이 특허에 인용된 특허 (216) 인용/피인용 타임라인 분석

1. Gurtej Sandhu ; Garo J. Derderian, ALD method to improve surface coverage.

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2. Shankar N. Chandran ; Scott Hendrickson ; Gwendolyn D. Jones ; Shankar Venkataraman ; Ellie Yieh, Accelerated plasma clean.

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3. Chiang, Tony P.; Leeser, Karl F.; Brown, Jeffrey A.; Babcoke, Jason E., Adsorption process for atomic layer deposition.

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4. Nagakura, Yutaka, Air-tight vessel equipped with gas feeder uniformly supplying gaseous component around plural wafers.

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5. Ofer Sneh ; Carl J. Galewski, Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition.

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6. Sneh Ofer ; Galewski Carl J., Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition.

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7. Sneh, Ofer; Galewski, Carl J., Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition.

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8. Cozad Bradford Allen, Apparatus and method for controlling fluid in a micromachined boiler.

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9. Harris James M. ; Taheri Babak ; Arkilic Errol, Apparatus and method for correcting drift in a sensor.

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10. Carpenter, Craig M.; Mardian, Allen P.; Dando, Ross S.; Tschepen, Kimberly R.; Derderian, Garo J., Apparatus and method for depositing materials onto microelectronic workpieces.

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11. Park, Young-Hoon, Apparatus and method for depositing thin film on wafer using atomic layer deposition.

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12. Park, Young-Hoon, Apparatus and method for depositing thin film on wafer using atomic layer deposition.

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13. Donohoe Kevin G., Apparatus and method for improving uniformity in batch processing of semiconductor wafers.

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14. Selser Michael J. ; Arkilic Errol B. ; Taheri Babak A., Apparatus and method for mounting micromechanical fluid control components.

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15. Heng-Yi Tseng TW; Guey-Shyung Cho TW, Apparatus and method for positioning gas injectors in a vertical furnace.

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16. Kopacz Stanislaw ; Webb Douglas Arthur ; Leusink Gerrit Jan ; LeBlanc Rene Emile ; Ameen Michael S. ; Hillman Joseph Todd ; Foster Robert F. ; Rowan ; Jr. Robert Clark, Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions.

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17. Ihantola Heikki,FIX, Apparatus and method for processing of semiconductors, such as silicon chips.

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18. Sneh, Ofer; Seidel, Thomas E.; Galewski, Carl, Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition.

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19. Philip H. Campbell ; David J. Kubista, Apparatus and process of improving atomic layer deposition chamber performance.

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20. Takahashi Tetsuo (Akita JPX) Miyauchi Eisaku (Akita JPX) Miyajima Toshihiko (Saku JPX) Watanabe Hideaki (Akita JPX), Apparatus for clean transfer of objects.

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21. Bondestam, Niklas; Kesala , Janne; Keto, Leif; Soininen, Pekka T., Apparatus for fabrication of thin films.

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22. Bondestam, Niklas; Kesala, Janne; Keto, Leif; Soininen, Pekka T., Apparatus for fabrication of thin films.

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23. Suzuki Nobumasa (Yokohama JPX) Hayashi Senichi (Hiratsuka JPX), Apparatus for forming deposited film including light transmissive diffusion plate.

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24. Kaneko Satoshi (Yokohama JPX) Fugita Taichi (Yamato JPX) Nozawa Toshihisa (Yokohama JPX) Ueda Yoichi (Yokohama JPX) Yoshida Yukimasa (Yokohama JPX) Hasegawa Isahiro (Zushi JPX) Okano Haruo (Tokyo JPX, Apparatus for forming reduced pressure and for processing object.

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25. Hyun Kwang-Soo,KRX ; Park Kyung-ho,KRX ; Yoon Neung-goo,KRX ; Choi Kang-jun,KRX ; Jeong Soo-hong,KRX, Atomic layer deposition apparatus for depositing atomic layer on multiple substrates.

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26. Gates Stephen McConnell ; Neumayer Deborah Ann, Atomic layer deposition with nitrate containing precursors.

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27. Sandhu, Gurtej; Doan, Trung T., Atomic layer doping apparatus and method.

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28. Molenaar Arian (Eindhoven NLX), Bath for electroless depositing tin on substrates.

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29. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques.

