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A semiconductor-on-insulator structure includes a substrate and a buried insulator stack overlying the substrate. The buried insulator stack includes a first dielectric layer and a recess-resistant layer overlying the first dielectric layer. A second dielectric layer can overlie the recess-resistant

A semiconductor-on-insulator structure includes a substrate and a buried insulator stack overlying the substrate. The buried insulator stack includes a first dielectric layer and a recess-resistant layer overlying the first dielectric layer. A second dielectric layer can overlie the recess-resistant layer. A semiconductor layer overlying the buried insulator stack. Active devices, such as transistors and diodes, can be formed in the semiconductor layer.

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What is claimed is: 1. A semiconductor-on-insulator structure comprising: a substrate; a buried insulator stack overlying the substrate, the buried insulator stack including a recess-resistant layer and a first dielectric layer, the recess-resistant layer overlying the first dielectric layer and wh

What is claimed is: 1. A semiconductor-on-insulator structure comprising: a substrate; a buried insulator stack overlying the substrate, the buried insulator stack including a recess-resistant layer and a first dielectric layer, the recess-resistant layer overlying the first dielectric layer and wherein the recess-resistant layer comprises a dielectric that has an etch rate of less than 10 angstroms per minute in a wet cleaning solution; a semiconductor layer overlying the buried insulator stack; and at least one open trench formed in said semiconductor layer defining a semiconductor mesa, said at least one trench extending at least through said semiconductor layer and exposing said buried insulator stack. 2. The structure of claim 1 wherein the semiconductor layer comprises silicon. 3. The structure of claim 2 wherein the semiconductor layer comprises strained silicon. 4. The structure of claim 3 wherein the strained silicon is under tensile strain. 5. The structure of claim 4 wherein the tensile strain has a magnitude of between about 0.01% and about 4%. 6. The structure of claim 1 wherein the semiconductor layer contains silicon and germanium. 7. The structure of claim 1 wherein the recess-resistant layer comprises silicon nitride. 8. The structure of claim 1 wherein the recess-resistant layer has a thickness of between about 10 angstroms and about 200 angstroms. 9. The structure of claim 1 wherein the recess-resistant layer is in contact with the semiconductor layer. 10. The structure of claim 1 wherein the buried insulator stack further comprises a second dielectric layer overlying the recess-resistant layer, the second dielectric layer being in contact with the semiconductor layer. 11. The structure of claim 10 wherein the second dielectric layer comprises silicon oxide. 12. The structure of claim 10 wherein the second dielectric layer has a thickness of between about 10 and about 200 angstroms. 13. The structure of claim 1 wherein the first dielectric layer comprises silicon oxide. 14. The structure of claim 1 wherein the first dielectric layer has a thickness of between about 100 angstroms and about 5000 angstroms. 15. The structure of claim 1 wherein the substrate comprises a silicon substrate. 16. The structure of claim 1 wherein said semiconductor layer defines mesas therein, said mesas including active devices. 17. The structure of claim 1 wherein said recess-resistant layer comprises SiOxNyiHz. 18. A semiconductor-on-insulator chip comprising: a substrate; a buried insulator stack overlying the substrate, the buried insulator stack comprising of at least a recess-resistant layer and a first dielectric layer, the recess-resistant layer overlying the first dielectric layer and wherein the recess-resistant layer comprises a dielectric that has an etch rate of less than 10 angstroms per minute in a wet cleaning solution; a plurality of semiconductor mesas overlying portions of the buried insulator stack; trenches seperating said semiconducting mesas, said trenches exposing said buried insulator stack; and active devices formed on the semiconductor mesas. 19. The chip of claim 18 wherein the semiconductor comprises of silicon. 20. The chip of claim 19 wherein the semiconductor comprises of strained silicon. 21. The chip of claim 18 wherein the semiconductor contains silicon and germanium. 22. The chip of claim 18 wherein the recess-resistant layer comprises silicon nitride. 23. The chip of claim 18 wherein the recess-resistant layer has a thickness of between about 10 angstroms and about 200 angstroms. 24. The chip of claim 18 wherein the recess-resistant layer is in contact with each of the semiconductor mesas. 25. The chip of claim 18 wherein the buried insulator stack further comprises a second dielectric layer overlying the recess-resistant layer, the second dielectric layer being in contact with the semiconductor mesas. 26. The chip of claim 25 wherein the second dielectric layer comprises silicon oxide. 27. The chip of claim 25 wherein the second dielectric layer has a thickness of between about 10 and about 200 angstroms. 28. The chip of claim 18 wherein the first dielectric layer comprises silicon oxide. 29. The chip of claim 18 wherein the first dielectric layer has a thickness of between about 100 angstroms and about 5000 angstroms. 30. The chip of claim 18 wherein the substrate comprises a silicon substrate. 31. The chip of claim 18 wherein said recess-resistant layer comprises SiOxNyiHz.