A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor d
A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410�� C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.
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What is claimed is: 1. A method of manufacturing a semiconductor device comprising: forming a nitride layer over a substrate; forming an oxide layer contacting with the nitride layer; forming an insulating film contacting with the oxide layer; forming a semiconductor film having an amorphous struct
What is claimed is: 1. A method of manufacturing a semiconductor device comprising: forming a nitride layer over a substrate; forming an oxide layer contacting with the nitride layer; forming an insulating film contacting with the oxide layer; forming a semiconductor film having an amorphous structure over the insulating film, wherein the semiconductor film comprises hydrogen; performing heat treatment for diffusing the hydrogen; adhering a support member to a layer to be peeled, wherein the layer comprises the insulating film and the semiconductor film; and peeling the layer to be peeled from the nitride layer formed over the substrate after adhering the support member. 2. A method of manufacturing a semiconductor device comprising: forming a nitride layer over a substrate; forming an oxide layer contacting with the nitride layer; forming an insulating film contacting with the oxide layer; forming a semiconductor film having an amorphous structure over the insulating film, wherein the semiconductor film comprises hydrogen; performing heat treatment for diffusing the hydrogen; forming a thin film transistor comprising the semiconductor film as an active layer and an element connected with the thin film transistor; adhering a support member to a layer to be peeled, wherein the layer comprises the insulating film, the thin film transistor and the element connected with the thin film transistor; and peeling the layer to be peeled from the nitride layer formed over the substrate after adhering the support member. 3. A method of manufacturing a semiconductor device according to claim 1, wherein the heat treatment is performed at a temperature equal to or higher than a temperature at which the hydrogen in the semiconductor film is emitted or diffused. 4. A method of manufacturing a semiconductor device according to claim 2, wherein the heat treatment is performed at a temperature equal to or higher than a temperature at which the hydrogen in the semiconductor film is emitted or diffused. 5. A method of manufacturing a semiconductor device according to claim 1, wherein the nitride layer comprises titanium nitride, tungsten nitride, tantalum nitride, or molybdenum nitride. 6. A method of manufacturing a semiconductor device according to claim 2, wherein the nitride layer comprises titanium nitride, tungsten nitride, tantalum nitride, or molybdenum nitride. 7. A method of manufacturing a semiconductor device according to claim 1, wherein the oxide layer is a silicon oxide film formed by sputtering. 8. A method of manufacturing a semiconductor device according to claim 2, wherein the oxide layer is a silicon oxide film formed by sputtering. 9. A method of manufacturing a semiconductor device according to claim 1, wherein the insulating film is at least one selected from the group consisting of a silicon oxide film, a silicon oxynitride film, and a lamination layer of the films. 10. A method of manufacturing a semiconductor device according to claim 2, wherein the insulating film is a silicon oxide film, a silicon oxynitride film, or a lamination layer of the films. 11. A method of manufacturing a semiconductor device according to claim 1, wherein a thickness of the oxide layer is thicker than a film thickness of the nitride layer. 12. A method of manufacturing a semiconductor device according to claim 2, wherein a thickness of the oxide layer is thicker than a film thickness of the nitride layer. 13. A method of manufacturing a semiconductor device according to claim 2, wherein an element provided on the insulating film is at least one selected from the group consisting of a light emitting element, a semiconductor element, and a liquid crystal element. 14. A method of manufacturing a semiconductor device comprising: forming a nitride layer over a substrate; forming an oxide layer on the nitride layer; forming an insulating layer on the oxide layer by plasma CVD; forming a semiconductor film comprising amorphous silicon and hydrogen over the insulating layer; crystallizing the semiconductor film; patterning the crystallized semiconductor film to form at least one island-like semiconductor layer; forming at least one thin film transistor using the at least one semiconductor layer for a channel forming region thereof; and separating the substrate from the at least one thin film transistor. 15. A method of manufacturing a semiconductor device according to claim 14, wherein the nitride layer comprises titanium nitride, tungsten nitride, tantalum nitride, or molybdenum nitride. 16. A method of manufacturing a semiconductor device according to claim 14, wherein the oxide layer comprises a material selected from the group consisting of silicon oxide, silicon nitride oxide and a metal oxide. 17. A method of manufacturing a semiconductor device according to claim 14, wherein the oxide layer is formed by sputtering. 18. A method of manufacturing a semiconductor device according to claim 14, wherein a surface of the nitride layer is oxidized during the formation of the oxide layer. 19. A method of manufacturing a semiconductor device comprising: forming a nitride layer over a substrate; forming an oxide layer on the nitride layer; forming a layer containing hydrogen over the oxide layer; heating the layer containing hydrogen to emit hydrogen therefrom; and separating the substrate from the layer containing hydrogen after the heating. 20. A method of manufacturing a semiconductor device according to claim 19, wherein the heating of the layer containing hydrogen is performed at a temperature of 410�� C. or higher. 21. A method of manufacturing a semiconductor device according to claim 19, wherein the nitride layer comprises titanium nitride, tungsten nitride, tantalum nitride, or molybdenum nitride. 22. A method of manufacturing a semiconductor device according to claim 19, wherein the oxide layer comprises a material selected from the group consisting of silicon oxide, silicon nitride oxide and a metal oxide. 23. A method of manufacturing a semiconductor device according to claim 19, wherein the oxide layer is formed by sputtering. 24. A method of manufacturing a semiconductor device according to claim 19, wherein a surface of the nitride layer is oxidized during the formation of the oxide layer. 25. A method of manufacturing a semiconductor device according to claim 19, wherein the layer containing hydrogen comprises silicon nitride. 26. A method of manufacturing a semiconductor device according to claim 1, wherein the peeling of the layer to be peeled is performed by physical means. 27. A method of manufacturing a semiconductor device according to claim 2, wherein the peeling of the layer to be peeled is performed by physical means.
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