초록 ▼

A power supply in which a feed voltage (Us) is guided through at least one longitudinal branch to at least one output, the at least one branch having a disconnect fuse formed as a controlled semiconductor switch (SW1) and a monitoring unit (UWE) being set up to supply a disconnect signal (s1) to the

A power supply in which a feed voltage (Us) is guided through at least one longitudinal branch to at least one output, the at least one branch having a disconnect fuse formed as a controlled semiconductor switch (SW1) and a monitoring unit (UWE) being set up to supply a disconnect signal (s1) to the semiconductor switch when there are changes in voltage or current beyond pre-definable tolerances, in which at least one auxiliary semiconductor switch (H1A), likewise triggered by the monitoring unit (UWE), is connected in parallel to the semiconductor switch (SW1) and in the event of an overload absorbs a substantial portion of the overload current in the branch.

대표청구항 ▼

The invention claimed is: 1. A power supply in which a feed voltage (Us) is routed through at least one longitudinal branch to at least one output, the at least one branch having a disconnect fuse formed as a controlled semiconductor switch (SW1) and a monitoring unit (UWE) being set up to supply a

The invention claimed is: 1. A power supply in which a feed voltage (Us) is routed through at least one longitudinal branch to at least one output, the at least one branch having a disconnect fuse formed as a controlled semiconductor switch (SW1) and a monitoring unit (UWE) being set up to supply a disconnect signal (s1) to the semiconductor switch when there are changes in voltage or current beyond pre-defined tolerances, wherein at least one series circuit of an auxiliary semiconductor switch (H1A) and a ballast resistor (RA1), is connected in parallel to the main semiconductor switch (SW1), auxiliary semiconductor switch (H1A) is triggered by the monitoring unit (SWE), and the semiconductor switches (SW1, HIA) are of the self-locking FET type, the gate of the main semiconductor switch (SW1) being connected to an output of the monitoring unit (UWE) via a Zener diode (ZD1), and the gate of the auxiliary semiconductor switch (H1A) being directly connected to the output of the monitoring unit (UWE) and being triggered thereby, so that a change of the output voltage of the monitoring unit (UWE) towards a locking of the semiconductor switches (SW1, H1A) causes the main switch (SW1) to change over into the linear mode, according to the value of the Zener voltage of diode (ZD1), sooner than the auxiliary switch (H1A), which takes over so much current from the main switch (SW1) as is allowed by its own internal resistance and its ballast series resistor (RA1) and in the event of an overload absorbs a substantial portion of the overload current in the branch. 2. The power supply as described in claim 1, wherein the monitoring unit (UWE) is set up to keep the auxiliary semiconductor switch (H1A) at least substantially disconnected during normal operation, but to switch it on in the event of an overload while simultaneously disconnecting the main semiconductor switch (SW1). 3. The power supply as described in claim 1, wherein the pre-definable short-circuit current (IK1) of the branch is essentially determined by the ballast resistor (RA1) and the feed voltage (Us), so that RA1≈Us/IKI. 4. The power supply as described in claim 1, wherein the ballast resistor (RA1) is formed as a composite carbon resistor. 5. The power supply as described in claim 1, wherein the Zener voltage of diode (ZD1) roughly corresponds to the threshold voltage of the FET-type switches (SW1, H1A).