Semiconductor device and method for manufacturing the same, and electric appliance
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
출원번호
US-0227190
(2005-09-16)
등록번호
US-7368318
(2008-05-06)
우선권정보
JP-2004-278548(2004-09-24)
발명자
/ 주소
Yamazaki,Shunpei
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson,Eric J.
인용정보
피인용 횟수 :
14인용 특허 :
20
초록▼
The present invention provides a semiconductor device having a plurality of functions and a method for manufacturing the semiconductor device. The semiconductor device comprises a thin film integrated circuit, a first substrate having a sensor or an antenna, and a second substrate having an antenna
The present invention provides a semiconductor device having a plurality of functions and a method for manufacturing the semiconductor device. The semiconductor device comprises a thin film integrated circuit, a first substrate having a sensor or an antenna, and a second substrate having an antenna, wherein the thin film integrated circuit is interposed between the first substrate having a sensor or an antenna and the second substrate having an antenna. In the case that the semiconductor device has a plurality of antennas and the semiconductor device communicates in different frequency bands, the semiconductor device can receive a plurality of frequency bands, and so the range of choice of the reader/writer is expanded. In the case that the semiconductor device has a sensor and an antenna, information detected by the sensor can be converted to signals and the signals can be output to a reader/writer via the antenna. Therefore, the semiconductor device is added with higher value than that of the conventional semiconductor device such as a wireless chip.
대표청구항▼
What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: selectively forming a release layer over a first substrate; forming a first insulating layer over the first substrate with the release layer interposed therebetween; forming a plurality of thin film tr
What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: selectively forming a release layer over a first substrate; forming a first insulating layer over the first substrate with the release layer interposed therebetween; forming a plurality of thin film transistors over the first insulating layer; forming a second insulating layer over the first insulating layer; forming a first opening portion in the first insulating layer and the second insulating layer so that a portion of the first substrate is exposed; forming a second opening portion in the second insulating layer so that at least one of source and drain regions of the plurality of thin film transistors is exposed; forming a first conductive layer for filling the first opening portion and a second conductive layer for filling the second opening portion; forming a third opening portion in the first insulating layer and the second insulating layer to expose a portion of the release layer; removing the release layer by introducing etchant into the third opening portion; attaching the plurality of thin film transistors to a second substrate so that the second conductive layer is connected to a third conductive layer provided over the second substrate; separating the plurality of thin film transistors from the first substrate; and attaching the plurality of thin film transistors to a third substrate so that the first conductive layer is connected to a fourth conductive layer provided over the third substrate. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the release layer comprises tungsten or molybdenum. 3. The method for manufacturing a semiconductor device according to claim 1, wherein a layer containing an oxide of tungsten or molybdenum is formed by a sputtering method under oxygen atmosphere as the release layer. 4. The method for manufacturing a semiconductor device according to claim 1, wherein a layer containing tungsten or molybdenum is formed and a layer containing an oxide of silicon is formed thereover as the release layer. 5. The method for manufacturing a semiconductor device according to claim 1, wherein each of the first insulating layer and the second insulating layer comprises silicon. 6. The method for manufacturing a semiconductor device according to claim 1, wherein the etchant is gas or liquid containing halogen fluoride. 7. The method for manufacturing a semiconductor device according to claim 1, wherein the third conductive layer and the fourth conductive layer serve as antennas. 8. The method for manufacturing a semiconductor device according to claim 1, wherein the third conductive layer serves as an antenna and the fourth conductive layer is electrically connected to a sensor. 9. A method for manufacturing a semiconductor device comprising the steps of: selectively forming a release layer over a first substrate; forming a first insulating layer over the first substrate with the release layer interposed therebetween; forming a plurality of thin film transistors over the first insulating layer; forming a second insulating layer over the first insulating layer; forming a first opening portion in the first insulating layer and the second insulating layer so that a portion of the first substrate is exposed; forming a second opening portion in the second insulating layer so that at least one of source and drain regions of the plurality of thin film transistors is exposed; forming a first conductive layer for filling the first opening portion and a second conductive layer for filling the second opening portion; forming a third opening portion in the first insulating layer and the second insulating layer to expose a portion of the release layer; selectively removing the release layer by introducing etchant into the third opening portion; attaching the plurality of thin film transistors to a second substrate so that the second conductive layer is connected to a third conductive layer provided over the second substrate; separating the plurality of thin film transistors from the first substrate by a physical force; and attaching the plurality of thin film transistors to a third substrate so that the first conductive layer is connected to a fourth conductive layer provided over the third substrate. 