Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C30B-001/02
C30B-001/00
출원번호
US-0532500
(2003-12-04)
등록번호
US-7338554
(2008-03-04)
우선권정보
FR-02 15530(2002-12-09)
국제출원번호
PCT/FR03/050154
(2003-12-04)
§371/§102 date
20050425
(20050425)
국제공개번호
WO04/055232
(2004-07-01)
발명자
/ 주소
Delaunay,Marc
Vinet,Francoise
출원인 / 주소
Commissariat a L'Energie Atomique
대리인 / 주소
Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보
피인용 횟수 :
9인용 특허 :
2
초록▼
The invention relates to a process for synthesizing nanorods of a carbide of one metal M1 on a substrate, which comprises: a) the deposition, on the substrate, of a layer of nanocrystals of oxide of the metal M1 and nanocrystals of oxide of at least one metal M2 different from metal M1, the M1 me
The invention relates to a process for synthesizing nanorods of a carbide of one metal M1 on a substrate, which comprises: a) the deposition, on the substrate, of a layer of nanocrystals of oxide of the metal M1 and nanocrystals of oxide of at least one metal M2 different from metal M1, the M1 metal oxide nanocrystals being dispersed within this layer; b) the reduction of the M1 and M2 metal oxide nanocrystals into corresponding metal nanocrystals; and c) the selective growth of the M1 metal nanocrystals. The invention also relates to a process for growing nanorods of a carbide of one metal M1 on a substrate from nanocrystals of this metal, to the substrates thus obtained and to their applications: fabrication of Microsystems provided with chemical or biological functionalities, in particular the fabrication of biosensors; electron emission sources, for example for flat television or computer screens; etc.
대표청구항▼
The invention claimed is: 1. A process for synthesizing nanorods of a carbide of one metal M1 on a substrate, comprising the following steps: a) the deposition, on the substrate, of a layer comprising nanocrystals of oxide of the metal M1 and nanocrystals of oxide of at least one metal M2 different
The invention claimed is: 1. A process for synthesizing nanorods of a carbide of one metal M1 on a substrate, comprising the following steps: a) the deposition, on the substrate, of a layer comprising nanocrystals of oxide of the metal M1 and nanocrystals of oxide of at least one metal M2 different from the metal M1, the M1 metal oxide nanocrystals being dispersed within this layer; b) the reduction of the M1 and M2 metal oxide nanocrystals into corresponding metal nanocrystals; and c) the selective growth of the M1 metal nanocrystals. 2. The process according to claim 1, wherein step a) is carried out by reactive sputtering from a target consisting of the metals M1 and M2 by an oxygen plasma produced by an electron cyclotron resonance microwave plasma source. 3. The process according to claim 2, wherein said target comprises a mixture of the metals M1 and M2. 4. The process according to claim 2, wherein said target comprises several zones, adjacent to one another or separated from one another, at least one of these zones consisting of the metal M1, whereas the one or more other of these zones consist(s) of the metal or metals M2. 5. The process according to claim 1, wherein step b) is carried out by a hydrogen plasma produced by an electron cyclotron resonance microwave plasma source, the substrate being heated. 6. The process according to claim 1, wherein step c) is carried out by a plasma of at least one hydrocarbon produced by an electron cyclotron resonance microwave plasma source, the substrate being heated. 7. The process according to claim 1, wherein the metal M1 is selected from the group consisting of metals capable of reacting with organic molecules or radicals that are in gaseous form in order to form, with them, a metal carbide. 8. The process according to claim 7, wherein the metal M1 is at least one selected from the group consisting of chromium and molybdenum. 9. The process according to claim 1, wherein the metal or metals M2 are selected from the group consisting of metals utilized as catalysts in organic chemistry. 10. The process according to claim 9, wherein the metal or metals M2 are at least one selected from the group consisting of iron, nickel and cobalt. 11. The process according to claim 2, wherein said target comprises a stainless steel composed of iron and chromium, or of iron, chromium and nickel. 12. The process according to claim 10, wherein said target is biased with a negative voltage of-200 V or higher and preferably of between-400 and-200 V. 13. The process according to claim 11, wherein said oxygen plasma is maintained at a pressure of generally 10-3 mbar or below, and preferably between 10-4 and 10-3 mbar. 14. The process according to claim 5, wherein, in step b), the hydrogen plasma is maintained at a pressure of 10-2 mbar or below, and advantageously between 10-3 and 10-2 mbar, and the substrate is heated to a temperature ranging from 300 to 600�� C. 15. The process according to claim 6, wherein, in step c), the hydrocarbon plasma is maintained at a pressure of 10-2 mbar or below, and preferably between 10-3 and 10-2 mbar, while the substrate is heated to a temperature of 600�� C. or higher, and preferably between 600 and 800�� C. 16. The process according to claim 6, wherein the hydrocarbon or hydrocarbons used in step c) are at least one selected from the group consisting of alkanes, alkenes, alkynes, and ethylene. 17. The process according to claim 1, wherein the substrate is at least one selected from the group consisting of silicon, borosilicate glasses, quartz, metals and metal alloys. 18. A process for growing nanorods of a carbide of one metal M1 on a substrate, which consists in subjecting nanocrystals of the metal M1 dispersed within a layer of nanocrystals of at least one metal M2 different from M1, said layer being deposited beforehand on the substrate, to the action of a plasma of at least one hydrocarbon produced by an ECR microwave plasma source. 19. The process according to claim 18, wherein the metal M1 is selected from the group consisting of metals capable of reacting with organic molecules or radicals that are in gaseous form in order to form, with them, a metal carbide. 20. The process according to claim 19, wherein the metal M1 is at least one selected from the group consisting of chromium and molybdenum. 21. The process according to claim 18, wherein the metal or metals M2 are selected from the group consisting of metals utilized as catalysts in organic chemistry. 22. The process according to claim 21, wherein the metal or metals M2 are at least one selected from the group consisting of iron, nickel and cobalt. 23. The process according to claim 18, wherein the hydrocarbon plasma is maintained at a pressure of 10-2 mbar or below and preferably of between 10-3 and 10-2 mbar, while the substrate is heated to a temperature of 600�� C. or higher, and preferably of between 600 and 800��. 24. The process according to claim 18, wherein the hydrocarbon or hydrocarbons are at least one selected from the group consisting of alkanes, alkenes, alkynes, and ethylene. 25. The process according to claim 18, wherein the substrate is at least one selected from the group consisting of silicon, borosilicate glasses, quartz, metals and metal alloys.
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이 특허에 인용된 특허 (2)
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