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30. Jeffrey Zimmerman ; Jay E. Campbell, Bladder water gun with shaped stream discharge orifices.

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31. Popescu Francine (32 ; rue E. Dolet 94100 Saint Maur FRX), Bright tin electroplating bath.

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32. Garo J. Derderian ; Gurtej S. Sandhu, Capacitor fabrication methods and capacitor constructions.

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33. Boyd Trace L. ; Beer Richard D. ; Terbeek Eric A. ; Wong Vernon W. H., Chamber interfacing O-rings and method for implementing same.

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34. Dando, Ross S.; Carpenter, Craig M.; Campbell, Philip H.; Mardian, Allen P., Chemical vapor deposition apparatus.

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35. Ikeda Kei,JPX ; Kobayashi Akiko,JPX, Chemical vapor deposition apparatus.

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36. Campbell ; deceased Bryant A. (late of Los Gatos CA by Louise A. Campbell ; legal representative) Formanek Vincent (Hillside IL), Circular waveguide plasma microwave sterilizer apparatus.

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37. Lane Scott ; Holst Mark, Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas.

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38. Kumar Ananda H. ; Narendrnath Kadthala R. ; Shamouilian Shamouil, Compliant bond structure for joining ceramic to metal.

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39. Davies John T. (El Sobrante CA) Reichelderfer Richard F. (Castro Valley CA), Computer controlled system for processing semiconductor wafers.

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40. Hanak Joseph J. (Lawrenceville NJ), Continuous in-line deposition system.

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41. Bayne Christopher J. (Los Gatos CA) Guiver H. Chris (Ben Lomond CA), Controlled diffusion environment capsule and system.

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42. Raaijmakers Ivo ; Marohl Dan, Degassing method and apparatus.

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43. Li Shijian ; Wang Yaxin ; Redeker Fred C. ; Ishikawa Tetsuya ; Collins Alan W., Deposition chamber and method for depositing low dielectric constant films.

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44. Shang Quanyuan ; Law Kam S. ; Maydan Dan, Deposition chamber cleaning technique using a high power remote excitation source.

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45. Garo J. Derderian ; Gurtej S. Sandhu, Deposition methods.

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46. Beinglass Israel ; Venkatesan Mahalingam, Deposition of silicon nitride thin films.

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47. Emmett John E. (Farmington Hills MI), Device and assembly for mounting parts.

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48. Takasu Katsuji,JPX ; Tsuda Hisanori,JPX ; Sano Masafumi,JPX ; Hirai Yutaka,JPX, Device for forming deposited film.

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49. Vaartstra Brian A., Difunctional amino precursors for the deposition of films comprising metals.

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50. DiMeo ; Jr. Frank ; Bilodeau Steven M. ; Van Buskirk Peter C., Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer.

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51. Balish Kenneth E. ; Nowak Thomas ; Tanaka Tsutomu ; Beals Mark, Dilute remote plasma clean.

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52. Laxman Murugesh ; Padmanaban Krishnaraj ; Michael Cox ; Canfeng Lai ; Narendra Dubey ; Tom K. Cho ; Sudhir Ram Gondhalekar ; Lily L. Pang, Directing a flow of gas in a substrate processing chamber.

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53. Umotoy Salvador ; Ku Vincent ; Yuan Xiaoxiong ; Lei Lawrence Chung-Lai, Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces.

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54. Bay Steven T. (San Jose CA) Prince Dan (Irvine CA), Distributed source assembly.

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55. Ma Yanjun ; Ono Yoshi, Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same.

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56. Welch Michael D. ; Shan Homgqing ; Luscher Paul E. ; Lee Evans Y. ; Carducci James D. ; Salimian Siamak, Double slit-valve doors for plasma processing.

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57. Watabe Masahiro (Kawasaki JPX), Dry process apparatus using plural kinds of gas.

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58. Clarke, Andrew Peter, Dual degas/cool loadlock cluster tool.

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59. Umotoy Salvador P. ; Lei Lawrence C. ; Nguyen Anh N. ; Chiao Steve H., Dual gas faceplate for a showerhead in a semiconductor wafer processing system.

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60. Westfall Richard M. (San Antonio TX), Electrolytic preparation of tin and other metals.

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61. Sidhwa Ardehsir J., Elimination of cracks generated after a rapid thermal process step of a semiconductor wafer.

