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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0711649 (2004-09-29) |
등록번호 | US-7307019 (2007-12-11) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 1 인용 특허 : 343 |
A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surf
A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.
What is claimed is: 1. A method of processing a dielectric film, the method comprising: providing a substrate having a fluoro-carbon dielectric film deposited thereon, the film having an exposed surface containing contaminants; and treating the exposed surface with a supercritical carbon dioxide fl
What is claimed is: 1. A method of processing a dielectric film, the method comprising: providing a substrate having a fluoro-carbon dielectric film deposited thereon, the film having an exposed surface containing contaminants; and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination, wherein the supercritical carbon dioxide fluid further comprises a solvent, and wherein the solvent comprises an alcohol or a silicon-containing chemical, or a combination thereof. 2. The method according to claim 1, wherein the contaminants comprise CHx, H2O, OH, or HF, or a combination of two or more thereof. 3. The method according to claim 1, wherein the alcohol comprises methanol, ethanol, propanol, or butanol, or a combination of two or more thereof. 4. The method according to claim 1, wherein the silicon-containing chemical comprises hexamethyldisilane, hexamethyldisilazane, dimethylsilyldiethylamine, tetramethyldisilazane, trimethylsilyldimethylamine, dimethylsilyldimethylamine, trimethylsilyldiethylamine, bis-trimethylsilyl-urea, bis(dimethylamino)methyl silane, bis(dimethylamino)dimethyl silane, dimethylaminopentamethyldisilane, or dimethylaminodimethyldisilane, or a combination of two or more thereof. 5. The method according to claim 1, wherein the surface termination comprises C--F functional groups or Si-Me3 functional groups. 6. The method according to claim 1, wherein the treating comprises: performing a first treatment wherein the supercritical carbon dioxide fluid contains the alcohol solvent; and performing a second treatment wherein the supercritical carbon dioxide fluid contains a the silicon-containing chemical solvent. 7. The method according to claim 6, wherein the alcohol comprises methanol, ethanol, propanol, or butanol, or a combination of two or more thereof. 8. The method according to claim 6, wherein the silicon-containing chemical comprises hexamethyldisilane, hexamethyldisilazane, dimethylsilyldiethylamine, tetramethyldisilazane, trimethylsilyldimethylamine, dimethylsilyldimethylamine, trimethylsilyldiethylamine, bis-trimethylsilyl-urea, bis(dimethylamino)methyl silane, bis(dimethylamino)dimethyl silane, dimethylaminopentamethyldisilane, or dimethylaminodimethyldisilane, or a combination of two or more thereof. 9. The method according to claim 1, wherein the fluoro-carbon film comprises a nitrated fluoro-carbon film. 10. The method according to claim 1, further comprising: depositing a metal-containing film onto the treated surface of the fluoro-carbon film, wherein the surface termination improves adhesion of the metal-containing film to the fluoro-carbon film. 11. The method according to claim 10, wherein the metal-containing film comprises tantalum. 12. A method of processing a dielectric film, the method comprising: providing a substrate having a patterned fluoro-carbon dielectric film formed thereon, the patterned fluoro-carbon dielectric film having one or more vias or trenches, or a combination thereof, and the patterned fluoro-carbon dielectric film having an exposed surface containing contaminants; and treating the exposed surface with a supercritical carbon dioxide fluid and a solvent to clean the exposed surface of the contaminants and provide surface termination. 13. The method according to claim 12, wherein the contaminants comprise CHx, H2O, OH, or HF, or a combination of two or more thereof. 14. The method according to claim 12, wherein the solvent comprises an alcohol or a silicon-containing chemical, or a combination thereof. 15. The method according to claim 14, wherein the alcohol comprises methanol, ethanol, propanol, or butanol, or a combination of two or more thereof. 16. The method according to claim 14, wherein the silicon-containing chemical comprises hexamethyldisilane, hexamethyldisilazane, dimethylsilyldiethylamine, tetramethyldisilazane, trimethylsilyldimethylamine, dimethylsilyldimethylamine, trimethylsilyldiethylamine, bis-trimethylsilyl-urea, bis(dimethylamino)methyl silane, bis(dimethylamino)dimethyl silane, dimethylaminopentamethyldisilane, dimethylaminodimethyldisilane, or a combination of two or more thereof. 17. The method according to claim 12, wherein the surface termination comprises C--F functional groups or Si-Me3 functional groups. 18. The method according to claim 12, wherein the treating comprises: performing a first treatment wherein the supercritical carbon dioxide fluid contains an alcohol as the solvent; and performing a second treatment wherein the supercritical carbon dioxide fluid contains a silicon-containing chemical as the solvent. 19. The method according to claim 18, wherein the alcohol comprises methanol, ethanol, propanol, or butanol, or a combination of two or more thereof. 20. The method according to claim 18, wherein the silicon-containing chemical comprises hexamethyldisilane, hexamethyldisilazane, dimethylsilyldiethylamine, tetramethyldisilazane, trimethylsilyldimethylamine, dimethylsilyldimethylamine, trimethylsilyldiethylamine, bis-trimethylsilyl-urea, bis(dimethylamino)methyl silane, bis(dimethylamino)dimethyl silane, dimethylaminopentamethyldisilane, or dimethylaminodimethyldisilane, or a combination of two or more thereof. 21. The method according to claim 12, wherein the fluoro-carbon film comprises a nitrated fluoro-carbon film. 22. The method according to claim 12, further comprising: depositing a metal-containing film onto the treated surface of the fluoro-carbon film, wherein the surface termination improves adhesion of the metal-containing film to the fluoro-carbon film. 23. The method according to claim 22, wherein the metal-containing film comprises tantalum.
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