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Method and apparatus for providing a determined ratio of process fluids 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G05D-007/06
출원번호 US-0504175 (2006-08-15)
등록번호 US-7424894 (2008-09-16)
발명자 / 주소
  • Lull,John M.
  • Valentine,William S.
출원인 / 주소
  • Celerity, Inc.
대리인 / 주소
    Lowrie, Lando & Anastasi, LLP
인용정보 피인용 횟수 : 10  인용 특허 : 55

초록

A fluid flow control system that includes a fluid inlet to receive a flow of process fluid and a plurality of fluid outlets. The plurality of fluid outlets include a first fluid outlet and at least one second fluid outlet. The first fluid outlet provides a first predetermined portion of the flow of

대표청구항

What is claimed is: 1. A fluid flow control system, comprising: a fluid inlet to receive a flow of process fluid; a first fluid outlet to provide a first predetermined portion of the flow of process fluid received at the fluid inlet; a second fluid outlet to provide a remaining portion of the flow

이 특허에 인용된 특허 (55)

  1. Long Paul D. (Meridian ID) Guerricabeitia Jose J. (Boise ID), Anisotropic etch method for a sandwich structure.
  2. Kitayama Hirofumi,JPX ; Kurono Yoichi ; Ikeda Nobukazu,JPX ; Masuda Naoya,JPX, Apparatus for feeding gases for use in semiconductor manufacturing.
  3. Carpenter, Kent; Dietz, James, Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels.
  4. Kuramoto Hiroaki,JPX, Controller and control method of electric pump feedback controlled as a function of drain flow rate for a continuously variable transmission.
  5. Li Shijian ; Redeker Fred C. ; Ishikawa Tetsuya, Deposition chamber for improved deposition thickness uniformity.
  6. Gupta Anand ; Shahreza Majid K., Discharging a wafer after a plasma process for dielectric deposition.
  7. Shan Hongching (San Jose CA) Herchen Harald (Fremont CA) Welch Michael (Pleasanton CA), Distributed microwave plasma reactor for semiconductor processing.
  8. Roithner Klaus ; Poschenrieder Bernhard,FRX ; Muller Karl Paul, Distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops.
  9. Botelho Alexandre de Almeida ; Del Prato Thomas Anthony ; Ford Robert William, Dynamic blending gas delivery system and method.
  10. Wilmer Michael E., Dynamic gas flow controller.
  11. Mack Michael E. (Manchester MA), Fluid flow control method and apparatus for minimizing particle contamination.
  12. Mack Michael E. (Manchester MA), Fluid flow control method and apparatus for minimizing particle contamination.
  13. Goldman Jon C. (Orange CA) Rappaport Robert E. (Westminster CA), Gas control system for chemical vapor deposition system.
  14. Fairbairn Kevin ; Ponnekanti Hari K. ; Cheung David, Gas delivery system.
  15. McMillin Brian K. ; Knop Robert, Gas distribution apparatus for semiconductor processing.
  16. McMillin, Brian K.; Knop, Robert, Gas distribution apparatus for semiconductor processing.
  17. Larson,Dean J.; Kadkhodayan,Babak; Wu,Di; Takeshita,Kenji; Yen,Bi Ming; Su,Xingcai; Denty, Jr.,William M.; Loewenhardt,Peter, Gas distribution system with tuning gas.
  18. Shan, Hongqing, Gas flow division in a wafer processing system having multiple chambers.
  19. McMillin Brian ; Nguyen Huong ; Barnes Michael ; Ni Tom, Gas injection system for plasma processing.
  20. Anderson Roger N. ; Hey Peter W. ; Carlson David K. ; Venkatesan Mahalingam ; Riley Norma, Gas inlets for wafer processing chamber.
  21. Yamagishi, Takayuki; Suwada, Masaei, Gas-line system for semiconductor-manufacturing apparatus.
  22. Fairbairn Kevin (Saratoga CA) Nowak Romuald (Cupertino CA), High density plasma CVD and etching reactor.
  23. Shealy J. Richard, High throughput OMVPE apparatus.
  24. Anderson Richard L. (Austin TX), Intelligent mass flow controller.
  25. Takamoto Masaki,JPX ; Nakao Shinichi,JPX ; Ishibashi Masahiro,JPX ; Ina Yoshitaka,JPX ; Yokoi Yoshikazu,JPX ; Hayakawa Masao,JPX, Mass flow control method and device utilizing a sonic nozzle.
  26. Ambrosina, Jesse; Kottenstette, Nicholas E.; Shajii, Ali, Mass flow ratio system and method.
  27. Marrelli John D. (Houston TX), Means for separating a fluid stream into two separate streams.
  28. Stoy James R. (Missouri City TX) Schrodt James L. G. (Houston TX) Wheeler Stephen S. (Bakersfield CA), Method and apparatus for automatically transferring and measuring wet steam between priority and secondary users.
  29. Singh Vikram ; McMillin Brian ; Ni Tom ; Barnes Michael ; Yang Richard, Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing.
  30. Hong Soonil ; Ryu Choon Kun ; Nault Michael P. ; Singh Kaushal K. ; Lam Anthony ; Rana Virendra V. S. ; Conners Andrew, Method and apparatus for improving gap-fill capability using chemical and physical etchbacks.
  31. Krogh Ole (San Francisco CA), Method and apparatus for low pressure plasma.
  32. Lull, John M.; Valentine, William S., Method and apparatus for providing a determined ratio of process fluids.
  33. Lull, John M.; Valentine, William S., Method and apparatus for providing a determined ratio of process fluids.
  34. Muller-Kuhrt, Lutz; God, Ralf; Gumm, Holger; Binkele, Jorg, Method and device for regulating individual sub-flows of a system for conveying fluid media.
  35. Hirofumi Kitayama JP; Yoichi Kurono ; Nobukazu Ikeda JP; Naoya Masuda JP, Method for feeding gases for use in semiconductor manufacturing.
  36. Kao Chien-Teh ; Littau Karl Anthony ; Vasudev Anand ; Koo Dong Won, Method for improved cleaning of substrate processing systems.
  37. Schliefer Heinrich (Hamburg DT) Warnecke Friedrich Wilhelm (Hamburg DT), Method of independently adjusting the fuel mixture composition and melting rate of multiburner shaft furnaces for meltin.
  38. Zhao Bin, Method of making a damascene metallization.
  39. Hasegawa Makoto (Kawasaki JPX) Sanda Atsuo (Yokohama JPX), Method of performing plain etching treatment and apparatus therefor.
  40. Caughran James W. (Lodi CA), Modular gas box system.
  41. Goto Yasuo (Saitama JPX), Nitrogen oxide removal control apparatus.
  42. Tadahiro Ohmi JP; Satoshi Kagatsume JP; Kazuhiko Sugiyama JP; Yukio Minami JP; Kouji Nishino JP; Ryousuke Dohi JP; Katsunori Yonehana JP; Nobukazu Ikeda JP; Michio Yamaji JP; Jun Hirose JP;, Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow control method and fluid-switchable pressure-type flow control system for the same fluid supply apparatus.
  43. Koshimizu Chishio,JPX, Plasma processing apparatus.
  44. Suzuki Akira (Nirasaki JPX) Ishizuka Shuichi (Nirasaki JPX) Kawamura Kohei (Yamanashi JPX) Hata Jiro (Yamanashi JPX), Plasma processing apparatus using vertical gas inlets one on top of another.
  45. Hanazaki Minoru,JPX ; Ikushima Takayuki,JPX ; Shirakawa Kenji,JPX ; Yamaguchi Shinji,JPX ; Taki Masakazu,JPX, Plasma processing method and plasma processing apparatus.
  46. Grosshart, Paul Francis, Pressure-based mass flow controller system.
  47. Herter ; deceased Martin (Romerfeldstr. 9 late of Pulheim-Geyen DEX) Herter ; heiress by Johanna (Romerfeldstr. 9 5024 Pulheim-Geyen DEX) Radtke ; heir by Ingrid (Schlehenweg 4 4047 Dormagen 1 (Delho, Process and device for the mixing of gases.
  48. Tokuda Mitsuo (Tachikawa JPX) Azuma Junzou (Yokohama JPX) Otsubo Toru (Fujisawa JPX) Yamaguchi Yasuhiro (Chigasaki JPX) Sasaki Ichirou (Yokohama JPX), Processing apparatus and method for plasma processing.
  49. Moslehi Mehrdad M. (Dallas TX) Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX), Programmable multizone gas injector for single-wafer semiconductor processing equipment.
  50. Telford Susan G.,DEX ; Tseng Meng Chu ; Aruga Michio,JPX ; Rinnen Klaus-Dieter, Substrate having uniform tungsten silicide film and method of manufacture.
  51. Matthew Thomas Taylor ; John Christopher Hallahan ; William R. Clark, System and method for dividing flow.
  52. Kenneth E. Tinsley ; Faisal Tariq, System and method of operation of a digital mass flow controller.
  53. Bergamini Lorenzo,ITX, System for measuring and controlling gas mass flow.
  54. Shrotriya Ashish V., Two step process for cleaning a substrate processing chamber.
  55. Matsuse Kimihiro,JPX ; Lee Hideki,JPX ; Osada Hatsuo,JPX ; Tanaka Sumi,JPX, Vacuum processing apparatus.

