초록 ▼

A thermoelectric module having areas of highly thermally conductive material integrated into a substrate layer. For one embodiment copper pads are integrated into the external surface of the substrate of the hot side of the thermoelectric module. The copper pads allow direct connection of a heat rem

A thermoelectric module having areas of highly thermally conductive material integrated into a substrate layer. For one embodiment copper pads are integrated into the external surface of the substrate of the hot side of the thermoelectric module. The copper pads allow direct connection of a heat removal device to the thermoelectric module thereby reducing thermal resistance. Thermal vias may be formed through the substrate to further reduce thermal resistance.

대표청구항 ▼

What is claimed is: 1. A thermoelectric module comprising: an upper substrate having an upper internal surface and an upper external surface; a lower substrate having a lower internal surface and a lower external surface; a plurality of n-diode and p-diode pairs disposed between the lower internal

What is claimed is: 1. A thermoelectric module comprising: an upper substrate having an upper internal surface and an upper external surface; a lower substrate having a lower internal surface and a lower external surface; a plurality of n-diode and p-diode pairs disposed between the lower internal surface and the upper internal surface, electrically connected to effect cooling of the external surface of the lower substrate, wherein the upper external surface has areas of highly thermally conductive material integrated therein; and a heat removal device integrated directly to at least one of the areas of highly thermally conductive material into the upper external surface. 2. The thermoelectric module of claim 1 wherein the highly thermally conductive material is a highly thermally conductive metal. 3. The thermoelectric module of claim 2 wherein the highly thermally conductive metal is a metal selected from the group consisting of copper, aluminum, silver, copper-indium, silver-zinc, and multi-layers thereof. 4. The thermoelectric module of claim 1 wherein the heat removal device comprises one or more plate fins. 5. The thermoelectric module of claim 1 wherein the heat removal device comprises a plurality of pin fins. 6. The thermoelectric module of claim 1 wherein the heat removal device is a coolant-based device. 7. A thermoelectric module comprising: an upper substrate having an upper internal surface and an upper external surface; a lower substrate having a lower internal surface and a lower external surface; a plurality of n-diode and p-diode pairs disposed between the lower internal surface and the upper internal surface, electrically connected to effect cooling of the lower external surface, wherein the upper external surface has areas of highly thermally conductive material integrated therein; and one or more thermal vias extending from the upper external surface to the upper internal surface. 8. The thermoelectric module of claim 1 wherein the upper external surface has areas of highly thermally conductive material integrated therein. 9. A method comprising: providing a microelectronic device; attaching a cold side of a thermoelectric module to the microelectronic device to effect cooling of the microelectronic device, the thermoelectric module having areas of highly thermally conductive material integrated into an external surface of a hot side; and integrating a heat removal device directly to at least one of the areas of highly thermally conductive material. 10. The method of claim 9 wherein the highly thermally conductive material is a highly thermally conductive metal. 11. The method of claim 10 wherein the highly thermally conductive metal is a metal selected from the group consisting of copper, aluminum, silver, copper-indium, silver-zinc, and multi-layers thereof. 12. The method of claim 11 wherein the heat removal device comprises one or more plate fins. 13. The method claim 11 wherein the heat removal device is a plurality of pin fins. 14. The method of claim 11 wherein the heat removal device is a coolant-based device. 15. The method of claim 9 wherein the thermoelectric module has one or more thermal vias formed through a substrate comprising the hot side of the thermoelectric module. 16. The method of claim 9 wherein one or more thermal vias extend from the external surface of a substrate comprising the hot side of the thermoelectric module to an internal surface of the substrate comprising the hot side of the thermoelectric module. 17. The method of claim 9 wherein the microelectronic device has a metal casing and is bonded directly to areas of highly thermally conductive material integrated into an external surface of the cold side. 18. A system comprising: a thermoelectric module having areas of highly thermally conductive material integrated into a substrate comprising a hot side of the thermoelectric module; a processor mechanically coupled to a substrate comprising a cold side of the thermoelectric module; and a heat removal device directly integrated to at least one of the areas of highly thermally conductive material into the substrate comprising a hot side of the thermoelectric module. 19. The system of claim 18 wherein the highly thermally conductive material is a metal selected from the group consisting of copper, aluminum, silver, copper-indium, silver-zinc, and multi-layers thereof. 20. The system of claim 18 wherein the heat removal device comprises one or more plate fins. 21. The system of claim 18 wherein the heat removal device comprises a plurality of pin fins. 22. The system of claim 18 wherein the heat removal device is a coolant-based device. 23. The system of claim 18 wherein the thermoelectric module has one or more thermal vias formed through the substrate comprising the hot side of the thermoelectric module. 24. The system of claim 18 wherein the processor has a metal casing and is bonded directly to areas of highly thermally conductive material integrated into an external surface of the substrate comprising a cold side of the thermoelectric module. 25. The system of claim 24 wherein the thermoelectric module has one or more thermal vias formed through the substrate comprising the cold side of the thermoelectric module. 26. The thermoelectric module of claim 7 wherein the highly thermally conductive material is a highly thermally conductive metal. 27. The thermoelectric module of claim 7 wherein the highly thermally conductive metal is a metal selected from the group consisting of copper, aluminum, silver, copper-indium, silver-zinc, and multi-layers thereof.