[특허]Versatile method and system for single mode VCSELs

[미국특허] Versatile method and system for single mode VCSELs 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01S-005/00
출원번호	US-0617892 (2003-07-11)
등록번호	US-7308011 (2007-12-11)
발명자 / 주소	Johnson,Ralph H. Morales,Gilberto
출원인 / 주소	Finisar Corporation
대리인 / 주소	Workman Nydegger
인용정보	피인용 횟수 : 0 인용 특허 : 158

초록 ▼

A single mode VCSEL including a substrate having a lower surface and an upper surface, a bottom electrical contact disposed along the lower surface of the substrate, a lower mirror portion disposed upon the upper surface of the substrate, an active region disposed upon the lower mirror portion, an upper mirror portion disposed upon the active region, an equipotential layer disposed upon the upper mirror portion, an insulating layer interposed between the upper mirror portion and the equipotential layer and adapted to form an aperture therebetween, and an upper contact portion disposed upon the equipotential layer outside the perimeter of the aperture.

대표청구항 ▼

The invention claimed is: 1. An optoelectronic device, comprising: a first mirror; a second mirror; an active region situated between the first mirror and the second mirror; a substantially equipotential layer; and an insulation layer defining an aperture that encircles an optical cavity of the optoelectronic device, the insulation layer situated between the second mirror and the substantially equipotential layer such that the second mirror and the substantially eguipotential layer are separated from each other. 2. An optoelectronic device according to claim 1 wherein the substantially equipotential layer has a conductance in a range of about four (4) to about ten (10) times a conductance of the second mirror. 3. An optoelectronic device according to claim 1 wherein the aperture of the insulation layer includes a tapered tip. 4. An optoelectronic device according to claim 3 wherein the tapered tip is positioned at or near an electric field null. 5. An optoelectronic device according to claim 1 wherein the substantially equipotential layer comprises a DBR mirror structure. 6. An optoelectronic device according to claim 1 wherein an output of the optical cavity comprises a substantially single mode output. 7. An optoelectronic device according to claim 1, further comprising an upper contact portion disposed upon the equipotential layer outside the perimeter of the aperture. 8. An optoelectronic device according to claim 7, wherein the upper contact portion comprises first and second upper contact portions that are distally separated from each other by a span. 9. An optoelectronic device according to claim 8, wherein the span is relatively larger than the aperture. 10. An optoelectronic device according to claim 8, wherein the span is relatively smaller than the aperture. 11. An optoelectronic device according to claim 8, wherein at least one dielectric layer is disposed along the span on the substantially equipotential layer. 12. An optoelectronic device according to claim 11, wherein the at least one dielectric layer comprises two dielectric layers whose combined thickness is a multiple of one half a wavelength of light sourced by the optoelectronic device. 13. A single mode vertical cavity surface emitting laser (VCSEL), comprising: a substrate having a lower surface and an upper surface; a bottom electrical contact disposed along the lower surface of the substrate; a lower mirror portion disposed upon the upper surface of the substrate; an active region disposed upon the lower mirror portion; an upper mirror portion disposed upon the active region; an equipotential layer disposed upon the upper mirror portion; an insulating layer interposed between the upper mirror portion and the equipotential layer and adapted to form an aperture therebetween; and an upper contact portion disposed upon the equipotential layer outside the perimeter of the aperture. 14. A VCSEL according to claim 13, further comprising: an isolation region disposed beneath the upper contact portion and traversing the equipotential layer, the upper mirror portion, the active region, and the lower mirror portion; and a second isolation region disposed beneath the second upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror. 15. A VCSEL according to claim 13, wherein the lower mirror portion is formed of n-type material. 16. A VCSEL according to claim 13, wherein the active region has a plurality of quantum wells. 17. A VCSEL according to claim 13, wherein the upper mirror portion is formed from an electrically isotropic material. 18. A VCSEL according to claim 13, wherein the upper contact portion covers less than the entire equipotential layer, the VCSEL further comprising: a first dielectric layer disposed upon the portion of the equipotential layer that is not covered by the upper contact portion; and a second dielectric layer disposed upon the first dielectric layer. 19. A VCSEL according to claim 18, wherein the second dielectric layer is substantially aligned with the aperture.

이 특허에 인용된 특허 (158) 인용/피인용 타임라인 분석

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Wang Shih-Yuan ; Tan Michael R. T. ; Holland William D. ; Ertel John P. ; Corzine Scott W., Vertical-cavity surface-emitting laser generating light with a defined direction of polarization.
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Jewell Jack L. (Boulder CO) Olbright Gregory (Boulder CO), Vertical-cavity surface-emitting lasers with intra-cavity structures.
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Kobayashi Yasuhiro (Osaka JPX) Chino Toyoji (Toyonaka JPX) Matsuda Kenichi (Moriguchi JPX), Vertical-cavity surface-emitting semiconductor laser.
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Bryan Robert P. (Boulder CO) Olbright Gregory R. (Boulder CO) Lott James A. (Albuquerque NM) Schneider ; Jr. Richard P. (Albuquerque NM), Visible light emitting vertical cavity surface emitting lasers.
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Olbright Gregory R. (Boulder CO) Jewell Jack L. (Boulder CO), Visible light surface emitting semiconductor laser.
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Olbright Gregory R. (Boulder CO) Jewell Jack L. (Bridgewater NJ), Visible light surface emitting semiconductor laser.
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Schneider ; Jr. Richard P. (Albuquerque NM) Crawford Mary H. (Albuquerque NM), Visible-wavelength semiconductor lasers and arrays.
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Kish Fred A. (San Jose CA) Steranka Frank M. (San Jose CA) DeFevere Dennis C. (Palo Alto CA) Robbins Virginia M. (Los Gatos CA) Uebbing John (Palo Alto CA), Wafer bonding of light emitting diode layers.
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Thornton Robert L., Wavelength and polarization multiplexed vertical cavity surface emitting lasers.
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MacDonald Robert I. (Ottawa CAX), Wavelength selective optical coupler.
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Yu-Hwa Lo ; Steven Gregg Hummel ; Chenting Lin ; Chau-Hong Kuo ; Mei-Ling Shek-Stefan ; Sergey V. Zaytsev, Wavelength-tunable semiconductor laser diode.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

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[미국특허] Versatile method and system for single mode VCSELs 원문보기

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[미국특허] Versatile method and system for single mode VCSELs 원문보기

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