초록 ▼

Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is called chemical-vapor deposition (CVD.) Conventional CVD systems not only form layers that have non-uniform

Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is called chemical-vapor deposition (CVD.) Conventional CVD systems not only form layers that have non-uniform thickness, but also have large chambers that make the CVD process wasteful and slow. Accordingly, the inventor devised new CVD systems, methods, and apparatuses. One exemplary CVD system includes an outer chamber, a substrate holder, and a unique gas-distribution fixture. The fixture includes a gas-distribution surface having holes for dispensing a gas and a gas-confinement member that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber. The inner chamber has a smaller volume than the outer chamber, which not only facilitates depositions of more uniform thickness, but also saves gas and speeds up the deposition process.

대표청구항 ▼

The invention claimed is: 1. A method comprising: introducing gas into a closed inner chamber within an outer chamber through a gas-distribution fixture in a chemical-vapor-deposition system, with the fixture for distributing gas over a substrate; operating a pump to evacuate gas from the outer cha

The invention claimed is: 1. A method comprising: introducing gas into a closed inner chamber within an outer chamber through a gas-distribution fixture in a chemical-vapor-deposition system, with the fixture for distributing gas over a substrate; operating a pump to evacuate gas from the outer chamber through the gas-distribution fixture, wherein evacuating gas occurs after introducing gas; and changing relative position of the gas-distribution fixture and a substrate to form the closed inner chamber from the gas distribution fixture and a substrate holder before introducing gas, wherein the gas-distribution fixture includes a gas-distribution surface having a plurality of holes and a gas-confinement member extending from the gas-distribution surface around the plurality of holes; and wherein changing relative position of the fixture and the substrate includes moving the fixture from at least a first operating position where the gas-confinement member is physically apart from the substrate holder to a second operating position where the gas-confinement member is in physical contact with the substrate holder. 2. The method of claim 1, wherein operating a pump to evacuate gas from the chamber through the gas-distribution fixture after introducing gas includes operating a pump to evacuate gas from the inner chamber. 3. The method of claim 1, wherein changing relative position of the gas-distribution fixture and a substrate to form a closed inner chamber includes forming a closed chamber having an empty volume in the range of 70 to 350 cubic centimeters. 4. The method of claim 3, wherein the outer chamber has a volume greater than the closed inner chamber. 5. The method of claim 1, wherein changing relative position of the gas-distribution fixture and a substrate to form a closed inner chamber includes moving the gas-distribution surface of the gas-distribution fixture to within one to five millimeters of the substrate. 6. A method comprising: loading at least one substrate into a first chamber of a chemical-vapor-deposition system; heating the one substrate to a desired temperature; reducing pressure in the first chamber; forming a closed second chamber around the substrate, wherein forming the closed second chamber around the one substrate comprises reducing a distance between the gas-distribution fixture and the substrate to form the closed second chamber from the gas-distribution fixture and a substrate-support surface; introducing one or more gases through a gas-distribution fixture into the second chamber to deposit a layer of material on the one substrate; evacuating gas from the second chamber; opening the second chamber; unloading the one substrate from the first chamber; wherein the gas-distribution fixture includes a gas-distribution surface having a plurality of holes and a gas-confinement member extending from the gas-distribution surface around the plurality of holes; and wherein reducing the distance between the gas-distribution fixture and the substrate comprising moving the gas-confinement member toward the substrate-support surface that is supporting the substrate, such that the gas-confinement member contacts the substrate-support surface. 7. The method of claim 6, wherein the gas-confinement member consists essentially of a material different from that of the gas-distribution surface. 8. The method of claim 6, wherein reducing pressure in the first chamber comprises using a first pump and evacuating gas from the second chamber comprises using a second pump to pump gas through the gas-distribution fixture. 9. The method of claim 6, wherein evacuating gas from the second chamber includes reducing pressure includes operating a same pump that reduces pressure in the first chamber. 10. The method of claim 6, wherein forming a closed second chamber includes enclosing an empty volume in the range of 70 to 350 cubic centimeters adjacent a substrate. 