이 특허를 인용한 특허 (10)

  1. Cobb, Corie Lynn; Xu, Ming, Apparatus for controlling gas distribution using orifice ratio conductance control.
  2. Womack, Jeffrey; Lau, Stephen, Flow balancing in gas distribution networks.
  3. Womack, Jeffrey; Lau, Stephen, Flow balancing in gas distribution networks.
  4. Okabe, Tsuneyuki, Gas supply apparatus for semiconductor manufacturing apparatus.
  5. Yamaguchi, Yuji; Yasuda, Tadahiro, Gas supply system.
  6. Shareef, Iqbal; Taskar, Mark; Zemlock, Tony, Gas transport delay resolution for short etch recipes.
  7. Ding, Junhua, Method of and apparatus for multiple channel flow ratio controller system.
  8. Kobayashi, Hiroyuki; Maeda, Kenji; Yokogawa, Kenetsu; Izawa, Masaru; Kanekiyo, Tadamitsu, Plasma processing apparatus.
  9. Kobayashi, Hiroyuki; Maeda, Kenji; Yokogawa, Kenetsu; Izawa, Masaru; Kanekiyo, Tadamitsu, Plasma processing apparatus.
  10. Tanaka, Hideki; Saito, Susumu, Substrate processing apparatus and analysis method therefor.
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