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62. Deguchi, Nobuyoshi, Exposure apparatus, coating/developing apparatus, method of transferring a substrate, method of producing a device, semiconductor production factory, and method of maintaining an exposure apparatus.

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63. Kie Y. Ahn ; Leonard Forbes, Ferroelectric memory transistor with high-k gate insulator and method of fabrication.

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64. Gu Youfan ; Hauschultz Dana S., Fluid cooled trap.

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65. Yang, Barry Lee-Mean, Fluid injector for and method of prolonged delivery and distribution of reagents into plasma.

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66. Biegelsen David K. ; Jackson Warren B. ; Cheung Patrick C. P., Fluid valves having cantilevered blocking films.

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67. Gilton Terry L. (Boise ID), Formation of self-limiting films by photoemission induced vapor deposition.

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68. Dhindsa Rajinder ; Hao Fangli ; Lenz Eric, Gas distribution apparatus for semiconductor processing.

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69. Fangli Hao ; Rajinder Dhindsa, Gas distribution apparatus for semiconductor processing.

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70. Rajinder Dhindsa ; Fangli Hao ; Eric Lenz, Gas distribution apparatus for semiconductor processing.

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71. Deacon Thomas E. ; Cheung David ; Lee Peter Wai-Man ; Huang Judy H., Gas distribution for CVD systems.

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72. Su Yuh-Jia (Cupertino CA), Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing.

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73. Masaki Toru (Oita JPX) Kawano Setuo (Oita JPX) Saitoh Yuzo (Oita JPX) Ijiri Hirozo (Oita JPX), Gas distribution plate for use with fluidized-bed gas-phase polymerizer.

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74. Ishikawa Tetsuya ; Krishnaraj Padmanabhan ; Gao Feng ; Collins Alan W. ; Pang Lily, Gas distribution system for a CVD processing chamber.

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75. Ishii Kaoru (Garland TX) Wilkinson Thomas F. (Garland TX), Gas flow systems in CCVD reactors.

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76. Quirk George ; Raney Daniel V. ; Heuser Michael Scott ; Shepard ; Jr. C. B., Gas injection disc assembly for CVD applications.

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77. Maydan Dan (Los Altos Hills CA) Mak Steve S. Y. (Pleasanton CA) Olgado Donald (Mountain View CA) Yin Gerald Zheyao (Cupertino CA) Driscoll Timothy D. (Hamilton MT) Shieh Brian (Hualien TWX) Papanu Ja, Gas injection slit nozzle for a plasma process reactor.

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78. Gochberg, Lawrence A.; Burkhart, Christopher W., Gas-purged vacuum valve.

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79. Doehler Joachim (Union Lake MI) Gattuso David A. (Pontiac MI) Hoffman Kevin R. (Sterling Heights MI), Grooved gas gate.

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80. Okase Wataru (Sagamihara JPX), Heat treatment apparatus.

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81. Saito, Yukimasa; Murata, Hitoshi; Yamamoto, Hiroyuki, Heat treatment apparatus and cleaning method of the same.

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82. Yukimasa Saito JP; Hitoshi Murata JP; Hiroyuki Yamamoto JP, Heat treatment apparatus and cleaning method of the same.

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83. Wang, Wenling; Sakamoto, Koichi; Suzuki, Fujio; Yokota, Takashi, Heat treatment apparatus, calibration method for temperature measuring system of the apparatus, and heat treatment system.

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84. Ozaki Yasushi (Sagamihara JPX), Heating device used for a gas phase growing mechanism or heat treatment mechanism.

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85. Sebastien Raoux, Implanatation process for improving ceramic resistance to corrosion.

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86. Rossman, Kent, In situ wafer heat for reduced backside contamination.

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87. Jeff Blahnik, Inflatable slit/gate valve.

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88. Gifford George G. (Bethel CT) O\Neill James A. (New City NY), Infrared thermographic method and apparatus for etch process monitoring and control.

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89. Bartholomew Lawrence D. (Santa Cruz County CA) Provancha Kenneth M. (Santa Cruz County CA) Kamian George (Santa Cruz County CA) DeDontney Jay B. (Santa Cruz County CA) McDaniel Gregory M. (Santa Cruz, Injector and method for delivering gaseous chemicals to a surface.

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90. Sandhu Gurtej S. ; Rolfson J. Brett, Integrated capacitor bottom electrode for use with conformal dielectric.

