초록 ▼

When an aluminum plate is bonded directly to a ceramic substrate by cooling and solidifying molten aluminum which is injected into a mold so as to contact the ceramic substrate arranged in the mold, an additive, such as a TiB alloy, Ca or Sr, for decreasing the grain size of the aluminum plate to 10

When an aluminum plate is bonded directly to a ceramic substrate by cooling and solidifying molten aluminum which is injected into a mold so as to contact the ceramic substrate arranged in the mold, an additive, such as a TiB alloy, Ca or Sr, for decreasing the grain size of the aluminum plate to 10 mm or less while preventing the drop in thermal conductivity of the aluminum plate from the thermal conductivity of a pure aluminum plate from exceeding 20% of the thermal conductivity of the pure aluminum plate is added to the molten aluminum. When an aluminum alloy plate of an aluminum-silicon alloy is bonded directly to a ceramic substrate by cooling and solidifying a molten aluminum-silicon alloy which is injected into a mold so as to contact the ceramic substrate arranged in the mold, an aluminum-silicon alloy containing 0.1 to 1.5 wt % of silicon and 0.03 to 0.10 wt % of boron is injected into the mold.

대표청구항 ▼

What is claimed is: 1. An aluminum/ceramic bonding substrate comprising: a ceramic substrate; and an aluminum alloy member of an aluminum-silicon alloy which is bonded directly to said ceramic substrate by cooling a molten aluminum-silicon alloy containing boron while said molten aluminum-silicon a

What is claimed is: 1. An aluminum/ceramic bonding substrate comprising: a ceramic substrate; and an aluminum alloy member of an aluminum-silicon alloy which is bonded directly to said ceramic substrate by cooling a molten aluminum-silicon alloy containing boron while said molten aluminum-silicon alloy contacts said ceramic substrate, said aluminum-silicon alloy containing 0.1 to 1.5 wt % of silicon, and 0.02 wt % or more of boron as a third element for decreasing the grain size of the aluminum-silicon alloy to increase the number of grain boundary portions thereof. 2. An aluminum/ceramic bonding substrate as set forth in claim 1, wherein said aluminum-silicon alloy contains 0.2 to 1.0 wt % of silicon. 3. An aluminum/ceramic bonding substrate as set forth in claim 1, wherein said aluminum-silicon alloy contains 0.03 to 0.10 wt % of boron. 4. An aluminum/ceramic bonding substrate as set forth in claim 1, wherein all or part of a surface of said aluminum alloy member is plated with nickel or a nickel alloy. 5. A power module comprising an aluminum/ceramic bonding substrate as set forth in claim 1.