Apparatus for providing gas to a processing chamber
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-016/00
F26B-017/00
출원번호
US-0146311
(2005-06-06)
등록번호
US-7294208
(2007-11-13)
발명자
/ 주소
Guenther,Rolf A.
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson & Sheridan LLP
인용정보
피인용 횟수 :
19인용 특허 :
136
초록▼
A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a unitary, isolatable, transportable canister having a plurality of first spacing elements, a plurality of second spacing elements and a
A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a unitary, isolatable, transportable canister having a plurality of first spacing elements, a plurality of second spacing elements and a solid material disposed within the canister. The spacing elements have different mean diameters. The solid material is adapted to produce a gas vapor when exposed to a temperature above a predetermined level at a predetermined pressure. In another embodiment, an apparatus for generating gas includes a gas source coupled to a processing chamber by a first gas line. A canister is coupled in-line with the first gas line and contains a solid material that produces a process gas when heated. A heater is disposed between the gas source and the canister to heat gas flowing into the canister.
대표청구항▼
The invention claimed is: 1. An apparatus for generating gas within a process system, comprising: a modular, isolatable, transportable canister adapted for use in a gas panel of a delivery system connected to a process chamber; and a plurality of metallic elements and a solid precursor material con
The invention claimed is: 1. An apparatus for generating gas within a process system, comprising: a modular, isolatable, transportable canister adapted for use in a gas panel of a delivery system connected to a process chamber; and a plurality of metallic elements and a solid precursor material contained within the canister, wherein the solid precursor material is in contact with the metallic elements. 2. The apparatus of claim 1, wherein the solid precursor material comprises an element selected from the group consisting of tantalum, tungsten, nickel and fluorine. 3. The apparatus of claim 2, wherein the solid precursor material comprises pentakis(dimethylamino) tantalum. 4. The apparatus of claim 1, wherein the metallic elements comprise a metal selected from the group consisting of stainless steel, aluminum, nickel, alloys thereof and combinations thereof. 5. The apparatus of claim 4, wherein the metallic elements have a shape selected from the group consisting of spherical, cylindrical, conical, ellipsoidal, regular polyhedral, irregular polyhedral, derivatives thereof and combinations thereof. 6. The apparatus of claim 5, wherein the metallic elements have irregular polyhedral shapes the solid precursor material comprises pentakis(dimethylamino) tantalum. 7. The apparatus of claim 1, wherein at least one valve is disposed on the canister. 8. The apparatus of claim 7, wherein the at least one valve comprises a first valve coupled to an inlet of the canister for receiving a carrier gas and a second valve coupled to an outlet of the canister for dispensing a precursor gas. 9. The apparatus of claim 8, wherein the first valve is coupled to the delivery system by a first disconnect fitting and the second valve is coupled to the delivery system by a second disconnect fitting, wherein the first and second disconnect fittings facilitate removal of the canister. 10. The apparatus of claim 8, wherein a heater device is positioned to thermally contact the carrier gas prior to the carrier gas entering the inlet. 11. The apparatus of claim 10, wherein the heater device comprises a component selected from the group consisting of a heating element, a heater block, a cartridge heater, a heat transfer fluid, a surface heater, derivatives thereof and combinations thereof. 12. An apparatus for generating gas within a process system, comprising: a canister adapted for use in a gas panel of a delivery system connected to a process chamber; a source of a heated carrier gas connected to the canister; and a plurality of metallic elements in contact with a precursor material comprising pentakis(dimethylamino) tantalum contained within the canister. 13. The apparatus of claim 12, wherein the canister is a modular, isolatable, transportable canister. 14. The apparatus of claim 13, wherein at least one valve is disposed on the canister. 15. The apparatus of claim 14, wherein the at least one valve comprises a first valve coupled to an inlet of the canister for receiving a carrier gas and a second valve coupled to an outlet of the canister for dispensing a precursor gas. 16. The apparatus of claim 15, wherein the first valve is coupled to the delivery system by a first disconnect fitting and the second valve is coupled to the delivery system by a second disconnect fitting, wherein the first and second disconnect fittings facilitate removal of the canister. 17. The apparatus of claim 15, wherein a heater device is positioned to thermally contact the carrier gas prior to the carrier gas entering the inlet. 18. The apparatus of claim 17, wherein the heater device comprises a component selected from the group consisting of a heating element, a heater block, a cartridge heater, a heat transfer fluid, a surface heater, derivatives thereof and combinations thereof. 19. The apparatus of claim 12, wherein the metallic elements comprise a metal selected from the group consisting of stainless steel, aluminum, nickel, alloys thereof and combinations thereof. 