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91. Doan Trung T. ; Figura Thomas A., Integrated capacitor bottom electrode with etch stop layer.

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92. Park In-seon,KRX ; Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Kim Byung-hee,KRX ; Lee Sang-min,KRX ; Park Chang-soo,KRX, Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature.

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93. Harris James M. ; Cozad Bradford A. ; Hopkins ; Jr. Dean Allyn ; Fitch John S., Integrated electrically operable micro-valve.

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94. Harris James M. ; Fitch John S. ; Cozad Bradford A. ; Hopkins ; Jr. Dean Allyn, Integrated electrically operable normally closed valve.

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95. Karthik Janakiraman ; Kelly Fong ; Chen-An Chen ; Paul Le ; Rong Pan ; Shankar Venkataraman, Integration of remote plasma generator with semiconductor processing chamber.

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96. Izu, Masatsugu; Gattuso, David A., Isolation valve.

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97. Huang Richard J. (Milpitas CA) Cheung Robin W. (Cupertino CA) Rakkhit Rajat (Milpitas CA) Lee Raymond T. (Sunnyvale CA), Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC applicati.

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98. Maraschin Robert A., Load controlled rapid assembly clamp ring.

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99. Hofmeister Christopher A., Load lock with vertically movable support.

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100. Henning Albert Karl ; Zdeblick Mark ; Fitch John Stuart ; Hopkins ; Jr. Dean Allyn ; Lilly Leslie Joe, Low-power thermopneumatic microvalve.

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101. Saito, Masayuki, Low-pressure CVD apparatus and method of manufacturing a thin film.

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102. Aitani Terukazu,JPX ; Yamamoto Takaaki,JPX, Method and apparatus for cleaning a chamber.

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103. Pang Ben ; Cheung David ; Taylor ; Jr. William N. ; Raoux Sebastien ; Fodor Mark, Method and apparatus for cleaning a vacuum line in a CVD system.

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104. Dozoretz Paul ; Gu Youfan, Method and apparatus for controlling polymerized teos build-up in vacuum pump lines.

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105. Rolfson J. Brett ; Hochhalter Elton, Method and apparatus for controlling rate of pressure change in a vacuum process chamber.

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106. Barten Brian L. (Lockport NY) Halstead Gary A. (Lockport NY), Method and apparatus for convection brazing of aluminum heat exchangers.

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107. Blonigan, Wendell T.; Gardner, James T., Method and apparatus for detecting the endpoint of a chamber cleaning.

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108. Subrahmanyam Sudhakar ; Tanaka Tsutomu ; Kelkar Mukul, Method and apparatus for determining the endpoint in a plasma cleaning process.

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109. Shrotriya Ashish ; Bryant Todd C., Method and apparatus for directing fluid through a semiconductor processing chamber.

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110. Robles, Stuardo A.; Sivaramakrishnan, Visweswaren; Nguyen, Bang C.; Rao, Gayathri; Fong, Gary; Lam, Vicente; Lee, Peter Wai-Man; Chang, Mei, Method and apparatus for forming a thin polymer layer on an integrated circuit structure.

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111. John Schmitt ; Frank P. Chang ; Xin Shen Guo ; Ling Chen ; Christophe Marcadal, Method and apparatus for improved control of process and purge material in a substrate processing system.

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112. Golovato Stephen N. ; Milgate ; III Robert W. ; Consoli Paul Louis, Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber.

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113. Dunham Scott William, Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes.

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114. Gu Youfan, Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace.

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115. Sandhu Gurtej S. (Boise ID) Meikle Scott G. (Boise ID) Westmoreland Donald L. (Boise ID), Method and appartus for subliming precursors.

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116. Dalal Hormazdyar M. ; Fallon Kenneth M. ; Gaudenzi Gene J. ; Milkovich Cynthia S., Method for attaching a flip chip on flexible circuit carrier using chip with metallic cap on solder.

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117. Engelken Robert D. (304 Easy St. Jonesboro AR 72401) McCloud Hal E. (2011 Emerald St. Jonesboro AR 72401), Method for electroless and vapor deposition of thin films of three tin sulfide phases on conductive and nonconductive su.

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118. Yu Chorng-Tao (Yorba Linda CA) Isaak Kenneth H. (Tustin CA), Method for film thickness endpoint control.