11. The method of claim 6, wherein the outer chamber has a volume greater than the closed inner chamber. 12. A method comprising: introducing gas into the chamber through a gas-distribution fixture in a chemical-vapor-deposition system, with the fixture for distributing gas over a substrate and including: a gas-distribution member comprising: a first plate having one or more gas-distribution channels, a second plate adjacent the first plate and having a plurality of holes that define a gas-distribution surface, and a gas-confinement member extending from the gas-distribution surface around the plurality of holes; evacuating gas from the chamber through the gas-distribution fixture; and changing a relative position of the gas-distribution fixture and a substrate before introducing the gas; wherein changing relative position of the fixture and the substrate comprising moving the fixture from at least a first operating position apart from a substrate support surface to a second operating position in contact with a substrate-support surface to define a closed first chamber formed by the gas-distribution fixture and the substrate support surface within the chamber. 13. The method of claim 12, wherein evacuating gas occurs after introducing gas. 14. The method of claim 12, wherein evacuating gas from the chamber comprises operating a pump coupled to the gas-distribution fixture. 15. A method comprising: loading at least one substrate into a first chamber of a chemical-vapor-deposition system; heating the one substrate to a desired temperature; reducing pressure in the first chamber; forming a closed second chamber around the one substrate; introducing one or more gases through a gas-distribution fixture into the second chamber to deposit a layer of material on the one substrate, the fixture including: a gas-distribution member comprising: a first plate having one or more gas-distribution channels; a second plate adjacent the first plate and having a plurality of holes that define a gas-distribution surface; and a gas-confinement surface extending from the gas-distribution surface around the plurality of holes, wherein forming the closed second chamber around the one substrate comprises moving the gas-distribution fixture from at least a first operating position to a second operating position with the second operating position placing the gas-confinement surface in contact with a substrate-support surface to define the closed second chamber; evacuating gas from the second chamber; opening the second chamber; and unloading the one substrate from the first chamber. 16. The method of claim 15, wherein the gas-confinement surface is spaced from an interior sidewall of the first chamber, nonparallel to the gas-distribution surface, and movable in unison with the gas-distribution member from the first to the second operating position. 17. The method of claim 15, wherein reducing pressure in the first chamber comprises using a first pump and evacuating gas from the second chamber comprises using a second pump to pump gas through the gas-distribution fixture. 18. A method comprising: loading at least one substrate into a first chamber of a chemical-vapor-deposition system; heating the one substrate to a desired temperature; reducing pressure in the first chamber using a first pump; forming a closed second chamber around the one substrate; introducing one or more gases through a gas-distribution fixture into the second chamber to deposit a layer of material on the one substrate, the fixture including: a gas-distribution member comprising: a first silicon plate having one or more gas-distribution channels; a second silicon plate adjacent the first plate and having a plurality of holes that define a gas-distribution surface; a bond between the first and second silicon plates; and a gas-confinement surface extending from the gas-distribution surface around the plurality of holes; wherein forming the closed second chamber around the one substrate comprises moving the gas-distribution fixture from at least a first operating position to a second operating position with the second operating position placing the gas-confinement surface in contact with a substrate-support surface to form the closed second chamber from the gas-distribution fixture and the substrate-support surface; evacuating gas from the second chamber using a second pump to pump gas through the gas-distribution fixture; opening the second chamber; and unloading the one substrate from the second chamber. 19. The method of claim 18, wherein the second chamber is sized to contain a wafer having a 300-millimeter width or diameter. 20. The method of claim 18, wherein the second chamber is sized to contain a wafer having a 300-millimeter width or diameter and to define a volume in the range of 70-350 cubic centimeters. 21. The method of claim 18, wherein the second operating position is for placing the gas-distribution surface in the range of 1-5 millimeters from an uppermost surface of a wafer on the wafer-support surface. 22. The method of claim 18 wherein the first pump has a greater capacity than the second pump.