초록 ▼

A chemical vapor deposition method includes a step of maintaining a hydrogen plasma at low pressure in a processing chamber. The processing chamber has a long, wide, thin geometry to favor deposition of thin-film silicon on sheet substrates over the chamber walls. The sheet substrates are moved thro

A chemical vapor deposition method includes a step of maintaining a hydrogen plasma at low pressure in a processing chamber. The processing chamber has a long, wide, thin geometry to favor deposition of thin-film silicon on sheet substrates over the chamber walls. The sheet substrates are moved through between ends. A pair of opposing radio frequency electrodes above and below the workpieces are electrically driven hard to generate a flat, pancaked plasma cloud in the middle spaces of the processing chamber. A collinear series of gas injector jets pointed slightly up on a silane-jet manifold introduce 100% silane gas at high velocity from the side in order to roll the plasma cloud in a coaxial vortex. A second such silane-jet manifold is placed on the opposite side and pointed slightly down to further help roll the plasma and maintain a narrow band of silane concentration. A silane-concentration monitor observes the relative amplitudes of the spectral signatures of the silane and the hydrogen constituents in the roll-vortex plasma and outputs a process control feedback signal that is used to keep the silane in hydrogen concentration at about 6-7%.

대표청구항 ▼

What is claimed is: 1. A method of thin-silicon chemical vapor deposition (CVD), comprising: spawning a hydrogen plasma cloud proximate to a workpiece substrate in a deposition chamber with an RF-field generator; injecting a gas into said hydrogen plasma cloud during operation from a silane input s

What is claimed is: 1. A method of thin-silicon chemical vapor deposition (CVD), comprising: spawning a hydrogen plasma cloud proximate to a workpiece substrate in a deposition chamber with an RF-field generator; injecting a gas into said hydrogen plasma cloud during operation from a silane input so as to roll said hydrogen plasma cloud into a coaxial vortex; injecting p-type impurities, n-type impurities, or no impurities into said hydrogen plasma cloud during operation which provides for alternative deposition of p-type, n-type, and intrinsic silicon layers having substantially equal effective concentrations of said p-type and n-type impurities, respectively, on said workpiece substrate; and receiving a deposition gas mixture from said deposition chamber through an exhaust system; wherein, a controlled pressure and a consistent concentration of said silane gas is provided for in said hydrogen plasma cloud during operation. 2. The CVD method of claim 1, further comprising: admitting silane and impurity dopant gases at their respective inputs at a rate that matches their consumption from said hydrogen plasma during deposition. 3. The CVD method of claim 1, further comprising: exhausting said gas mixture in said chamber at a rate that matches said rate at which reaction products are generated in said deposition process. 4. The CVD method of claim 1, further comprising: selectively passing only hydrogen with a filter before exhausting said system to prevent silane input gasses from being wasted. 5. The CVD system of claim 1, further comprising: continuously monitoring said deposition gas mixture in said deposition chamber with a sensor, and providing a feedback signal that can be used to maintain a particular pressure and a specific concentration of reaction gasses. 6. The CVD method of claim 1, further comprising: providing a feedback control system that receives inputs from sensors that measure gas pressure, gas concentrations, gas temperature, RF power level, and that adjusts a gas input and a gas exhaust rate, an RF-power level, and a gas temperature to maintain particular deposition conditions. 7. The CVD method of claim 1, further comprising: separating multiple chambers with different gas mixtures in each chamber by baffles and buffer regions to minimize a bypass gas flow between chambers. 8. The method of claim 1 wherein said deposition gas mixture is received from said deposition chamber through said exhaust system at approximately twice a rate at which said gas is injected into said hydrogen plasma cloud. 9. The method of claim 1 further comprising inducing a plurality of roll-vortex plasma clouds within said deposition chamber. 10. The method of claim 1 wherein said gas comprises approximately 100% silane. 11. The method of claim 1 wherein said step of injecting said gas further comprises: injecting said gas from a first series of gas injector jets pointed upward in relation to said workpiece substrate; and injecting said gas from a second series of gas injector jets pointed downward in relation to said workpiece substrate. 12. The method of claim 11 wherein said first series of gas injector jets are collinear. 13. The method of claim 11 or 12 wherein said second series of gas injector jets are collinear. 14. The method of claim 1 or 11 further comprising recycling said deposition gas mixture received through said exhaust system so as to capture unused silane and to return said silane to be available to be injected into said hydrogen plasma cloud.