[특허]Methods of thinning a silicon wafer using HF and ozone

[미국특허] Methods of thinning a silicon wafer using HF and ozone 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	B08B-003/00 B08B-003/04
출원번호	US-0631376 (2003-07-30)
등록번호	US-7404863 (2008-07-29)
발명자 / 주소	Bergman,Eric J.
출원인 / 주소	Semitool, Inc.
대리인 / 주소	Ohriner,Kenneth H.
인용정보	피인용 횟수 : 5 인용 특허 : 63

초록 ▼

A method of thinning a silicon wafer in a controllable cost-effective manner with minimal chemical consumption. The wafer is placed into a process chamber, after which ozone gas and HF vapor are delivered into the process chamber to react with a silicon surface of the wafer. The ozone and HF vapor may be delivered sequentially, or may be mixed with one another before entering the process chamber. The ozone oxidizes the silicon surface of the wafer, while the HF vapor etches the oxidized silicon away from the wafer. The etched oxidized silicon is then removed from the process chamber. As a result, the wafer is thinned, which aids in preventing heat build-up in the wafer, and also makes the wafer easier to handle and cheaper to package. In alternative embodiments, HF may be delivered into the process chamber as an anhydrous gas or in aqueous form.

대표청구항 ▼

What is claimed is: 1. A method of thinning at least one silicon wafer, comprising: placing the wafer into a process chamber; spinning the wafer; spraying a liquid including water onto the spinning wafer, with the liquid forming a substantially uniform liquid layer on the wafer; controlling a thickness of the liquid layer; providing hydrofluoric acid in an aqueous form in the process chamber, with the hydrofluoric acid etching a silicon dioxide layer on a surface of the wafer; and providing ozone gas in the process chamber, with the ozone gas oxidizing a silicon surface of the wafer exposed by etching the silicon dioxide layer, and with the HF etching the oxidized silicon surface until the wafer is thinned to approximately 5 to 20% of its initial thickness. 2. The method of claim 1 with the HF etching the silicon at a rate over 1000 angstroms/minute. 3. The method of claim 2 with the HF etching the silicon at a rate of 5000-10000 angstroms/minute. 4. The method of claim 1 with the wafer thinned to a thickness of 50-100 microns. 5. The method of claim 1 further comprising continuously supplying fresh ozone gas into the process chamber to continually oxidize the exposed silicon surface. 6. The method of claim 1 wherein the oxidized silicon is removed as SiF4 in vapor form from the process chamber.

이 특허에 인용된 특허 (63) 인용/피인용 타임라인 분석

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[미국특허] Methods of thinning a silicon wafer using HF and ozone 원문보기

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연구과제 타임라인

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[미국특허] Methods of thinning a silicon wafer using HF and ozone 원문보기

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