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119. Hsieh Wen-Yi,TWX ; Yew Tri-Rung,TWX, Method for forming a DRAM cell electrode.

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120. Choi, Sung-Je, Method for forming a dielectric layer of a semiconductor device.

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121. Matsumoto Tomotaka (Kawasaki JPX) Inoue Jun (Kawasaki JPX) Ichimura Teruhiko (Kawasaki JPX) Murata Yuji (Kawasaki JPX) Watanabe Junichi (Kawasaki JPX) Nagahiro Yoshio (Kawasaki JPX) Hodate Mari (Kawa, Method for forming a film and method for manufacturing a thin film transistor.

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122. Kang Sang-bom,KRX ; Chae Yun-sook,KRX ; Park Chang-soo,KRX ; Lee Sang-in,KRX, Method for forming metal layer using atomic layer deposition.

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123. Hsieh, Jung-Yu; Lin, Chin-Hsiang, Method for forming nitride spacer by using atomic layer deposition.

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124. Shahvandi Iraj,DEX ; Vatel Oliver,DEX ; John Peggy,DEX, Method for heating a semiconductor wafer in a process chamber by a shower head, and process chamber.

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125. Zhao Joe W. ; Catabay Wilbur G., Method for improvement of TiN CVD film quality.

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126. Mueller Mark A. (San Jose CA) Guo Xin (Mountain View CA) Egermeier John C. (Santa Clara CA), Method for in-situ cleaning a Ti target in a Ti +TiN coating process.

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127. Leem Hyeun-seog,KRX, Method for manufacturing aluminum metal interconnection layer by atomic layer deposition method.

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128. Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Park Chang-soo,KRX ; Lee Sang-min,KRX, Method for manufacturing thin film using atomic layer deposition.

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129. Nakagawa Yoshinori (Numazu JPX) Mitani Shinichi (Numazu JPX) Kobayashi Takehiko (Mishima JPX) Honda Takaaki (Yokohama JPX), Method for multichamber sheet-after-sheet type treatment.

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130. Lee, Sang-Hyeob; Collins, Joshua, Method for producing ultra-thin tungsten layers with improved step coverage.

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131. Xia Li-Qun ; Pokharrna Himanshu ; Lim Tian-Hoe, Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process.

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132. John Vincent Schmitt ; Ling Chen ; George Michael Bleyle ; Yu Cong ; Alfred Mak ; Mei Chang, Method for unreacted precursor conversion and effluent removal.

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133. Lu Tsung-Lin,TWX ; Chung Ping-Chung,TWX ; Lai Tso-Lung,TWX, Method of adjusting for parallel alignment between a shower head and a heater platform in a chamber used in integrated circuit fabrication.

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134. Kang Sang-Bom,KRX ; Lee Sang-In,KRX, Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device.

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135. Tobe Ryoki,JPX ; Tanaka Yasuaki,JPX ; Sekiguchi Atsushi,JPX ; Jimba Hitoshi,JPX ; Kim So Won,KRX, Method of depositing titanium nitride thin film and CVD deposition apparatus.

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136. Schuegraf Klaus F. ; Fazan Pierre C., Method of deposting uniform dielectric film deposition on textured surfaces.

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137. Werkhoven, Christiaan J.; Raaijmakers, Ivo; Haukka, Suvi P., Method of forming graded thin films using alternating pulses of vapor phase reactants.

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138. Kang Sang-bom,KRX ; Lim Hyun-seok,KRX ; Chae Yung-sook,KRX ; Jeon In-sang,KRX ; Choi Gil-heyun,KRX, Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor.

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139. Mathews Viju K., Method of improving resist adhesion for use in patterning conductive layers.

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140. Alain E. Kaloyeros ; Ana Londergan ; Barry Arkles, Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt.

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141. Zdeblick Mark (Mountain View CA), Method of making an integrated, microminiature electric-to-fluidic valve.

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142. Kajita Akihiro,JPX ; Kaneko Hisashi,JPX, Method of manufacturing semiconductor device.

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143. Wang Shulin ; Xi Ming ; Lando Zvi ; Chang Mei, Method of titanium/titanium nitride integration.

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144. Schmitt, John Vincent; Li, Shih-Hung; Marcadal, Christophe; Chang, Anzhong; Chen, Ling, Methods and apparatus for improved vaporization of deposition material in a substrate processing system.