10. The method for manufacturing a semiconductor device according to claim 9, wherein the release layer comprises tungsten or molybdenum. 11. The method for manufacturing a semiconductor device according to claim 9, wherein a layer containing an oxide of tungsten or molybdenum is formed by a sputtering method under oxygen atmosphere as the release layer. 12. The method for manufacturing a semiconductor device according to claim 9, wherein a layer containing tungsten or molybdenum is formed and a layer containing an oxide of silicon is formed thereover as the release layer. 13. The method for manufacturing a semiconductor device according to claim 9, wherein each of the first insulating layer and the second insulating layer comprises silicon. 14. The method for manufacturing a semiconductor device according to claim 9, wherein the etchant is gas or liquid containing halogen fluoride. 15. The method for manufacturing a semiconductor device according to claim 9, wherein the third conductive layer and the fourth conductive layer serve as antennas. 16. The method for manufacturing a semiconductor device according to claim 9, wherein the third conductive layer serves as an antenna and the fourth conductive layer is electrically connected to a sensor. 17. A semiconductor device comprising: a thin film integrated circuit; a first substrate having a sensor; a first resin including a first conductive particle between the thin film integrated circuit and the first substrate having the sensor; a second substrate having an antenna; and a second resin including a second conductive particle between the thin film integrated circuit and the second substrate having the antenna, wherein the thin film integrated circuit is interposed between the first substrate having the sensor and the second substrate:having the antenna, and wherein the thin film integrated circuit is electrically connected to the sensor via the first resin including the first conductive particle and is electrically connected to the antenna via the second resin including the second conductive particle. 18. The semiconductor device according to claim 17, wherein the first substrate and the second substrate have flexibility. 19. An electric appliance having the semiconductor device according to claim 17. 20. A semiconductor device comprising: a thin film integrated circuit; a first substrate having a first antenna; a first resin including a first conductive particle between the thin film integrated circuit and the first substrate having the first antenna; a second substrate having a second antenna; and a second resin including a second conductive particle between the thin film integrated circuit and the second substrate having the second antenna, wherein the thin film integrated circuit is interposed between the first substrate having the first antenna and the second substrate having the second antenna, and wherein the thin film integrated circuit is electrically connected to the first antenna via the first resin including the first conductive particle and is electrically connected to the second antenna via the second resin including the second conductive particle. 21. The semiconductor device according to claim 20, wherein the first substrate and the second substrate have flexibility. 22. An electric appliance having the semiconductor device according to claim 20. 23. A semiconductor device comprising: a first conductive layer provided over a first substrate; a first insulating layer covering the first conductive layer; a first thin film transistor and a second thin film transistor which are provided over the first insulating layer; a second insulating layer covering the first thin film transistor and the second thin film transistor; a second conductive layer and a third conductive layer which are provided over the second insulating layer; and a fourth conductive layer provided over a second substrate; wherein the second conductive layer is connected to at least one of source and drain regions of the first thin film transistor via a first opening portion provided in the second insulating layer and to the first conductive layer via a second opening portion provided in the first insulating layer and the second insulating layer, and the third conductive layer is connected to at least one of source and drain regions of the second thin film transistor via a third opening portion provided in the second insulating layer and to the fourth conductive layer. 24. The semiconductor device according to claim 23, wherein the first conductive layer and the second conductive layer are electrically connected to each other with conductive particles, and the third conductive layer and the fourth conductive layer are electrically connected to each other with conductive particles. 25. The semiconductor device according to claim 23, wherein a first resin including conductive particles is interposed between the first substrate and the first insulating layer, and a second resin including conductive particles is interposed between the second insulating layer and the second substrate. 26. The semiconductor device according to claim 23, wherein the first substrate and the second substrate have flexibility. 27. The semiconductor device according to claim 23, wherein the first conductive layer and the fourth conductive layer serve as antennas. 28. The semiconductor device according to claim 23, wherein the first conductive layer serves as an antenna and the fourth conductive layer is electrically connected to the sensor. 29. The semiconductor device according to claim 23, wherein the second conductive layer has at least a region which is in contact with the first conductive layer via a resin including conductive particles and a region which is in contact with the second insulating layer. 30. The semiconductor device according to claim 23, wherein the first thin film transistor and the second thin film transistor have side wall insulating layers. 31. An electric appliance having the semiconductor device according to claim 23.
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