IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0681891
(2001-06-21)
|
등록번호 |
US-7304276
(2007-12-04)
|
발명자
/ 주소 |
- Lin,Hongy
- Laskowski,Thomas M.
- Steinhauser,Louis P.
|
출원인 / 주소 |
- Watlow Electric Manufacturing Company
|
대리인 / 주소 |
Brinks Hofer Gilson & Lione
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
14 |
초록
▼
A thick film heater is shown wherein the thick film resistive circuit, as the heating element, is applied directly to a target object to be heated for very low temperature applications. The thick film used is polymer-based (preferably epoxy). The thick film resistive circuit is applied using convent
A thick film heater is shown wherein the thick film resistive circuit, as the heating element, is applied directly to a target object to be heated for very low temperature applications. The thick film used is polymer-based (preferably epoxy). The thick film resistive circuit is applied using conventional means. However, it is cured at higher temperatures and longer cycles than conventional thick film circuits, and preferably in multiple stages.
대표청구항
▼
The invention claimed is: 1. A method of manufacturing a thick film heater comprising a heating element applied directly to a surface of a target object, the method comprising the steps of: applying the heating element, comprising a thick film resistive circuit, directly to the surface of the targe
The invention claimed is: 1. A method of manufacturing a thick film heater comprising a heating element applied directly to a surface of a target object, the method comprising the steps of: applying the heating element, comprising a thick film resistive circuit, directly to the surface of the target object, wherein the thick film resistive circuit is made of a polymer-based ink; thermally curing the heating element for a first period of time in a standard curing cycle; sealing the heating element with a dielectric layer; and thermally post-curing the heating element and the dielectric layer for second a period of time in a post-curing cycle, the second period of time being longer than the first period of time. 2. The method of claim 1 further comprising the step of preparing the surface of the target object with a lower dielectric layer, and wherein the heating element in said applying step is applied over the lower dielectric layer. 3. The method of claim 1 wherein said curing step in said standard curing cycle occurs at a temperature of 200째 C. or greater. 4. The method of claim 1 wherein said first period of time occurs for a period of two hours or longer. 5. The method of claim 1 wherein the heating element is designed to operate at greater than 15 W/cm2. 6. The method of claim 1 wherein the target object is non-ferrous. 7. The method of claim 6 wherein the target object is aluminum. 8. The method of claim 5 wherein the target object is copper. 9. The method of claim 6 wherein the target object is ceramic. 10. The method of claim 1 wherein the target object comprises high-expansion steel. 11. The method of claim 1 wherein the polymer-based ink of the thick firm resistive circuit comprises an epoxy. 12. The method of claim 10 wherein the polymer-based ink contains silver particles. 13. A thick film heater comprising: a target object to be heated; a heating element comprising a polymer-based electrically thick film resistive circuit, the heating element being applied to a surface of the target object, the heating element being thermally cured for a first period of time in a standard curing cycle; and a dielectric layer applied over the heating element, the heating element and the dielectric layer being thermally cured for a second period of time in a post-curing cycle, the second period of time being longer than the first period of time. 14. The thick film heater of claim 13, wherein the first period of time is at least thirty minutes and the second period of time exceeds sixty minutes. 15. The thick film heater of claim 13, wherein the heating element is cured in the standard curing cycle at a temperature of at least 150째 C., and wherein the heating element and the dielectric layer are cured in the post-curing cycle at a temperature of at least 200째 C. 16. The thick film heater of claim 15, wherein the second period of lime is at least two and a half hours. 17. The thick film heater of claim 16, wherein the second period of time is at least four hours. 18. The thick film heater of claim 14, wherein the heating element is cured in the standard curing cycle at a temperature of at least 150째 C., the heating element and the dielectric layer are cured in the post-curing cycle at a temperature of at least 150째 C., and the second period of time is at least three hours. 19. The thick film heater of claim 15, wherein the heating element and the dielectric layer are cured in the post-curing cycle at a temperature of at least 225째 C., and the second period of time is at least two hours. 20. The thick film heater of claim 13, wherein the heating element is capable of heat flux at least as great as 200 Watts per square inch. 21. The thick film heater of claim 13, wherein the target object is non-ferrous. 22. The thick film heater of claim 21, wherein the target object is comprised of a material selected from the group consisting of: aluminum, copper, and ceramic. 23. The thick film heater of claim 13, wherein the target object comprises high-expansion steel. 24. The thick film heater of claim 13, wherein the heating element further comprises a base dielectric layer disposed between the target object and the electrically resistive circuit. 25. The thick film heater of claim 24, wherein the base dielectric layer consists of a metal oxide selected from the group consisting of Ti2, SiO2, and AI2O3. 26. The thick firm heater of claim 1, wherein the curing step occurs at a temperature of at least 150째 C. and the first time period is at least thirty minutes. 27. The method of claim 26, wherein the post-curing step occurs at a temperature of at least 200째 C. 28. The method of claim 27, wherein the second period of time exceeds sixty minutes. 29. The method of claim 27, wherein the second period of time is at least two and a half hours. 30. The method of claim 27, wherein the second period of time is at least four hours. 31. The method of claim 26, wherein the post-curing step occurs at a temperature of at least 150째 C., and the second period of time is at least three hours. 32. The method of claim 27, wherein the post-curing step occurs at a temperature of at least 225째 C., and the second period of time is at least two hours.
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