition processes.
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  17. Dimeo, Frank; Dietz, James; Olander, W. Karl; Kaim, Robert; Bishop, Steven; Neuner, Jeffrey W.; Arno, Jose; Marganski, Paul J.; Sweeney, Joseph D.; Eldridge, David; Yedave, Sharad; Byl, Oleg; Stauf, Gregory T., Cleaning of semiconductor processing systems.
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  18. Nguyen, Son T.; Sangam, Kedarnath; Schwartz, Miriam; Choi, Kenric; Bhat, Sanjay; Narwankar, Pravin K.; Kher, Shreyas; Sharangapani, Rahul; Muthukrishnan, Shankar; Deaton, Paul, Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system.
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  19. Chung, Hua; Chen, Ling; Chin, Barry L., Cyclical deposition of refractory metal silicon nitride.
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  20. Oosterlaken, Theodorus G. M., Delivery of vapor precursor from solid source.
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  21. Yoon, Ki Hwan; Cha, Yonghwa Chris; Yu, Sang Ho; Ahmad, Hafiz Farooq; Wee, Ho Sun, Deposition methods for barrier and tungsten materials.
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  22. Lee, Wei Ti; Wang, Yen-Chih; Hassan, Mohd Fadzli Anwar; Kim, Ryeun Kwan; Park, Hyung Chul; Guo, Ted; Ritchie, Alan A., Deposition processes for titanium nitride barrier and aluminum.
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  23. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
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  26. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.
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  27. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus for atomic layer deposition.
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  28. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman; Chang, Mei, Gas delivery apparatus for atomic layer deposition.
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  29. Owa, Michiaki, Heating control device and heating control method.
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  30. Ma, Paul F.; Aubuchon, Joseph F.; Chang, Mei; Kim, Steven H.; Wu, Dien-Yeh; Nakashima, Norman M.; Johnson, Mark; Palakodeti, Roja, In-situ chamber treatment and deposition process.
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  31. Sweeney, Joseph D.; Yedave, Sharad N.; Byl, Oleg; Kaim, Robert; Eldridge, David; Feng, Lin; Bishop, Steven E.; Olander, W. Karl; Tang, Ying, Ion source cleaning in semiconductor processing systems.
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  33. Chen, Ling; Ku, Vincent W.; Chung, Hua; Marcadal, Christophe; Ganguli, Seshadri; Lin, Jenny; Wu, Dien Yeh; Ouye, Alan; Chang, Mei, Method and apparatus for generating a precursor for a semiconductor processing system.
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  34. Chen, Ling; Ku, Vincent W.; Chung, Hua; Marcadal, Christophe; Ganguli, Seshadri; Lin, Jenny; Wu, Dien-Yeh; Ouye, Alan; Chang, Mei, Method and apparatus for generating a precursor for a semiconductor processing system.
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  35. Ganguli, Seshadri; Chen, Ling; Ku, Vincent W., Method and apparatus for providing precursor gas to a processing chamber.
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  36. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi, Method and apparatus to help promote contact of gas with vaporized material.
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  37. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
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  38. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
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  39. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
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  40. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
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  41. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
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  42. Tuominen, Marko; Shero, Eric; Verghese, Mohith, Method for controlling the sublimation of reactants.
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  43. Xi, Ming; Sinha, Ashok; Kori, Moris; Mak, Alfred W.; Lu, Xinliang; Lai, Ken Kaung; Littau, Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
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  44. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
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  45. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method for forming tungsten materials during vapor deposition processes.
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  46. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Method for forming tungsten materials during vapor deposition processes.
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  47. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
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  48. Ma, Paul; Aubuchon, Joseph F.; Lu, Jiang; Chang, Mei, Method for tuning a deposition rate during an atomic layer deposition process.
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  49. Jan Snijders, Gert; Raaijmakers, Ivo, Method for vaporizing non-gaseous precursor in a fluidized bed.
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  50. Myo, Nyi Oo; Cho, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Methods for atomic layer deposition of hafnium-containing high-K dielectric materials.
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  51. Byun, Jeong Soo, Methods for depositing tungsten after surface treatment.
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