초록 ▼

Methods are disclosed for reducing damage to an ultra-low dielectric constant (ULK) dielectric during removal of a planarizing layer such as a crosslinked polymer. The methods at least partially fill an opening with an at most lightly crosslinked polymer, followed by the planarizing layer. When the

Methods are disclosed for reducing damage to an ultra-low dielectric constant (ULK) dielectric during removal of a planarizing layer such as a crosslinked polymer. The methods at least partially fill an opening with an at most lightly crosslinked polymer, followed by the planarizing layer. When the at most lightly crosslinked polymer and planarizing layer are removed, the at most lightly crosslinked polymer removal is easier than removal of the planarizing layer, i.e., crosslinked polymer, and does not damage the surrounding dielectric compared to removal chemistries used for the crosslinked polymer.

대표청구항 ▼

What is claimed is: 1. A method of forming an integrated circuit, the method comprising the steps of: forming an opening in a dielectric; at least partially filling the opening with an at most lightly crosslinked polymer; forming a crosslinked polymer over the at most lightly crosslinked polymer; p

What is claimed is: 1. A method of forming an integrated circuit, the method comprising the steps of: forming an opening in a dielectric; at least partially filling the opening with an at most lightly crosslinked polymer; forming a crosslinked polymer over the at most lightly crosslinked polymer; performing other processing; removing the crosslinked polymer; and removing the at most lightly crosslinked polymer. 2. The method of claim 1, wherein the at most lightly crosslinked polymer includes one of: an un-crosslinked polymer and a lightly crosslinked polymer. 3. The method of claim 2, wherein the at most lightly crosslinked polymer removal step includes performing a wet etch in the case that the at most lightly crosslinked polymer includes the un-crosslinked polymer. 4. The method of claim 3, wherein the wet etch performing step includes using at least one of: gamma butyl lactone (GBL) and tetra methyl ammonium hydroxide (TMAH). 5. The method of claim 2, wherein the at most lightly crosslinked polymer removal step includes performing a thermal decomposition. 6. The method of claim 2, wherein the un-crosslinked polymer includes a cyclic olefin selected from the group consisting of: Norbornene-hexafluoro alcohol (Norbornene-HFA), Norbornene-sulfonomide and Poly-Norbornene Acetate. 7. The method of claim 2, wherein the lightly crosslinked polymer includes polymethyl methacrylate vinyl benzene cyclobutene (PMMA-VBCB). 8. The method of claim 1, wherein the at least partially filling step includes filling the opening with the at most lightly crosslinked polymer and etching to remove the at most lightly crosslinked polymer except in a lower portion of the opening. 9. The method of claim 1, wherein the performing other processing step includes: depositing a barrier layer; and forming a line opening including removing at least a portion of the crosslinked polymer. 10. The method of claim 1, wherein the at most lightly crosslinked polymer includes a poly(hydroxystyrene)-based system comprising poly(4-hydroxystyrene), 9-anthracenylmethylated poly(hydroxystyrene), tetrahydro-1,3,4,6-tetrakis(methoxymethyl)-imidazo[4,5-d]imidazole-2,5-(1H,3H)-dione and a p-nitrobenzyl tosylate (pNBT). 11. A method of reducing damage to a dielectric during removal of a planarizing layer therefrom, the method comprising the steps of: at least partially filling an opening in the dielectric with an at most lightly crosslinked polymer prior to forming the planarizing layer; performing processing that includes removing at least a portion of the planarizing layer; and removing the at most lightly crosslinked polymer. 12. The method of claim 11, wherein the at most lightly crosslinked polymer includes one of: an un-crosslinked polymer and a lightly crosslinked polymer. 13. The method of claim 12, wherein the at most lightly crosslinked polymer removal step includes performing a wet etch in the case that the at most lightly crosslinked polymer includes the un-crosslinked polymer. 14. The method of claim 13, wherein the wet etch performing step includes using at least one of: gamma butyl lactone (GBL) and tetra methyl ammonium hydroxide (TMAH). 15. The method of claim 12, wherein the at most lightly crosslinked polymer removal step includes performing a thermal decomposition. 16. The method of claim 12, wherein the un-crosslinked polymer includes a cyclic olefin selected from the group consisting of: Norbornene-hexafluoro alcohol (Norbornene-HFA), Norbornene-sulfonomide and Poly-Norbornene Acetate. 17. The method of claim 12, wherein the lightly crosslinked polymer includes polymethyl metha-acrylate vinyl benzene cyclobutene. 18. The method of claim 11, wherein the planarizing layer includes a crosslinked polymer including a poly(hydroxystyrene)-based system comprising poly(4-hydroxystyrene), 9-anthracenylmethylated poly(hydroxystyrene), tetrahydro-1,3,4,6-tetrakis(methoxymethyl)-imidazo[4,5-d]imidazole-2,5-(1H,3H)-dione and a p-nitrobenzyl tosylate (pNBT). 19. A method of forming an integrated circuit, the method comprising the steps of: forming an opening in a dielectric; at least partially filling the opening with an at most lightly crosslinked polymer; forming a crosslinked polymer over the at most lightly crosslinked polymer; depositing a barrier layer; forming a line opening and removing at least a portion of the crosslinked polymer; removing any remaining portion of the crosslinked polymer; removing the at most lightly crosslinked polymer; and forming a metal in at least one of the opening and the line opening. 20. The method of claim 19, wherein the crosslinked polymer includes a non-imageable planarizing layer.