20. The apparatus of claim 19, wherein the metallic elements have a shape selected from the group consisting of spherical, cylindrical, conical, ellipsoidal, regular polyhedral, irregular polyhedral, derivatives thereof and combinations thereof. 21. The apparatus of claim 20, wherein the metallic elements have irregular polyhedral shapes. 22. An apparatus for generating gas within a process system, comprising: a modular, isolatable, transportable canister adapted for use in a gas panel of a delivery system connected to a process chamber; at least one valve disposed on the canister and adapted for connecting to a delivery system; and a plurality of elements coated by a precursor material contained within the canister. 23. The apparatus of claim 22, wherein the at least one valve comprises a first valve coupled to an inlet of the canister for receiving a carrier gas and a second valve coupled to an outlet of the canister for dispensing a precursor gas. 24. The apparatus of claim 23, wherein the first valve is coupled to the delivery system by a first disconnect fitting and the second valve is coupled to the delivery system by a second disconnect fitting, wherein the first and second disconnect fittings facilitate removal of the canister. 25. The apparatus of claim 23, wherein a heater device is positioned to thermally contact the carrier gas prior to the carrier gas entering the inlet. 26. The apparatus of claim 25, wherein the heater device comprises a component selected from the group consisting of a heating element, a heater block, a cartridge heater, a heat transfer fluid, a surface heater, derivatives thereof and combinations thereof. 27. The apparatus of claim 22, wherein the precursor material comprises a compound selected from a group consisting of xenon difluoride, pentakis(dimethylamino) tantalum, nickel carbonyl, tungsten hexacarbonyl and derivatives thereof. 28. The apparatus of claim 22, wherein the precursor material comprises an element selected from the group consisting of tantalum, tungsten, nickel and fluorine. 29. The apparatus of claim 28, wherein the elements comprise a metal selected from the group consisting of stainless steel, aluminum, nickel, alloys thereof and combinations thereof. 30. The apparatus of claim 29, wherein the elements have a shape selected from the group consisting of spherical, cylindrical, conical, ellipsoidal, regular polyhedral, irregular polyhedral, derivatives thereof and combinations thereof. 31. The apparatus of claim 30, wherein the elements have irregular polyhedral shapes and the precursor material comprises pentakis(dimethylamino) tantalum. 32. An apparatus for generating gas within a process system, comprising: a modular, isolatable, transportable canister adapted for use in a gas panel of a delivery system connected to a process chamber; a first valve and an inlet disposed on the canister for receiving a carrier gas; a second valve and an outlet disposed on the canister for dispensing a precursor gas; and a plurality of metallic elements coated by a precursor material contained within the canister. 33. The apparatus of claim 32, wherein the first valve is coupled to the delivery system by a first disconnect fitting and the second valve is coupled to the delivery system by a second disconnect fitting, wherein the first and second disconnect fittings facilitate removal of the canister. 34. The apparatus of claim 32, wherein the metallic elements have irregular polyhedral shapes and the precursor material comprises pentakis(dimethylamino) tantalum.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (136)
Chiang, Tony P.; Leeser, Karl F.; Brown, Jeffrey A.; Babcoke, Jason E., Adsorption process for atomic layer deposition.
Yuusuke Sato JP; Takashi Kataoka JP; Naoki Tamaoki JP; Toshimitsu Ohmine JP, Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process.
Barrows Thomas H. (Cottage Grove MN) Truong Myhanh T. (Blaine MN) Suszko Paul R. (Cottage Grove MN), Biocompatible porous matrix of bioabsorbable material.
Gusman Michael (Palo Alto CA) Tong Gilbert (Union City CA) Sanjurjo Angel (San Jose CA) Johnson Sylvia M. (Piedmont CA) Lamoreaux Robert (San Jose CA), Carbonate-free inorganic nitrates or oxides and process thereof.
Lei, Lawrence C.; Mak, Alfred W.; Tzu, Gwo-Chuan; Tepman, Avi; Xi, Ming; Glenn, Walter Benjamin, Clamshell and small volume chamber with fixed substrate support.
Rodiger Klaus,DEX ; Westphal Hartmut,DEX ; Dreyer Klaus,DEX ; Gerdes Thorsten,DEX ; Willert-Porada Monika,DEX, Composite body comprising a hard metal, cermet or ceramic substrate body and method of producing same.
Kai-Erik Elers FI; Suvi P. Haukka FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Deposition of transition metal carbides.
Umotoy Salvador ; Ku Vincent ; Yuan Xiaoxiong ; Lei Lawrence Chung-Lai, Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces.
Lee Woo-Hyeong ; Manchanda Lalita, Electronic components with doped metal oxide dielectric materials and a process for making electronic components with do.
Imai Masayuki (Kofu JPX) Nishimura Toshiharu (Kofu JPX), Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily.
Park In-seon,KRX ; Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Kim Byung-hee,KRX ; Lee Sang-min,KRX ; Park Chang-soo,KRX, Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature.
Nguyen, Anh N.; Yang, Michael X.; Xi, Ming; Chung, Hua; Chang, Anzhong; Yuan, Xiaoxiong; Lu, Siqing, Lid assembly for a processing system to facilitate sequential deposition techniques.
Senzaki Yoshihide ; Roberts David Allen ; Norman John Anthony Thomas, Liquid precursor mixtures for deposition of multicomponent metal containing materials.
