초록 ▼

A three dimensional integrated circuit structure includes at least first and second devices, each device comprising a substrate and a device layer formed over the substrate, the first and second devices being bonded together in a stack, wherein the bond between the first and second devices comprises

A three dimensional integrated circuit structure includes at least first and second devices, each device comprising a substrate and a device layer formed over the substrate, the first and second devices being bonded together in a stack, wherein the bond between the first and second devices comprises a metal-to-metal bond and a non-metal-to-non-metal bond.

대표청구항 ▼

What is claimed is: 1. A three dimensional integrated circuit structure, comprising: at least first and second integrated circuit devices, each device comprising a substrate having an integrated circuit layer formed thereon, said first and second devices being bonded together in a stack, wherein ea

What is claimed is: 1. A three dimensional integrated circuit structure, comprising: at least first and second integrated circuit devices, each device comprising a substrate having an integrated circuit layer formed thereon, said first and second devices being bonded together in a stack, wherein each device includes at least one metal interconnect formed through at least a portion of its substrate and integrated circuit layer, wherein the bond between the first and second integrated circuit devices comprises a metal-to-metal melt bond between said metal interconnects and a non-metal-to-non-metal bond along an interface between adjacent surfaces of the devices. 2. The circuit structure of claim 1, wherein the non-metal-to-non-metal bond comprises at least one of a dielectric fusion bond between the devices and an adhesive bond between the devices. 3. The circuit structure of claim 1, wherein said first and second devices are aligned in a face-to-face orientation. 4. The circuit structure of claim 1, wherein said second and first devices are aligned in a back-to-face orientation, respectively. 5. The circuit structure of claim 1, wherein said first integrated circuit device further comprises a dielectric layer formed over its integrated circuit layer and forming a part of said non-metal-to-non-metal bond. 6. The circuit structure of claim 5, wherein said dielectric layer comprises Si, SiNx, SiOx, SiOxNy, SiC or a polymer. 7. The circuit structure of claim 5, wherein said second and first devices are aligned in a back-to-face orientation, respectively, wherein the at least one metal interconnect of the first device is further formed through said dielectric layer, wherein said metal interconnects of said first and second devices are aligned to form said metal-to-metal melt bond, and wherein said substrate of said second device and said dielectric layer of said first device are bonded together along the interface therebetween to form at least a part of said non-metal-to-non-metal bond. 8. The circuit structure of claim 7, wherein the second integrated circuit device comprises a dielectric layer formed over a bottom surface of its substrate, wherein said at least one metal interconnect of said second device extends through said dielectric layer, and wherein said dielectric layer of said second device and said dielectric layer of said first device are directly bonded together to form at least a part of said non-metal-to-non-metal bond. 9. The circuit structure of claim 5, wherein the second and first devices are aligned in a face-to-face orientation, wherein the at least one metal interconnect of the first device is further formed through said dielectric layer, wherein said second device comprises at least one dielectric layer formed over said integrated circuit layer of said second device, wherein the at least one metal interconnect of the first device is further formed through said dielectric layer, wherein said metal interconnects of said first and second devices are aligned to form said metal-to-metal melt bond, and wherein said dielectric layer of said second device and said dielectric layer of said first device are directly bonded together along the interface therebetween to form at least a part of said non-metal-to-non-metal bond. 10. The circuit structure of claim 1, wherein the substrate of said second device is thinner than the substrate of said first device. 11. The circuit structure of claim 1, wherein said stack comprises a plurality of devices, a top most one of said devices being oriented with a bottom surface of said substrate facing upwards and an integrated circuit layer of said device facing the other device or devices in said stack, said integrated circuit structure further comprising a passivation and bonding structure formed over said bottom surface of said substrate. 12. A method of forming a three dimensional integrated circuit structure, comprising the following steps: providing at least first and second integrated circuit devices, each device comprising a substrate having an integrated circuit layer formed thereon and at least one metal interconnect formed through at least a portion of its substrate and integrated circuit layer; and bonding said first and second devices together in a stack, wherein the bond between the first and second devices comprises a metal-to-metal melt bond between said metal interconnects and a non-metal-to-non-metal bond along an interface between adjacent surfaces of the devices. 13. The method of claim 12, wherein the bonding step comprises the following steps: forming a dielectric layer over the integrated circuit layer of the first device; forming the at least one metal interconnect of the first device through said dielectric layer; aligning said metal interconnects of said first and second devices, wherein said substrate of said second device and said dielectric layer of said first device are bonded together along the interface therebetween to form at least a part of said non-metal-to-non-metal bond. 14. The method of claim 12, wherein the bonding step comprises the following steps: forming a dielectric layer over the integrated circuit layer of the first device; forming the at least one metal interconnect of the first device through said dielectric layer; forming a dielectric layer over the integrated circuit layer of the second device; forming the at least one metal interconnect of the second device through the dielectric layer of said second device; aligning said metal interconnects of said first and second devices, wherein said dielectric layer of said second device and said dielectric layer of said first device are directly bonded together along the interface therebetween to form at least a part of said non-metal-to-non-metal bond. 15. The method of claim 12, further comprising providing at least one additional device to said stack, wherein a topmost one of said at least one additional device is aligned with a top surface thereof facing said first device, said method further comprising the steps of: forming a dielectric layer over the integrated circuit layer of the at least one additional device; forming at least one metal interconnect through the dielectric layer, said integrated circuit layer and substrate of said at least one additional device; aligning said at least one metal interconnect of said at least one additional device with a metal interconnect of another device in the stack, wherein said metal interconnects of said devices are bonded together to form a metal-to-metal melt bond between said at least one additional device and said another device, and wherein said dielectric layer of said at least one additional device forms a part of a non-metal-to-non-metal bond with said another device along an interface therebetween. 16. The method of claim 12, wherein said metal-to-metal bond comprises a bond between an exposed copper portion from said first device and an exposed copper portion from said second device, said method further comprising the step of forming said exposed copper portions using a copper damascene method. 17. The method of claim 12, wherein said metal-to-metal bond is formed between exposed metal interconnects formed in said first and second devices, the method further comprising the step of forming an exposed metal interconnect in said second device by the steps comprising: etching an interconnect via through said integrated circuit layer of said second device and partially through said substrate of said second device; filling said interconnect via with a metal material; and thinning said substrate to expose said metal material. 18. The method of claim 12, wherein the non-metal-to-non-metal bond comprises at least one of a dielectric fusion bond between the devices and an adhesive bond between the devices. 19. The method of claim 12, further comprising the step of forming a dielectric layer over said integrated circuit layer of said first device, said dielectric layer forming a part of said non-metal-to-non-metal bond. 20. A three dimensional integrated circuit structure, comprising: at least first and second integrated circuit dies, each die comprising a substrate having an integrated circuit formed thereon, said first and second dies being bonded together along an interface between adjacent surfaces thereof to form a stack, each die comprising at least one metal interconnect formed at least partially through the die, wherein the at least one metal interconnect of at least one of said dies is exposed through said substrate of said at least one die, wherein the bond between the first and second dies comprises a metal-to-metal melt bond between said interconnects and a non-metal-to-non-metal bond along said interface, whereby substantially the entire interface between said first and second devices is bonded. 21. The integrated circuit structure of claim 20, wherein the non-metal-to-non-metal bond along said interface is a direct oxide fusion bond between surfaces of said dies. 22. The integrated circuit structure of claim 20, wherein the non-metal-to-non-metal bond along said interface is an adhesive bond between surfaces of said dies.