Cerium oxide abrasives for chemical mechanical polishing
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/302
H01L-021/02
출원번호
US-0106490
(2005-04-15)
등록번호
US-7368388
(2008-05-06)
발명자
/ 주소
Small,Robert J.
Hayden,Christopher G
출원인 / 주소
Small,Robert J.
Hayden,Christopher G
대리인 / 주소
Hayden Stone PLLC
인용정보
피인용 횟수 :
11인용 특허 :
0
초록▼
The use of mixed cerium-containing synthetic solid abrasive materials in chemical mechanical polishing slurries can provide better selectivity, better substrate removal rates, or lower defect rates than conventional ceria slurries. The slurries have abrasive particles that include a plurality of sol
The use of mixed cerium-containing synthetic solid abrasive materials in chemical mechanical polishing slurries can provide better selectivity, better substrate removal rates, or lower defect rates than conventional ceria slurries. The slurries have abrasive particles that include a plurality of solid cerium-containing phases selected from CeO2, Ce2O3, cerium-nitride material, cerium-fluoride material, and cerium-sulfide material, where different cerium-containing materials are present in different particles or on the same particles.
대표청구항▼
What is claimed: 1. A method of chemically mechanically polishing a substrate which comprises a dielectric material and a material comprising a metal, comprising the steps of: A) providing a polishing slurry comprising: 1) a synthetic abrasive material comprising at least one of particles comprisin
What is claimed: 1. A method of chemically mechanically polishing a substrate which comprises a dielectric material and a material comprising a metal, comprising the steps of: A) providing a polishing slurry comprising: 1) a synthetic abrasive material comprising at least one of particles comprising CeO2 and particles comprising Ce2O3, particles comprising CeO2 and particles comprising cerium nitride, particles comprising CeO2 and particles comprising cerium oxynitride, particles comprising CeO2 and particles comprising cerium fluoride, or particles comprising CeO2 and particles comprising ceric sulfide, and 2) a solvent comprising water, a polar organic solvent, a non-polar organic solvent, or mixture thereof, and B) providing a substrate having a surface comprising a dielectric material and a material comprising a metal; and C) movably contacting the polishing slurry with the surface under conditions where a portion of the substrate is removed by a chemical mechanical polishing process. 2. The method of claim 1 wherein the slurry further comprises a polishing accelerator, a selectivity enhancer, or both. 3. The method of claim 1 wherein the abrasive comprises particles comprising CeO2 and particles comprising Ce2O3. 4. The method of claim 1 wherein the abrasive comprises particles comprising CeO2 and particles comprising cerium nitride, cerium oxynitride, or both. 5. The method of claim 1 wherein the abrasive comprises particles comprising CeO2 and particles comprising ceric fluoride. 6. The method of claim 1 wherein the abrasive comprises particles comprising CeO2 and particles comprising ceric sulfide. 7. A method of chemically mechanically polishing a substrate which comprises a dielectric material and a material comprising a metal, comprising the steps of: A) providing a polishing slurry comprising: 1) a synthetic abrasive material comprising any of particles comprising Ce2O3 and particles comprising cerium nitride and/or cerium oxynitride, particles comprising Ce2O3 and particles comprising cerium fluoride, or particles comprising Ce2O3 and particles comprising cerium sulfide, and 2) a solvent comprising water, a polar organic solvent, a non-polar organic solvent, or mixture thereof, and B) providing a substrate having a surface comprising a dielectric material and a material comprising a metal; and: C) movably contacting the polishing slurry with the surface under conditions where a portion of the substrate is removed by a chemical mechanical polishing process. 8. The method of claim 7 wherein the slurry further comprises a polishing accelerator, a selectivity enhancer, or both. 9. The method of claim 7 wherein the abrasive comprises particles comprising Ce2O3 and particles comprising cerium nitride and/or cerium oxynitride. 10. The method of claim 7 wherein the abrasive comprises particles comprising Ce2O3 and particles comprising cerium fluoride. 11. The method of claim 7 wherein the abrasive comprises particles comprising Ce2O3 and particles comprising ceric sulfide. 12. A method of chemically mechanically polishing a substrate which comprises a dielectric material and a material comprising a metal, comprising the steps of: A) providing a polishing slurry comprising: 1) a synthetic abrasive material comprising any of particles comprising both CeO2 and Ce2O3 phases, particles comprising both CeO2 and cerium nitride and/or cerium oxynitride phases, particles comprising both CeO2 and ceric fluoride phases, or particles comprising both CeO2 and ceric sulfide phases particles, and 2) a solvent comprising water, a polar organic solvent, a non-polar organic solvent, or mixture thereof, and B) providing a substrate having a surface comprising a dielectric material and a material comprising a metal; and C) movably contacting the polishing slurry with the surface under conditions where a portion of the substrate is removed by a chemical mechanical polishing process. 13. The method of claim 12 wherein the slurry further comprises a polishing accelerator, a selectivity enhancer, or both. 14. The method of claim 12 wherein the abrasive comprises particles comprising both CeO2 and Ce2O3. 15. The method of claim 12 wherein the abrasive comprises particles comprising CeO2 and at least one of cerium nitride or cerium oxynitride. 16. The method of claim 12 wherein the abrasive comprises particles comprising both CeO2 and ceric fluoride phases. 17. The method of claim 12 wherein the abrasive comprises particles comprising both CeO2 and ceric sulfide phases. 18. A method of chemically mechanically polishing a substrate which comprises a dielectric material and a material comprising a metal, comprising the steps of: A) providing a polishing slurry comprising: a synthetic particle comprising a plurality of cerium materials selected from CeO2, Ce2O3, cerium nitride, cerium oxynitride, cerium fluoride, and cerium sulfide materials, and a solvent comprising water, a polar organic solvent, a non-polar organic solvent, or mixture thereof, and B) providing a substrate having a surface comprising a dielectric material and a material comprising a metal; and C) movably contacting the polishing slurry with the surface under conditions where a portion of the substrate is removed by a chemical mechanical polishing process, wherein the abrasive particle comprises two of CeO2, Ce2O3, ceric nitride, ceric fluoride, and ceric sulfide phases, wherein both of the chases are present in an amount each greater than about 0.1% by weight of the particle. 19. The method of claim 18 wherein the slurry further comprises a polishing accelerator, a selectivity enhancer, or both. 20. The method of claim 18 wherein the abrasive particle comprises two of CeO2, Ce2O3, cerium nitride, cerium fluoride, or cerium sulfide materials, wherein both of the included cerium materials are present in the abrasive particle in an amount each greater than about 1% by weight of the particle.
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