초록 ▼

A semiconductor device includes a substrate, at least one layer of functional devices formed on the substrate, a first dielectric layer formed over the functional device layer and a first trench/via located in the first dielectric layer. A copper conductor fills the first trench/via. An electromigra

A semiconductor device includes a substrate, at least one layer of functional devices formed on the substrate, a first dielectric layer formed over the functional device layer and a first trench/via located in the first dielectric layer. A copper conductor fills the first trench/via. An electromigration inhibiting barrier layer is selectively located over a surface of the copper conductor and not any other remaining exposed surface. An insulating cap layer overlies the barrier layer and the remaining exposed surface. A second dielectric layer overlies the insulating cap layer. A second trench/via is located in the second dielectric layer and extends through the insulating cap layer and the barrier layer. A micro-trench is located within the first dielectric layer and is associated with the formation of the second trench/via. The micro-trench exposes a portion of the copper conductor. A filler fills the micro-trench. The filler is formed from a material used to form the electromigration inhibiting barrier layer.

대표청구항 ▼

The invention claimed is: 1. A semiconductor device, comprising: a substrate; at least one layer of functional devices formed on the substrate; a first dielectric layer formed over the functional device layer; a first trench/via located in the first dielectric layer; a copper conductor filling the

The invention claimed is: 1. A semiconductor device, comprising: a substrate; at least one layer of functional devices formed on the substrate; a first dielectric layer formed over the functional device layer; a first trench/via located in the first dielectric layer; a copper conductor filling the first trench/via; an electromigration inhibiting barrier layer selectively located over a surface of the copper conductor and not any other remaining exposed surface; an insulating cap layer overlying the barrier layer and the remaining exposed surface; a second dielectric layer overlying the insulating cap layer; a second trench/via located in the second dielectric layer and extending through the insulating cap layer and the barrier layer; a micro-trench located within the first dielectric layer and associated with formation of the second trench/via, said micro-trench exposing a portion of the copper conductor; and a filler filling the micro-trench, said filler being formed from a material used to form the electromigration inhibiting barrier layer. 2. The semiconductor device of claim 1 wherein said material forming the filler is a material that allows formation of the barrier layer and the filler by electroless deposition on copper. 3. The semiconductor device of claim 1 wherein said material forming the filler is a material that allows formation of the barrier layer and the filler by electroless deposition on copper with activation of a copper surface layer. 4. The semiconductor device of claim 1 wherein said material forming the filler is CoWP. 5. The semiconductor device of claim 1 wherein said material forming the filler is a cobalt alloy. 6. The semiconductor device of claim 1 wherein said material forming the filler is a nickel alloy. 7. The semiconductor device of claim 1 wherein said material forming the filler is selected from the group consisting of CoP, CoB, CoW, CoMo, CoWB, CoMoP, CoMoB, NiWP, NiWB, NiMoP, and NiMoB. 8. The semiconductor device of claim 1 wherein said insulating cap layer has a thickness less than about 300 angstroms. 9. The semiconductor device of claim 1 wherein said insulating cap layer has a thickness between about 50 and 300 angstroms. 10. The semiconductor device of claim 1 wherein said first and second dielectric layers are formed from a low-k dielectric material. 11. The semiconductor device of claim 1 further comprising a liner located between the copper conductor and sidewalls of the trench/via. 12. A method of forming a semiconductor device, comprising: forming at least one layer of functional devices on a substrate; forming a first dielectric layer over the functional device layer; etching a first trench/via located in the first dielectric layer; depositing a copper conductor to fill the first trench/via; forming an electromigration inhibiting barrier layer over a surface of the copper conductor and not any other remaining exposed surface; forming an insulating cap layer overlying the barrier layer and the remaining exposed surface; forming a second dielectric layer overlying the insulating cap layer; etching a second trench/via located in the second dielectric layer that extends through the insulating cap layer and the barrier layer, wherein said second trench/via etching step includes the step of etching a micro-trench located within the first dielectric layer, said micro-trench exposing a portion of the copper conductor; and filling the micro-trench with a material used to form the electromigration inhibiting barrier layer. 13. The method of claim 12 wherein said material forming the filler is a material that allows formation of the barrier layer and the filler by electroless deposition on copper. 14. The method of claim 12 wherein said material forming the filler is a material that allows formation of the barrier layer and the filler by electroless deposition on copper with activation of a copper surface layer. 15. The method of claim 12 wherein said material forming the filler is CoWP. 16. The method of claim 12 wherein said material forming the filler is a cobalt alloy. 17. The method of claim 12 wherein said material forming the filler is a nickel alloy. 18. The method of claim 12 wherein said material forming the filler is selected from the group consisting of CoP, CoB, CoW, CoMo, CoWB, CoMoP, CoMoB, NiWP, NiWB, NiMoP, and NiMoB. 19. The method of claim 12 wherein said insulating cap layer has a thickness less than about 300 angstroms. 20. The method of claim 12 wherein said insulating cap layer has a thickness between about 50 and 300 angstroms. 21. The method of claim 12 wherein said first and second dielectric layers are formed from a low-k dielectric material. 22. The method of claim 12 further comprising the step of forming a liner located between the copper conductor and sidewalls of the trench/via.