Thermal transfer device and system and method incorporating same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
F25B-021/00
F25B-049/00
출원번호
US-0880807
(2004-06-30)
등록번호
US-7305839
(2007-12-11)
발명자
/ 주소
Weaver, Jr.,Stanton Earl
출원인 / 주소
General Electric Company
대리인 / 주소
Fletcher Yoder
인용정보
피인용 횟수 :
21인용 특허 :
36
초록▼
A thermal transfer device having a first substrate layer, a second substrate layer and first and second electrodes disposed between the first substrate layer and the second substrate layer. The thermal transfer device also includes a release layer disposed between the first electrode and the second
A thermal transfer device having a first substrate layer, a second substrate layer and first and second electrodes disposed between the first substrate layer and the second substrate layer. The thermal transfer device also includes a release layer disposed between the first electrode and the second electrode and an actuator disposed adjacent the first and second electrodes. The actuator is adapted to separate the first and second electrodes from the release layer to open a thermotunneling gap between the first and second electrodes, and wherein the actuator is adapted to actively control the thermotunneling gap.
대표청구항▼
The invention claimed is: 1. A thermal transfer device comprising: a first substrate layer; a second substrate layer; a first electrode disposed between the first substrate layer and the second substrate layer; a second electrode disposed between the first substrate layer and the second substrate l
The invention claimed is: 1. A thermal transfer device comprising: a first substrate layer; a second substrate layer; a first electrode disposed between the first substrate layer and the second substrate layer; a second electrode disposed between the first substrate layer and the second substrate layer; a release layer disposed between the first electrode and the second electrode; and an actuator disposed adjacent the first and second electrodes, wherein the actuator is adapted to separate the first and second electrodes from the release layer to open a thermotunneling gap between the first and second electrodes, and wherein the actuator is adapted to actively control the thermotunneling gap. 2. The device of claim 1, wherein the first substrate layer is disposed above the second substrate layer, the first electrode is disposed below the second electrode, and the actuator is disposed below the second electrode and the thermotunneling gap. 3. The device of claim 1, wherein the first substrate layer is disposed above the second substrate layer, the first electrode is disposed above the second electrode, and the actuator comprises at least one actuator mechanism disposed on each peripheral side of the thermotunneling gap between the first and second substrate layers. 4. The device of claim 1, wherein the actuator and portions of the first and second electrodes having the thermotunneling gap are hermetically sealed within a chamber between the first and second substrate layers. 5. The device of claim 4, wherein the chamber is in vacuum. 6. The device of claim 1, wherein the actuator is coupled to an input voltage source adapted to operate the thermal transfer device at an initial tunneling set point. 7. The device of claim 1, comprising a feedback mechanism operatively coupled to the actuator, wherein the feedback mechanism is adapted to measure a tunneling cuffent across the first electrode and the second electrode. 8. The device of claim 1, comprising a processor adapted to provide a position of the first electrode and the second electrode to the actuator based upon a measured tunneling current across the first electrode and the second electrode. 9. The device of claim 1, wherein at least one of the first and second substrate layers comprises a thermally conductive material. 10. The device of claim 9, wherein the thermally conductive material comprises ceramic. 11. The device of claim 1, wherein the at least one of the first and second substrate layers has an adjacent one of the first and second electrodes plated onto the thermally conductive material. 12. The device of claim 1, wherein at least one of the first and second substrate layers comprises a thermally insulating material disposed about a thermally conductive material in thermal communication with an adjacent one of the first and second electrodes. 13. The device of claim 12, wherein the thermally insulating layer comprises epoxy. 14. The device of claim 12, wherein the thermally conductive material comprises copper. 15. The device of claim 12, wherein the thermally conductive material comprises a plurality of thermal vias distributed in the thermally insulating material. 16. The device of claim 12, wherein the at least one of the first and second substrate layers comprises a central portion and opposite outer portions, the central portion comprising the thermally conductive material and the opposite outer portions comprising the thermally insulating material. 17. The device of claim 16, wherein the at least one of the first and second substrate layers comprises a thermal break portion between the central portion and each of the opposite outer portions. 18. The device of claim 1, wherein at least one of the first and second electrodes comprises a carbon nanotube layer. 19. The device of claim 1, wherein at least one of the first and second electrodes comprises copper. 20. The device of claim 1, wherein the release layer comprises a non oxidizing noble metal. 21. The device of claim 1, wherein the release layer comprises gold. 22. The device of claim 1, wherein the actuator comprises a piezoelectric mechanism. 23. The device of claim 1, wherein the actuator comprises a magnetic repulsion mechanism. 24. The device of claim 1, wherein the actuator comprises an electrostatic mechanism. 25. The device of claim 1, wherein the actuator comprises an acoustic actuator. 26. The device of claim 1, wherein the actuator comprises a Micro-Electro-Mechanical System (MEMS) device. 27. A thermal transfer device, comprising: a first thermally conductive substrate layer; a second thermally conductive substrate layer disposed below the first thermally conductive substrate layer; a first electrode disposed between the first thermally conductive substrate layer and the second thermally conductive substrate layer; a second electrode disposed between the first thermally conductive substrate layer and the second thermally conductive substrate layer, wherein the second electrode is disposed above the first electrode; a release layer disposed between the first electrode and the second electrode; and an actuator disposed below the second electrode, wherein the actuator is adapted to separate the release layer between the first and second electrodes to provide a thermotunneling gap between the first and second electrodes, and wherein the actuator is adapted to actively control the thermotunneling gap. 28. The device of claim 27 comprising a sealant layer disposed between the first and second thermally conductive substrate layers at an outer periphery surrounding the thermotunneling gap. 29. The device of claim 28, wherein the sealant layer comprises frit glass. 30. The device of claim 28, wherein the sealant layer comprises solder. 31. The device of claim 30, wherein the chamber is in vacuum. 32. The device of claim 27, wherein the actuator is coupled to an input voltage source adapted to operate the thermal transfer device at an initial tunneling set point. 33. The device of claim 27, wherein at least one of the first and second thermally conductive substrate layers comprises a ceramic. 34. The device of claim 27, wherein the actuator and portions of the first and second electrodes having the thermotunneling gap are hermetically sealed within a chamber between the first and second thermally conductive substrate layers. 35. The device of claim 27, wherein at least one of the first and second electrodes comprises a carbon nanotube layer. 36. The device of claim 27, wherein at least one of the first and second electrodes comprises copper. 37. The device of claim 27, wherein the release layer comprises a nonoxidizing noble metal. 38. The device of claim 27, wherein the release layer comprises gold. 39. The device of claim 27, wherein the actuator comprises a piezoelectric mechanism. 40. The device of claim 27, wherein the actuator comprises a magnetic repulsion mechanism. 41. The device of claim 27, wherein the actuator comprises an electrostatic mechanism. 42. The device of claim 27, wherein the actuator comprises an acoustic actuator. 43. The device of claim 27, wherein the actuator comprises a MEMS device. 44. The device of claim 27, comprising first and second actuator electrodes disposed between the first and second thermally conductive substrate layers and extending to the actuator. 45. The device of claim 27, wherein at least one of the first and second thermally conductive substrate layers comprises a copper spreader disposed in thermal communication with an adjacent one of the first and second electrodes. 46. The device of claim 45, comprising a thermal break extending between the copper spreader and the at least one of the first and second thermally conductive substrate layers. 47. The device of claim 46, wherein the thermal break comprises glass.
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