초록 ▼

A polyamide acid solution and/or gel film is subjected to at least any one of the following processes: addition of a semiconducting inorganic filler, addition of a conductivity imparting agent, and formation of a conductive film. Thereafter, the polyamide acid contained in the polyamide acid solutio

A polyamide acid solution and/or gel film is subjected to at least any one of the following processes: addition of a semiconducting inorganic filler, addition of a conductivity imparting agent, and formation of a conductive film. Thereafter, the polyamide acid contained in the polyamide acid solution or gel film is imidized. Thus, the obtained semiconducting polyimide film has surface and volume resistances satisfactorily controllable and less dependent on voltage, excellent mechanical properties, and a high elongation rate.

대표청구항 ▼

What is claimed is: 1. A method of manufacturing a semiconducting polyimide film, comprising: a conductivity imparting step of adding a semiconducting inorganic filler to a polyamide acid solution which is a solution of an organic solvent containing polyamide acid; a gel film mold step of, followin

What is claimed is: 1. A method of manufacturing a semiconducting polyimide film, comprising: a conductivity imparting step of adding a semiconducting inorganic filler to a polyamide acid solution which is a solution of an organic solvent containing polyamide acid; a gel film mold step of, following the conductivity imparting step, partially hardening and/or partially drying the polyamide acid to mold a gel film; and a post-conductivity-imparting imidization step of imidizing the polyamide acid contained in the gel film, wherein the semiconducting inorganic filler has a volume resistivity (powder resistance) of 105 to 109 Ωcm, and the semiconducting inorganic filler is acicular and a shorter axis of the semiconducting inorganic filler falls within a range between 0.01 μm and 1 μm, while a longer axis of the semiconducting inorganic filler falls within a range between 1 μm and 20 μm, and the polyamide acid is made of at least one kind of diamine selected from 4,4' diaminodiphenylpropane, 4,4'-diaminodiphenylmethane, benzidine, 3,3'-dichorobenzidine, 4,4'-diaminodiphenylsulfide, 3,3'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylether, 3,3'-diaminodiphenylether, 3,4'-diaminodiphenylether, 1,5-diaminonaphthalene, 4,4'-diaminodiphenyldiethylsilane, 4,4'-diaminodiphenylsilane, 4,4'-diaminodiphenylethyl phosphine oxide, 4,4'-diaminodiphenyl N-methylamine, 4,4'-diaminodiphenyl N-phenylamine, 1,4-diaminobenzene(p-phenylene diamine), and 1,2-diaminobenzene, and the imidization is performed at a heat treatment temperature range of 450�� C. to 550�� C. in the post-conductivity-imparting imidization step. 2. The method as set forth in claim 1, comprising the steps of: preparing the polyamide acid solution containing the semiconducting inorganic filler by polymerization in a slurry in which the semiconducting inorganic filler is uniformly dispersed, so that the semiconducting inorganic filler makes up of 15 wt % to 50 wt % of the semiconducting polyimide film as a final product; and forming a film by flow-casting a film-forming solution containing the polyamide acid solution on a support body. 3. The method as set forth in claim 1, comprising the steps of: mixing the polyamide acid solution and a slurry in which the semiconducting inorganic filler is uniformly dispersed, so that the semiconducting inorganic filler makes up of 15 wt % to 50 wt % of the semiconducting polyimide film as a final product; and forming a film by flow-casting a liquid mixture prepared in step 1 on a support body. 4. The method as set forth in claim 1, wherein the semiconducting inorganic filler is titanium oxide whiskers. 5. The method as set forth in claim 2, wherein the diamine is at least one kind selected from 4,4'-diaminodiphenylether and p-phenylene diamine. 6. The method as set forth in claim 1, wherein the polyamide acid is made of at least one kind of aromatic dianhydride selected from pyromellitic dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 3,3',4,4'-biphenyl tetracarboxylic dianhydride, 1,2,5,6-naphthalene tetracarboxylic dianhydride, 2,2',3,3'-biphenyl tetracarboxylic dianhydride, 3,3'4,4'-benzophenone tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl)proane dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)ethane dianhydride, oxydiphthalic dianhydride, bis(3,4-dicarboxyphenyl)sulfone dianhydride, p-phenylene bis(trimellitic monoesteric anhydride), ethylene bis(trimellitic monoesteric anhydride), and bisphenol A bis(trimellitic monoesteric anhydride). 7. The method as set forth in claim 6, wherein the aromatic dianhydride is at least one kind selected from pyromellitic dianhydride, 3,3',4,4'-benzophenone tetracarboxylic dianhydride, 3,3'4,4'-biphenyl tetracarboxylic dianhydride, and p-phenylene bis(trimellitic monoesteric anhydride).