초록 ▼

The present invention relates to photoresist compositions for EUV and methods for forming photoresist patterns. More specifically, fine photoresist patterns: of less than 50 nm without collapse are formed with EUV (Extreme Ultraviolet) as an exposure light source by using a negative photoresist comp

The present invention relates to photoresist compositions for EUV and methods for forming photoresist patterns. More specifically, fine photoresist patterns: of less than 50 nm without collapse are formed with EUV (Extreme Ultraviolet) as an exposure light source by using a negative photoresist composition comprising a melamine derivative and polyvinylphenol.

대표청구항 ▼

What is claimed is: 1. A photoresist composition comprising: (a) a melamine derivative, (b) a blend polymer of poly(N,N-dimethacrylamide/ 3.3-dimethoxypropene/acrolein) and polyvinylphenol, (c) a photoacid generator, and (d) an organic solvent. 2. The photoresist composition according to claim 1

What is claimed is: 1. A photoresist composition comprising: (a) a melamine derivative, (b) a blend polymer of poly(N,N-dimethacrylamide/ 3.3-dimethoxypropene/acrolein) and polyvinylphenol, (c) a photoacid generator, and (d) an organic solvent. 2. The photoresist composition according to claim 1, wherein the melamine derivative is a compound represented by Formula 1: wherein R1 and R2 are individually a C1-C20 alkyl or C1-C10 ether group. 3. The photoresist composition according to claim 1, wherein the melamine derivative is a compound represented by Formula 1a: 4. The photoresist composition according to claim 1, wherein the melamine derivative is present in an amount ranging from 0.1 wt % to 20 wt % based on total weight of the photoresist composition. 5. The photoresist composition according to claim 1, wherein the polymer has a molecular weight ranging from 5000 to 9000. 6. The photoresist composition according to claim 1, wherein the polymer is present in an amount ranging from 2.5 wt % to 15 wt % based on total weight of the photoresist composition. 7. The photoresist composition according to claim 1, wherein the photoacid generator is selected from the group consisting of phthalimidotrifluoromethane sulfonate, dinitrobenzyltosylate, n-decyl disulfone, and naphthylimido trifluoromethane sulfonate. 8. The photoresist composition according to claim 1, wherein the photoacid generator comprises i) a first photoacid generator selected form the group consisting of phthalimidotrifluoromethane sulfonate, dinitrobenzyltosylate, n-decyl disulfone, and naphthylimido trifluoromethane sulfonate; and ii) a second photoacid generator selected from the group consisting of diphenyl iodide hexafluorophosphate, diphenyl iodide hexafluoroarsenate, diphenyl iodide hexafluoroantimonate, diphenyl p-methoxyphenylsulfonium triflate, diphenyl p-toluenylsulfonium triflate, diphenyl p-isobutylphenylsulfonium triflate, triphenylsulfonium hexafluoroarsenate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium triflate, and dibutylnaphthylsulfonium triflate. 9. The photoresist composition according to claim 1, wherein the photoacid generator is present in an amount ranging from 0.05 wt % to 10 wt % based on total weight of the photoresist polymer. 10. The photoresist composition according to claim 1, wherein the organic solvent is selected from diethylene glycol diethyl ether, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propyleneglycol methyletheracetate, cyclohexanone, and mixtures thereof. 11. The photoresist composition according to claim 1, wherein the organic solvent is present in an amount ranging from 500 wt % to 2000 wt % based on total weight of the photoresist polymer. 12. A method for forming a photoresist pattern, comprising the steps of: (a) coating a photoresist composition on a top portion of an underlying layer to be etched to form a photoresist film; (b) exposing the photoresist film to EUV light; (c) baking the exposed photoresist film; and (d) developing the resulting structure to obtain a photoresist pattern; wherein the photoresist composition comprises a melamine derivative, a polyvinylphenol type polymer, a photoacid generator, and an organic solvent. 13. A semiconductor device manufactured by the method of claim 12. 14. The method according to according to claim 12, wherein the polymer is a blend polymer of poly(N, N-dimethylacrylamide/3,3-dimethoxypropene/acrolein) and polyvinylphenol. 15. The method according to according to claim 12, wherein the melamine derivative is a compound represented by Formula 1: wherein R1 and R2 are individually a C1-C20 alkyl or C1-C10 ether group. 16. The method according to according to claim 15,, wherein the melamine derivative is a compound represented by Formula 1a: 17. The method according to according to claim 12, wherein the melamine derivative is present in an amount ranging from 0.1 wt % to 20 wt % based on total weight of the photoresist composition. 18. The method according to according to claim 12, wherein the polymer has a molecular weight ranging from 5000 to 9000. 19. The method according to according to claim 12, wherein the polymer is present in an amount ranging from 2.5 wt % to 15 wt % based on total weight of the photoresist composition. 20. The method according to according to claim 12, wherein the photoacid generator is selected from the group consisting of phthalimidotrifluoromethane sulfonate, dinitrobenzyltosylate, n-decyl disulfone, and naphthylimido trifluoromethane sulfonate. 21. The method according to according to claim 12, wherein the photoacid generator comprises i) a first photoacid generator selected form the group consisting of phthalimidotrifluoromethane sulfonate, dinitrobenzyltosylate, n-decyl disulfone, and naphthylimido trifluoromethane sulfonate; and ii) a second photoacid generator selected from the group consisting of diphenyl iodide hexafluorophosphate, diphenyl iodide hexafluoroarsenate, diphenyl iodide hexafluoroantimonate, diphenyl p-methoxyphenylsulfonium triflate, diphenyl p-toluenylsulfonium triflate, diphenyl p-isobutylphenylsulfonium triflate, triphenylsulfonium hexafluoroarsenate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium triflate, and dibutylnaphthylsulfonium triflate. 22. The method according to according to claim 12, wherein the photoacid generator is present in an amount ranging from 0.05 wt % to 10 wt % based on total weight of the photoresist polymer. 23. The method according to according to claim 12, wherein the organic solvent is selected from diethylene glycol diethyl ether, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propyleneglycol methyletheracetate, cyclohexanone, and mixtures thereof. 24. The method according to according to claim 12, wherein the organic solvent is present in an amount ranging from 500 wt % to 2000 wt % based on total weight of the photoresist polymer.