Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-016/00
C23C-016/52
F17D-001/02
F17D-001/00
B05C-011/00
출원번호
US-0423711
(2003-04-24)
등록번호
US-7335396
(2008-02-26)
발명자
/ 주소
Carpenter,Craig M.
Dynka,Danny
출원인 / 주소
Micron Technology, Inc.
대리인 / 주소
Perkins Coie LLP
인용정보
피인용 횟수 :
15인용 특허 :
290
초록▼
Methods, apparatuses, and systems for controlling mass flow rates and pressures in passageways coupled to reaction chambers are disclosed herein. In one embodiment, a method includes controlling a mass flow rate in a passageway in response to a first condition by modulating a valve of a mass flow a
Methods, apparatuses, and systems for controlling mass flow rates and pressures in passageways coupled to reaction chambers are disclosed herein. In one embodiment, a method includes controlling a mass flow rate in a passageway in response to a first condition by modulating a valve of a mass flow and pressure control unit, and controlling a pressure in the passageway in response to a second condition different than the first condition by modulating the valve of the mass flow and pressure control unit. In another embodiment, an apparatus includes a mass flow measurement device, a pressure sensor, a modulating valve in the passageway, and a controller operably coupled to the mass flow measurement device, the pressure sensor, and the modulating valve. The controller has a computer-readable medium containing instructions to perform the above-mentioned method.
대표청구항▼
We claim: 1. A method for controlling a vapor deposition process in a reaction chamber, the method comprising: positioning a first valve upstream a second valve in a passageway, the second valve being upstream the processing chamber; receiving an electrical signal from the second valve, the electri
We claim: 1. A method for controlling a vapor deposition process in a reaction chamber, the method comprising: positioning a first valve upstream a second valve in a passageway, the second valve being upstream the processing chamber; receiving an electrical signal from the second valve, the electrical signal indicating a position of the second valve; if the monitored electrical signal indicates that the second valve is substantially closed, regulating a pressure in the passageway to a predetermined pressure setpoint; and if the monitored electrical signal indicates that the second valve is at least partially open, regulating a mass flow rate in the passageway to a predetermined mass flow rate setpoint, wherein the first valve is modulated to alternatively regulate the pressure in the passageway to the predetermined pressure setpoint or to regulate the mass flow rate in the passageway to the predetermined mass flow rate setpoint. 2. The method of claim 1, further comprising: determining the pressure in the passageway; and wherein regulating a mass flow rate comprises modulating the first valve to control the mass flow rate when the second valve is in the at least partially open position and when the determined pressure in the passageway is less than or equal to a predetermined pressure. 3. The method of claim 1, further comprising: determining the pressure in the passageway; and determining the mass flow rate in the passageway; wherein regulating a pressure comprises modulating the first valve in response to the determined pressure in the passageway; and wherein regulating a mass flow rate comprises modulating the first valve in response to the determined mass flow rate in the passageway. 4. The method of claim 1, further comprising: determining the pressure in the passageway downstream from the first valve; determining the pressure in the passageway upstream from the first valve; and wherein regulating a pressure comprises modulating the first valve to control the pressure in response to the determined pressure in the passageway downstream and/or upstream from the first valve. 5. The method of claim 1 wherein regulating a mass flow rate comprises controlling the mass flow rate as a gas flows through the passageway and into a reaction chamber. 6. The method of claim 1 wherein regulating a mass flow rate comprises controlling the pressure in the passageway when the passageway is charged with a gas. 7. A method for controlling a vapor deposition process in a reaction chamber, the method comprising: positioning a first valve upstream a second valve in a passageway, the second valve being upstream the processing chamber; receiving an electrical signal from the second valve, the electrical signal indicating a position of the second valve; if the monitored electrical signal indicates that the second valve is in a first position, regulating a pressure in the passageway to a predetermined pressure setpoint by modulating the first valve instead of regulating a mass flow rate in the passageway to a predetermined mass flow rate setpoint by modulating the first valve; and if the monitored electrical signal indicates that the second valve is in a second position different than the first position, regulating the mass flow rate in the passageway to the predetermined mass flow rate setpoint by modulating the first valve instead of regulating the pressure in the passageway to the predetermined pressure setpoint by modulating the first valve. 8. The method of claim 7, further comprising: measuring the pressure in the passageway; and wherein regulating a pressure in the passageway includes opening the first valve to allow a gas to flow into the passageway until the measured pressure in the passageway reaches the predetermined pressure setpoint and closing the first valve to limit the pressure in the passageway after the measured pressure in the passageway reaches the predetermined pressure setpoint. 9. The method of claim 7, further comprising: measuring the mass flow rate in the passageway; and wherein regulating a mass flow rate in the passageway includes opening the first valve until the measured mass flow rate reaches the predetermined mass flow rate setpoint. 10. The method of claim 7 wherein the first position indicates that the second valve is substantially closed, and the second position indicates that the second valve is at least partially open. 11. The method of claim 7 wherein regulating a mass flow rate comprises controlling the mass flow rate as a gas flows through the passageway and into a reaction chamber. 12. The method of claim 7 wherein regulating a mass flow rate comprises controlling the pressure in the passageway when the passageway is charged with a gas. 13. A method for controlling a vapor deposition process in a reaction chamber, the method comprising: positioning a first valve upstream a second valve in a passageway, the second valve being upstream the processing chamber; measuring a pressure in the passageway; if the measured pressure exceeds a predetermined pressure setpoint, regulating the pressure in the passageway to the predetermined pressure setpoint by modulating the first valve; and if the measured pressure is below the predetermined pressure threshold, regulating a mass flow rate in the passageway to a predetermined mass flow rate setpoint by modulating the first valve, wherein the first valve is modulated to alternatively regulate the pressure in the passageway to the predetermined pressure setpoint or to regulate the mass flow rate in the passageway to the predetermined mass flow rate setpoint. 14. The method of claim 13 wherein regulating a pressure in the passageway includes modulating the first valve to limit the pressure in the passageway after the measured pressure in the passageway exceeds the predetermined pressure setpoint. 15. The method of claim 13, further comprising: measuring the mass flow rate in the passageway; and wherein regulating a mass flow rate in the passageway includes opening the first valve until the measured mass flow rate reaches the predetermined mass flow rate setpoint. 16. The method of claim 13 wherein regulating a mass flow rate comprises controlling the mass flow rate as a gas flows through the passageway and into a reaction chamber. 17. The method of claim 13 wherein regulating a mass flow rate comprises controlling the pressure in the passageway when the passageway is charged with a gas.
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