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145. Carpenter, Craig M.; Dando, Ross S.; Mardian, Allen P., Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces.

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146. Derderian, Garo J.; Sandhu, Gurtej, Methods for forming thin layers of materials on micro-device workpieces.

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147. Miller Charles E. ; Wyss Jerry C. ; Balsley ; Jr. Richard B., Micro mass flow control apparatus and method.

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148. Bifano, Thomas, Micro valve arrays for fluid flow control.

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149. Pennington Michael A., Microwave gas phase plasma source.

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150. Vowles E. John (Deering NH) Maher Joseph A. (Wenham MA) Napoli Joseph D. (Windham NH), Modular vapor processor system.

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151. Umotoy Salvador P. ; Lei Lawrence C. ; Nguyen Anh N. ; Chiao Steve H., One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system.

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152. Pang Ben ; Cheung David ; Taylor ; Jr. William N. ; Raoux Sebastien ; Fodor Mark, Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment.

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153. Crain Kermit (Amery WI) Wary John (Noblesville IN) Olson Roger A. (Amery WI) Beach William F. (Bridgewater NJ), Parylene deposition apparatus including a quartz crystal thickness/rate controller.

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154. Emmi Peter A. ; Park Byeongju, Pass-through semiconductor wafer processing tool and process for gas treating a moving semiconductor wafer.

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155. Alderman Robert J. (Ruskin FL), Phase change insulation system.

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156. Paquet Volker (Mainz DEX) Ackermann Ulrich (Mainz-Gonsenheim DEX) Etzkorn Heniz-W. (Neu-Ansbach DEX) Kersten Ralf T. (Bremthal DEX) Rtze Uwe (Mainz DEX), Plasma CVD process using a plurality of overlapping plasma columns.

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157. Ishida Toshimichi,JPX ; Yamada Yuichiro,JPX ; Takisawa Takahiro,JPX ; Tanabe Hiroshi,JPX, Plasma processing apparatus.

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158. Naohisa Goto JP; Makoto Ando JP; Nobuo Ishii JP, Plasma processing apparatus.

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159. Oyabu, Jun, Plasma processing apparatus.

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160. Suzuki Akira (Nirasaki JPX) Ishizuka Shuichi (Nirasaki JPX) Kawamura Kohei (Yamanashi JPX) Hata Jiro (Yamanashi JPX), Plasma processing apparatus using vertical gas inlets one on top of another.

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161. Hanazaki Minoru,JPX ; Ikushima Takayuki,JPX ; Shirakawa Kenji,JPX ; Yamaguchi Shinji,JPX ; Taki Masakazu,JPX, Plasma processing method and plasma processing apparatus.

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162. Kugimiya Katsuhisa,JPX ; Nishizawa Takanori,JPX ; Tajima Daisuke,JPX, Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen.

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163. Hamid Noorbakhsh ; Michael Welch ; Siamak Salimian ; Paul Luscher ; Hongching Shan ; Kaushik Vaidya ; Jim Carducci ; Evans Lee, Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates.

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164. Drage David J. (Sebastopol CA), Plasma reactor having slotted manifold.

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165. DeOrnellas Stephen P. ; Ditizio Robert A., Plasma reactor with a deposition shield.

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166. Kuniaki Horie JP; Yukio Fukunaga JP; Akihisa Hongo JP; Kiwamu Tsukamoto JP; Kenji Kamoda JP; Hirotake Yamagishi JP; Shinya Uemura JP, Positive displacement type liquid-delivery apparatus.

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167. Tanaka Hitoshi (Sagamihara JPX), Process and apparatus for chemical vapor deposition.

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168. Schneider Gerhard ; Weldon Edwin C., Process chamber having improved gas distributor and method of manufacture.

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169. Uchida Hiroki (Hirakata JPX) Kubo Motonobu (Hirakata JPX) Kiso Masayuki (Hirakata JPX) Hotta Teruyuki (Hirakata JPX) Kamitamari Tohru (Hirakata JPX), Process for electroless plating tin, lead or tin-lead alloy.

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170. Brown Kris K. (Garden City ID), Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon.

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172. Gyu-hwan Kwag KR; Hyun Han KR; Ki-heum Nam KR, Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device.

