초록 ▼

Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interfa

Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

대표청구항 ▼

What is claimed is: 1. A vertical GaN-based light emitting diode (LED) comprising: an n-electrode; an AlGaN layer formed under the n-electrode; an undoped GaN layer formed under the AlGaN layer to provide a two-dimensional electron gas (2DEG) layer to a junction interface of the AlGaN layer; a GaN-

What is claimed is: 1. A vertical GaN-based light emitting diode (LED) comprising: an n-electrode; an AlGaN layer formed under the n-electrode; an undoped GaN layer formed under the AlGaN layer to provide a two-dimensional electron gas (2DEG) layer to a junction interface of the AlGaN layer; a GaN-based LED structure including an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer; a p-electrode formed under the GaN-based LED structure; and a conductive substrate formed under the p-electrode. 2. The vertical GaN-based LED according to claim 1, wherein the surface of the AlGaN layer contacting the n-electrode has a Ga-face structure in which nitrogen (N) elements are disposed on a vertical uppermost layer of gallium elements. 3. The vertical GaN-based LED according to claim 1, further comprising a conductive junction layer formed on the p-electrode or at an interface between the p-electrode and the conductive substrate. 4. The vertical GaN-based LED according to claim 1, further comprising a reflective layer formed under the p-electrode. 5. The vertical GaN-based LED according to claim 1, wherein the undoped GaN layer has a thickness of 50-500 Å. 6. The vertical GaN-based LED according to claim 1, wherein the AlGaN layer has an Al content of 10-50%. 7. The vertical GaN-based LED according to claim 1, wherein the AlGaN layer has a thickness of 50-500 Å. 8. The vertical GaN-based LED according to claim 1, wherein the AlGaN layer is an undoped AlGaN layer. 9. The vertical GaN-based LED according to claim 1, wherein the AlGaN layer is a doped AlGaN layer doped with n-type impurities. 10. The vertical GaN-based LED according to claim 1, wherein the AlGaN layer is doped with silicon impurities or oxygen impurities.