초록 ▼

A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure. The AP-pinned structure has two ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer and with their magnetization directions oriented anti

A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure. The AP-pinned structure has two ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer and with their magnetization directions oriented antiparallel. One of the ferromagnetic layers in the AP-pinned structure is the reference layer in contact with the CPP-SV sensor's nonmagnetic electrically conducting spacer layer. In the improved AP-pinned structure each of the ferromagnetic layers has a thickness greater than 30 Å, preferably greater than approximately 50 Å, and the APC layer is either Ru or Ir with a thickness less than 7 Å, preferably about 5 Å or less. The ultrathin APC layer, especially if formed of iridium (Ir), provides significant coupling strength to allow the thick ferromagnetic layers to retain their magnetization directions in a stable antiparallel orientation.

대표청구항 ▼

What is claimed is: 1. A current-perpendicular-to-the-plane magnetoresistive read head for reading magnetically recorded data from tracks on a magnetic recording medium when a sense current is applied to the head, the head comprising: a first electrical lead consisting of a shield layer of electric

What is claimed is: 1. A current-perpendicular-to-the-plane magnetoresistive read head for reading magnetically recorded data from tracks on a magnetic recording medium when a sense current is applied to the head, the head comprising: a first electrical lead consisting of a shield layer of electrically-conductive magnetically-permeable material; a seed layer on the first shield; a self-pinned antiparallel (AP) pinned structure comprising a first AP-pinned (AP1) ferromagnetic layer on the seed layer and having an in-plane magnetization direction, a second AP-pinned (AP2) ferromagnetic multilayer having an in-plane magnetization direction substantially antiparallel to the magnetization direction of the AP1 layer, and an AP coupling (APC) layer between and in contact with the AP1 layer and the AP2 multilayer, each of the AP1 layer and the AP2 multilayer having a thickness greater than 50 Å, the AP2 multilayer comprising a CoFe alloy layer and a NiFe alloy layer between the APC layer and the CoFe alloy layer, and the APC layer consisting essentially of Ir and having a thickness less than or equal to 5 Å, the AP-pinned structure having a saturation magnetization greater than 5 kOe; a nano-oxide layer comprising an oxidized surface layer of the CoFe layer; an electrically conductive nonmagnetic spacer layer on the oxidized surface layer of the CoFe layer; a free ferromagnetic layer on the spacer layer and having an in-plane magnetization direction oriented substantially orthogonal to the magnetization directions of the AP1 layer and the AP2 multilayer in the absence of an external magnetic field; a capping layer on the free ferromagnetic layer; and a second electrical lead consisting of a shield layer of electrically-conductive magnetically-permeable material on the capping layer, the self-pinned AP-pinned structure, spacer layer and free ferromagnetic layer being located between said first and second leads, said sense current being directed into one of said leads, perpendicularly through the layers of the sel-pinned AP-pinned structure, spacer layer and free ferromagnetic layer and out said other lead. 2. The read head of claim 1 wherein the AP1 layer and the AP2 multilayer have substantially the same magnetic moment.