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173. Doering Kenneth ; Galewski Carl J. ; Gadgil Prasad N. ; Seidel Thomas E., Processing chamber for atomic layer deposition processes.

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174. Kenneth Doering ; Carl J. Galewski ; Prasad N. Gadgil ; Thomas E. Seidel, Processing chamber for atomic layer deposition processes.

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175. Kobayashi, Yasuo; Miyatani, Kotaro; Maekawa, Kaoru, Processing method and apparatus for removing oxide film.

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176. Brcka, Jozef, Protection of dielectric window in inductively coupled plasma generation.

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178. Erickson Mark ; Gudmundsson Thorkell ; Shah Sunil C., Ramp rate limiter to control stress during ramping.

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179. Derderian, Garo J., Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces.

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180. Komino Mitsuaki,JPX, Reduced pressure and normal pressure treatment apparatus.

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181. Maydan Dan ; Nowak Romuald ; Sinha Ashok K., Remote plasma source for chamber cleaning.

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182. Nakamura Teruhisa (Shin Nanyo JPX), Seal assembly for thermal treatment furnaces using an atmospheric gas containing hydrogen gas.

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183. Donakowski William A. (Dearborn Heights MI) Morgan John R. (Dearborn Heights MI), Selective tin deposition onto aluminum piston skirt areas.

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184. Bosch, William Frederick; Dynan, Stephen Anthony; Shull, Marc David, Semiconductor processing equipment having improved particle performance.

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185. Turner Charles L. ; Manning Monte, Semiconductor processing method for providing large grain polysilicon films.

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186. Makoto Sekine JP; Nobuo Hayasaka JP; Katsuya Okumura JP, Semiconductor processing system and method of using the same.

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187. Goodwin Dennis L. ; Hawkins Mark R. ; Crabb Richard ; Doley Allan D., Semiconductor processing system with gas curtain.

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188. Arthur Sherman, Sequential chemical vapor deposition.

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189. Tony P. Chiang ; Karl F. Leeser, Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD).

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190. Fujikawa Yuichiro (Yamanashi-ken JPX) Hatano Tatsuo (Yamanashi-ken JPX) Murakami Seishi (Yamanashi-ken JPX), Shower head and film forming apparatus using the same.

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191. Lee Gil-Gwang (Seoul KRX) Fujihara Kazuyuki (Seoul KRX) Chang Kyu-hwan (Kyungki-do KRX), Showerhead for a gas supplying apparatus.

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192. Czaja James J. (Maple Plain MN), Solder stripping solution.

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193. Spahn Robert G., Source for thermal physical vapor deposition of organic electroluminescent layers.

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194. Demaray Richard E. (Portola Valley CA) Herrera Manuel (San Mateo CA) Berkstresser David E. (Los Gatos CA), Sputtering device and target with cover to hold cooling fluid.

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195. Shang Quanyuan ; Sun Sheng ; Law Kam S. ; Beer Emanuel, Surface-treated shower head for use in a substrate processing chamber.

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196. Aral Gurcan, System and method for controlling pressure.

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198. Frankel Jonathan, Systems and methods for controlling the temperature of a vapor deposition apparatus.

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199. Stoddard Kevin ; McHugh Paul R. ; Tsakalis Konstantinos, Temperature control system for a thermal reactor.

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200. Saito Yukimasa,JPX, Thermal processing system.

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205. Ikeda Towl,JPX ; Horiuchi Takashi,JPX, Trap apparatus.

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206. Chen, Yen-Hsing; Lee, Hsing-Jui; Tseng, Fu-Kuo; Lee, Ching-Ling; Liao, Kuo-Hung, Truncated dummy plate for process furnace.

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207. Freerks Frederik W., Two-piece slit valve door with molded-in-place seal for a vacuum processing system.

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209. Munakata Yasuo (Kawasaki JPX) Gotou Mineo (Kawasaki JPX), Vacuum device for handling workpieces.

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212. Ohashi Tadashi,JPX ; Chaki Katuhiro,JPX ; Xin Ping,JPX ; Fujii Tatsuo,JPX ; Iwata Katsuyuki,JPX ; Mitani Shinichi,JPX ; Honda Takaaki,JPX, Vapor deposition apparatus and method for forming thin film.

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213. Gadgil Prasad N. ; Seidel Thomas E., Vertically-stacked process reactor and cluster tool system for atomic layer deposition.

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