Aucoin Thomas R. (Ocean NJ) Wittstruck Richard H. (Howell NJ) Zhao Jing (Ellicott MD) Zawadzki Peter A. (Plainfield NJ) Baarck William R. (Fair Haven NJ) Norris Peter E. (Cambridge MA), Method and apparatus for depositing a refractory thin film by chemical vapor deposition.
Albert Hasper NL; Frank Huussen NL; Cornelis Marinus Kooijman NL; Theodorus Gerardus Maria Oosterlaken NL; Jack Herman Van Putten NL; Christianus Gerardus Maria Ridder NL; Gert-Jan Snijders NL, Method and device for transferring wafers.
Alessandra Satta BE; Karen Maex BE; Kai-Erik Elers FI; Ville Antero Saanila FI; Pekka Juha Soininen FI; Suvi P. Haukka FI, Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
Matsumoto Tomotaka (Kawasaki JPX) Inoue Jun (Kawasaki JPX) Ichimura Teruhiko (Kawasaki JPX) Murata Yuji (Kawasaki JPX) Watanabe Junichi (Kawasaki JPX) Nagahiro Yoshio (Kawasaki JPX) Hodate Mari (Kawa, Method for forming a film and method for manufacturing a thin film transistor.
Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Park Chang-soo,KRX ; Kim Young-sun,KRX, Method for forming dielectric film of capacitor having different thicknesses partly.
Yun-sook Chae KR; In-sang Jeon KR; Sang-bom Kang KR; Sang-in Lee KR; Kyu-wan Ryu KR, Method of delivering gas into reaction chamber and shower head used to deliver gas.
Kang Sang-bom,KRX ; Lim Hyun-seok,KRX ; Chae Yung-sook,KRX ; Jeon In-sang,KRX ; Choi Gil-heyun,KRX, Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor.
Hyun-Seok Lim KR; Sang-Bom Kang KR; In-Sang Jeon KR; Gil-Heyun Choi KR, Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same.
Kang Sang-bom,KRX ; Park Chang-soo,KRX ; Chae Yun-sook,KRX ; Lee Sang-in,KRX, Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same.
Sang-bum Kang KR; Yun-sook Chae KR; Sang-in Lee KR; Hyun-seok Lim KR; Mee-young Yoon KR, Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same.
Yeong-Kwan Kim KR; Young-Wook Park KR; Seung-Hwan Lee KR, Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane.
Pekka J. Soininen FI; Kai-Erik Elers FI; Suvi Haukka FI, Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH.
Turner Norman L. (Mountain View CA) White John MacNeill (Los Gatos CA) Berkstresser David (Los Gatos CA), Method of heating and cooling large area glass substrates.
Nasu Yasuhiro (Sagamihara JPX) Okamoto Kenji (Hiratsuka JPX) Watanabe Jun-ichi (Kawasaki JPX) Endo Tetsuro (Atsugi JPX) Soeda Shinichi (Hiratsuka JPX), Method of manufacturing active matrix display device using insulation layer formed by the ale method.
Dautartas Mindaugas F. ; Manchanda Lalita, Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants.
Tasaki Yuzo,JPX ; Sato Mamoru,JPX ; Yoshizawa Shuji,JPX ; Onoe Atsushi,JPX ; Chikuma Kiyofumi,JPX ; Yoshida Ayako,JPX, Method of subliming material in CVD film preparation method.
Diem Michael (Orange CA) Fisk Michael A. (Anaheim CA) Goldman Jon C. (Orange CA), Process and apparatus for low pressure chemical vapor deposition of refractory metal.
Whinnery LeRoy Louis (Livermore CA) Nichols Monte Carl (Livermore CA) Wheeler David Roger (Albuquerque NM) Loy Douglas Anson (Albuquerque NM), Process for preparing silicon carbide foam.
Kai-Erik Elers FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Production of elemental thin films using a boron-containing reducing agent.
Mee-Young Yoon KR; Sang-In Lee KR; Hyun-Seok Lim KR, Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer.
Yasuhara, Sakiko; Kadokura, Hidekimi, TANTALUM TERTIARY AMYLIMIDO TRIS (DIMETHYLAMIDE), A PROCESS FOR PRODUCING THE SAME, A SOLUTION OF STARTING MATERIAL FOR MOCVD USING THE SAME, AND A METHOD OF FORMING A TANTALUM NITRIDE FILM USING THE.
Nakata Yukihiko,JPX ; Fujihara Masaki,JPX ; Date Masahiro,JPX ; Matsuo Takuya,JPX ; Ayukawa Michiteru,JPX ; Itoga Takashi,JPX, Thin-film semiconductor device including a semiconductor film with high field-effect mobility.
Nguyen, Son T.; Sangam, Kedarnath; Schwartz, Miriam; Choi, Kenric; Bhat, Sanjay; Narwankar, Pravin K.; Kher, Shreyas; Sharangapani, Rahul; Muthukrishnan, Shankar; Deaton, Paul, Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system.
Cao, Wei; Chung, Hua; Ku, Vincent W.; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
Cao, Wei; Chung, Hua; Ku, Vincent; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
Catto, Michael L.; Van Thorre, Douglas M., System and method using a horizontal sublimation chamber for production of fuel from a carbon-containing feedstock.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.