Ion implanted microscale and nanoscale device method
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/31
H01L-021/02
출원번호
US-0504466
(2006-08-15)
등록번호
US-7419917
(2008-09-02)
발명자
/ 주소
Abraham,Margaret H.
출원인 / 주소
The Aerospace Corporation
대리인 / 주소
Reid,Derrick Michael
인용정보
피인용 횟수 :
7인용 특허 :
4
초록▼
A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrat
A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing to form a stoichiometric film with the device geometry is defined by the implant energy and dose and so is not limited by the usual process parameters.
대표청구항▼
The invention claimed is: 1. A method for implanting a buried patterned film in a bulk material, the method comprising the steps of, generating an ion beam of ions, implanting the ion of the ion beam in a buried volume in the bulk material as buried ions, the buried ions forming a buried pattern of
The invention claimed is: 1. A method for implanting a buried patterned film in a bulk material, the method comprising the steps of, generating an ion beam of ions, implanting the ion of the ion beam in a buried volume in the bulk material as buried ions, the buried ions forming a buried pattern of ions, annealing the bulk material for forming the buried patterned film from the buried pattern of ions, the buried pattern film being a chemical compound of the ions and the bulk material, and etching the bulk material about the buried patterned film for releashing the buried patterned film from the bulk material. 2. The method of claim 1 wherein, the ions are O+ ions, the bulk material is bulk silicon, and the buried patterned film is silicon dioxide. 3. The method of claim 1 wherein, the ions are C+ ions, the bulk material is bulk silicon, and the buried patterned film is silicon carbide. 4. The method of claim 1 wherein, the ions are metal ions, the bulk material is bulk silicon, and the buried patterned film is metal silicide. 5. The method of claim 1 wherein, the ions are Nitrogen ions, the bulk material is bulk silicon, and the buried patterned film is silicon nitride. 6. The method of claim 1 wherein, the etching of the bulk material about the buried patterned film is for creating a cavity in the bulk material about the buried patterned film for releasing the buried patterned film from the bulk material, and the method further comprises the step of , depositing a film within the cavity. 7. The method of claim 1 wherein, the etching of the bulk material about the buried patterned film for creating a cavity in the bulk material about the buried patterned film for releasing the buried patterned film from the bulk material, and the method further comprises the step of, depositing a metal film within the cavity by laser-assisted chemical deposition. 8. The method of claim 1 wherein, the etching of the bulk material about the buried patterned film is for creating a cavity in the bulk material about the buried patterned film for releasing the buried patterned film from the bulk material, and the method further comprises the steps of, generating a laser beam, and depositing a metal film within the cavity by laser-assisted chemical deposition, the laser beam transmitted through the buried film for depositing the metal film under the buried film and on the cavity. 9. The method of claim 1 wherein, the implanting is a masked implanting step where the ion beam passes through a mask. 10. The method of claim 1 wherein, the implanting is a focused ion beam implanting step where the ion beam is focused to implant the ions in a pattern for forming the patterned film.
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이 특허에 인용된 특허 (4)
Maurice H. Norcott ; Devendra K. Sadana, Control of buried oxide quality in low dose SIMOX.
Presser, Nathan; Taylor, David P., Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates.
Abraham, Margaret H.; Taylor, David P., Systems and methods for depositing materials on either side of a freestanding film using laser-assisted chemical vapor deposition (LA-CVD), and structures formed using same.
Taylor, David P.; Abraham, Margaret H., Systems and methods for depositing materials on either side of a freestanding film using selective thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same.
Abraham, Margaret H.; Taylor, David P., Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same.
Abraham, Margaret H.; Taylor, David P., Systems and methods for preparing freestanding films using laser-assisted chemical etch, and freestanding films formed using same.
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