IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
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| 국제특허분류(IPC7판) |
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| 출원번호 |
US-0243768
(2005-10-05)
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| 등록번호 |
US-7332031
(2008-02-19)
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발명자
/ 주소 |
- Tischler,Michael A.
- Kuech,Thomas F.
- Vaudo,Robert P.
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| 출원인 / 주소 |
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| 대리인 / 주소 |
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| 인용정보 |
피인용 횟수 :
5 인용 특허 :
61 |
초록
▼
A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from th
A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.
대표청구항
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What is claimed is: 1. A method of making a free-standing III-V nitride single crystal article, comprising: growing single crystal III-V nitride material, on and across a surface of a heterogeneous substrate having a diameter or corresponding dimension in an x,y plane of the surface that is at leas
What is claimed is: 1. A method of making a free-standing III-V nitride single crystal article, comprising: growing single crystal III-V nitride material, on and across a surface of a heterogeneous substrate having a diameter or corresponding dimension in an x,y plane of the surface that is at least 2.5 centimeters, to a thickness of at least 100 micrometers, by a vapor deposition process conducted at elevated growth temperature; and removing the heterogeneous substrate from the single crystal III-V nitride material grown to said thickness, while the single crystal III-V nitride material is at temperature within 300�� C. of said elevated growth temperature and prior to cooling of said single crystal III-V nitride material to temperature more than 300�� C. below said elevated growth temperature, to yield a free-standing III-V nitride single crystal article having a diameter or corresponding dimension in an x,y plane that is at least 2.5 centimeters, and is at least 100 micrometers in thickness. 2. The method of claim 1, wherein the single crystal III-V nitride material is grown to a thickness that is substantially greater than thickness of said heterogeneous substrate. 3. The method of claim 1, wherein said elevated growth temperature comprises temperature in a range of 800 to 1300�� C. 4. The method of claim 1, wherein the free-standing III-V nitride single crystal article has a diameter or corresponding dimension in an x,y plane that is greater than 10 inches. 5. The method of claim 1, wherein the vapor deposition process is conducted at subatmospheric pressure. 6. The method of claim 1, wherein the subatmospheric pressure is in a range of from 1 millitorr to about 1 atmosphere. 7. The method of claim 1, wherein the subatmospheric pressure is in a range of from 1 millitorr to about 100 torr. 8. The method of claim 1, wherein the subatmospheric pressure is in a range of from 1 millitorr to about 1000 millitorr. 9. The method of claim 1, further comprising fabricating a microelectronic structure on the free-standing III-V nitride single crystal article. 10. The method of claim 1, wherein said III-V nitride is gallium nitride. 11. The method of claim 10, wherein said free-standing III-V nitride single crystal article has a diameter or corresponding dimension in an x,y plane that is in a range of from 3 inches to 18 inches. 12. The method of claim 1, wherein the heterogeneous substrate comprises material selected from the group consisting of silicon, silicon carbide, gallium arsenide, sapphire, magnesium aluminate, magnesium oxide, scandium aluminum magnesiate, lithium aluminate, lithium gallate, zinc oxide, graphite, glass, metal nitride, and silicon dioxide. 13. The method of claim 1, wherein the heterogeneous substrate comprises a substrate selected from the group consisting of silicon-on-insulator substrates, compliant substrates, substrates containing implant species, and twist-bonded substrates. 14. The method of claim 1, wherein the heterogeneous substrate is positioned between a growth chamber adapted to carry out said growing, and a removal chamber adapted to carry out said removing, and wherein said growing is conducted for sufficient time to grow said single crystal III-V nitride material over edges of the surface of said heterogeneous substrate to enhance sealing between the growth chamber and the removal chamber. 15. The method of claim 14, wherein pressure in the growth chamber is equal to or less than pressure in the removal chamber during said growing. 16. The method of claim 15, wherein pressure in the growth chamber is equal to or greater than pressure in the removal chamber during said removing. 17. The method of claim 1, wherein said removing comprises chemical action on the heterogeneous substrate. 18. The method of claim 17, wherein said chemical action comprises use of hydrogen chloride or hydrogen fluoride. 19. The method of claim 1, wherein said growing is carried out with diffusion of species from the heterogeneous substrate into the III-V nitride material for doping thereof. 20. The method of claim 19, wherein the heterogeneous substrate comprises silicon, and the III-V nitride single crystal article is silicon-doped. 21. The method of claim 1, wherein the heterogeneous substrate contains implanted hydrogen, and said removing includes fracturing the substrate from the III-V nitride material by in situ pressure building at elevated temperature in the heterogeneous substrate. 22. The method of claim 21, wherein said fracturing is conducted during said growing of single crystal III-V nitride material on the heterogeneous substrate. 23. The method of claim 21, wherein said fracturing is conducted after said growing of single crystal III-V nitride material on the heterogeneous substrate. 24. The method of claim 1, further comprising doping of the single crystal III-V nitride material during said growing. 25. The method of claim 24, wherein said doping comprises doping with at least one dopant species selected from the group consisting of Si, Ge, S, Se, Mg, Zn, Be, V and Fe. 26. The method of claim 1, further comprising fabricating a light emitting diode on said free-standing III-V nitride single crystal article. 27. The method of claim 14, wherein the heterogeneous substrate is disposed in a wafer carrier between the growth chamber and the removal chamber. 28. The method of claim 27, wherein said removing comprises exposure of the heterogeneous substrate to a halogen-containing gas in the removal chamber. 29. The method of claim 1, wherein the III-V nitride material comprises GaN and the heterogeneous substrate comprises sapphire. 30. The method of claim 1, comprising removing the heterogeneous substrate from the single crystal III-V nitride material grown to said thickness, while the single crystal III-V nitride material is at temperature within 100�� C. of said elevated growth temperature and prior to cooling of said single crystal III-V nitride material to temperature more than 100�� C. below said elevated growth temperature. 31. The method of claim 1, comprising removing the heterogeneous substrate from the single crystal III-V nitride material grown to said thickness, while the single crystal III-V nitride material is at temperature within 50�� C. of said elevated growth temperature and prior to cooling of said single crystal III-V nitride material to temperature more than 50�� C. below said elevated growth temperature. 32. The method of claim 1, comprising removing the heterogeneous substrate from the single crystal III-V nitride material grown to said thickness, while the single crystal III-V nitride material is at temperature within 25�� C. of said elevated growth temperature and prior to cooling of said single crystal III-V nitride material to temperature more than 25�� C. below said elevated growth temperature. 33. The method of claim 1, wherein said removing comprises use of plasma. 34. The method of claim 1, wherein said removing comprises use of laser radiation.
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